公开(公告)号：US09412728B2

公开(公告)日：2016-08-09

申请号：US14418842

申请日：2013-07-19

申请人： ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

发明人： Carlotta Guiducci ,  Yusuf Leblebici ,  Yuksel Temiz

IPC分类号： H01L21/00 ,  H01L25/00 ,  H01L21/768 ,  H01L23/00 ,  G03F7/20 ,  G03F7/32

CPC分类号： H01L25/50 ,  G03F7/2022 ,  G03F7/32 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3185 ,  H01L24/02 ,  H01L24/05 ,  H01L24/24 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L2221/68381 ,  H01L2224/02313 ,  H01L2224/0239 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24146 ,  H01L2224/27002 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2224/82002 ,  H01L2224/82005 ,  H01L2224/8201 ,  H01L2224/82101 ,  H01L2224/82106 ,  H01L2224/82143 ,  H01L2224/83143 ,  H01L2224/83203 ,  H01L2224/8385 ,  H01L2224/9202 ,  H01L2224/9205 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/00013 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A method for performing a post processing pattern on a diced chip having a footprint, comprises the steps of providing a support wafer; applying a first dry film photoresist to the support wafer; positioning a mask corresponding to the footprint of the diced chip on the first dry film photoresist; expose the mask and the first dry film photoresist to UV radiation; remove the mask; photoresist develop the exposed first dry film photoresist to obtain a cavity corresponding to the diced chip; positioning the diced chip inside the cavity; applying a second dry film photoresist to the first film photoresist and the diced chip; and expose and develop the second dry film photoresist applied to the diced chip in accordance with the post processing pattern.

摘要翻译： 一种用于在具有覆盖区的切割芯片上执行后处理图案的方法，包括以下步骤：提供支撑晶片; 将第一干膜光致抗蚀剂施加到所述支撑晶片; 将对应于切割的芯片的覆盖区的掩模定位在第一干膜光致抗蚀剂上; 将掩模和第一干膜光致抗蚀剂暴露于UV辐射; 取下面具; 光致抗蚀剂显影曝光的第一干膜光致抗蚀剂以获得与切割芯片相对应的空腔; 将切割的芯片定位在腔内; 将第二干膜光致抗蚀剂施加到第一膜光致抗蚀剂和切割的芯片上; 并且根据后处理图案曝光和显影施加到切割的芯片上的第二干膜光致抗蚀剂。