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8 条记录 (耗时 0.018 秒)

    UNIFORM DRY ETCH IN TWO STAGES
    1.
    发明申请
    UNIFORM DRY ETCH IN TWO STAGES 有权
    两阶段均匀干燥

    公开(公告)号：US20120196447A1

    公开(公告)日：2012-08-02

    申请号：US13197487

    申请日：2011-08-03

    申请人： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

    发明人： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/31116

    摘要： A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.

    摘要翻译： 描述了从多个沟槽蚀刻氧化硅的方法，其允许沟槽之间更均匀的蚀刻速率。 蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更平滑。 该方法包括两个干蚀刻阶段，接着是升华步骤。 第一干蚀刻阶段快速去除氧化硅并产生大的固体残渣颗粒。 第二干蚀刻步骤缓慢除去氧化硅，并在大的固体残渣颗粒中产生小的固体残渣颗粒。 在随后的升华步骤中，小和大的固体残余物都被去除。 两个干蚀刻阶段之间没有升华步骤。

    SMOOTH SICONI ETCH FOR SILICON-CONTAINING FILMS
    2.
    发明申请
    SMOOTH SICONI ETCH FOR SILICON-CONTAINING FILMS 有权
    用于含硅片的SMOOTH SICONI蚀刻

    公开(公告)号：US20110151674A1

    公开(公告)日：2011-06-23

    申请号：US12646030

    申请日：2009-12-23

    申请人： JING TANG ,  Nitin Ingle ,  Dongqing Yang

    发明人： JING TANG ,  Nitin Ingle ,  Dongqing Yang

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01J2237/3341

    摘要： A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.

    摘要翻译： 描述了蚀刻含硅材料的方法，并且包括与现有技术中发现的氢相比具有比氟更大或更小的氢流量比的SiConi TM蚀刻。 已经发现以这种方式修改流速比降低了蚀刻后表面的粗糙度并且减少了密集和稀疏图案化区域之间的蚀刻速率差异。 降低蚀刻后表面粗糙度的替代方法包括脉冲前体和/或等离子体功率的流动，保持相对高的衬底温度并在多个步骤中执行SiConi TM。 单独或组合的这些方法中的每一种用于通过限制固体残留物颗粒尺寸来减少蚀刻表面的粗糙度。

    Uniform dry etch in two stages
    3.
    发明授权
    Uniform dry etch in two stages 有权
    两步均匀干蚀刻

    公开(公告)号：US08741778B2

    公开(公告)日：2014-06-03

    申请号：US13197487

    申请日：2011-08-03

    申请人： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

    发明人： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31116

    摘要： A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.

    摘要翻译： 描述了从多个沟槽蚀刻氧化硅的方法，其允许沟槽之间更均匀的蚀刻速率。 蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更平滑。 该方法包括两个干蚀刻阶段，接着是升华步骤。 第一干蚀刻阶段快速去除氧化硅并产生大的固体残渣颗粒。 第二干蚀刻步骤缓慢除去氧化硅，并在大的固体残渣颗粒中产生小的固体残渣颗粒。 在随后的升华步骤中，小和大的固体残余物都被去除。 两个干蚀刻阶段之间没有升华步骤。

    Smooth SiConi etch for silicon-containing films
    6.
    发明授权
    Smooth SiConi etch for silicon-containing films 有权
    对含硅膜进行平滑SiConi蚀刻

    公开(公告)号：US08501629B2

    公开(公告)日：2013-08-06

    申请号：US12646030

    申请日：2009-12-23

    申请人： Jing Tang ,  Nitin Ingle ,  Dongqing Yang

    发明人： Jing Tang ,  Nitin Ingle ,  Dongqing Yang

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01J2237/3341

    摘要： A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.

    摘要翻译： 描述了一种蚀刻含硅材料的方法，并且包括与现有技术中发现的氢相比具有比氟更大或更小的氢流量比的SiConi TM蚀刻。 已经发现以这种方式修改流速比降低了蚀刻后表面的粗糙度并且减少了密集和稀疏图案化区域之间的蚀刻速率差异。 降低蚀刻后表面粗糙度的替代方法包括脉冲前体和/或等离子体功率的流动，维持相对高的衬底温度并以多个步骤执行SiConi TM。 单独或组合的这些方法中的每一种用于通过限制固体残留物颗粒尺寸来减少蚀刻表面的粗糙度。

    Invertable pattern loading with dry etch
    7.
    发明授权
    Invertable pattern loading with dry etch 有权
    用干蚀刻反转图案加载

    公开(公告)号：US08435902B2

    公开(公告)日：2013-05-07

    申请号：US12959155

    申请日：2010-12-02

    申请人： Jing Tang ,  Nitin Ingle ,  Dongqing Yang ,  Shankar Venkataraman

    发明人： Jing Tang ,  Nitin Ingle ,  Dongqing Yang ,  Shankar Venkataraman

    IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  C23F3/00

    CPC分类号： H01L21/31116 ,  H01J37/32091

    摘要： A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.

    摘要翻译： 描述了从窄沟槽和宽沟槽（或开放区域）中蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻进一步进行。 该方法包括两个干蚀刻循环。 第一干蚀刻循环涉及低强度或缩写升华步骤，其在窄沟槽中留下固体残留物。 剩余的固体残余物在第二干蚀刻循环期间抑制窄沟槽中的蚀刻进程，允许宽沟槽中的蚀刻超过窄沟槽中的蚀刻。

    INVERTABLE PATTERN LOADING WITH DRY ETCH
    8.
    发明申请
    INVERTABLE PATTERN LOADING WITH DRY ETCH 有权
    不可逆图案加载干燥蚀刻

    公开(公告)号：US20110230052A1

    公开(公告)日：2011-09-22

    申请号：US12959155

    申请日：2010-12-02

    申请人： Jing Tang ,  Nitin Ingle ,  Dongqing Yang ,  Shankar Venkataraman

    发明人： Jing Tang ,  Nitin Ingle ,  Dongqing Yang ,  Shankar Venkataraman

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/31116 ,  H01J37/32091

    摘要： A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.

    摘要翻译： 描述了从窄沟槽和宽沟槽（或开放区域）中蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻进一步进行。 该方法包括两个干蚀刻循环。 第一干蚀刻循环涉及低强度或缩写升华步骤，其在窄沟槽中留下固体残留物。 剩余的固体残余物在第二干蚀刻循环期间抑制窄沟槽中的蚀刻进程，允许宽沟槽中的蚀刻超过窄沟槽中的蚀刻。