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41 条记录 (耗时 0.021 秒)

    COLOR CHANGEABLE DEVICE
    3.
    发明申请
    COLOR CHANGEABLE DEVICE 有权
    彩色可变装置

    公开(公告)号：US20160246151A1

    公开(公告)日：2016-08-25

    申请号：US15007844

    申请日：2016-01-27

    申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    发明人： Ji-Young OH ,  Jae Bon KOO ,  Joo Yeon KIM ,  Bock Soon NA ,  Chan Woo PARK ,  Sang Seok LEE ,  Soon-Won JUNG ,  Seong-Mok CHO ,  Hye Yong CHU

    IPC分类号： G02F1/155

    CPC分类号： G02F1/155 ,  G02F2001/1519

    摘要： Provided is a color changeable device which includes a first substrate and a second substrate that are spaced apart from each other, a first transparent electrode disposed on the first substrate, a second transparent electrode disposed on the second substrate, an electrochromic layer disposed between the first transparent electrode and the second transparent electrode, an organic layer disposed between the first transparent electrode and the electrochromic layer. The organic layer may include a hole injection layer or an electron injection layer. The organic layer may further include a hole transport layer or an electron transport layer.

    摘要翻译： 提供了一种可变色装置，其包括彼此间隔开的第一基板和第二基板，设置在第一基板上的第一透明电极，设置在第二基板上的第二透明电极，设置在第一基板之间的电致变色层 透明电极和第二透明电极，设置在第一透明电极和电致变色层之间的有机层。 有机层可以包括空穴注入层或电子注入层。 有机层还可以包括空穴传输层或电子传输层。

    DISPLAY DEVICE
    6.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号：US20140333977A1

    公开(公告)日：2014-11-13

    申请号：US14212162

    申请日：2014-03-14

    申请人： Electronics and Telecommunications Research Institute

    发明人： Chi-Sun HWANG ,  Hye Yong CHU ,  Jong Sool JEONG

    IPC分类号： G03H1/22

    CPC分类号： G03H1/2294 ,  B82Y20/00 ,  G03H1/2286 ,  G03H2222/12 ,  G03H2222/34 ,  Y10S977/774 ,  Y10S977/95

    摘要： Provided is a display device. The display device includes a backlight unit generating a plurality of flat lights and a spatial light modulator (SLM) unit generating an interference pattern by using the plurality of lights according to hologram data and displaying a hologram based on the generated interference pattern. The backlight unit is manufactured as an organic light emitting diode including a plurality of quantum dots.

    摘要翻译： 提供了一种显示装置。 显示装置包括产生多个平面光的背光单元和通过使用根据全息图数据的多个光产生干涉​​图案的空间光调制器（SLM）单元，并且基于所生成的干涉图案显示全息图。 背光单元被制造为包括多个量子点的有机发光二极管。

    HYBRID LIGHT EMITTING DEVICE
    7.
    发明申请
    HYBRID LIGHT EMITTING DEVICE 有权
    混合发光装置

    公开(公告)号：US20140077170A1

    公开(公告)日：2014-03-20

    申请号：US13782183

    申请日：2013-03-01

    申请人： Electronics and Telecommunications Research Institute

    发明人： Jun-Han HAN ,  Jeong Ik LEE ,  Chul Woong JOO ,  Jin Woo HUH ,  Jaehyun MOON ,  Seung Koo PARK ,  Joon Tae AHN ,  Bong Joon LEE ,  Nam Sung CHO ,  Doo-Hee CHO ,  Joo Hyun HWANG ,  Jin Wook SHIN ,  Hye Yong CHU

    IPC分类号： H01L51/52

    CPC分类号： H01L51/5271 ,  H01L51/5036 ,  H01L51/5044

    摘要： Provided is a hybrid light emitting device. The hybrid light emitting device may include the first light emitting part on the substrate, the capping layer, and the second light emitting part. The first light emitting part may emit light having a first wavelength, and the first light emitting part may include a first electrode, an organic emitting layer, and a second electrode sequentially disposed. A second light emitting part may generate light having a second wavelength. A capping layer may be disposed between the organic emitting layer and the second light emitting part. The capping layer may reflect light having the first wavelength and transmit light having the second wavelength.

    摘要翻译： 提供了一种混合发光装置。 混合发光器件可以包括衬底上的第一发光部分，覆盖层和第二发光部分。 第一发光部分可以发射具有第一波长的光，并且第一发光部分可以包括顺序地布置的第一电极，有机发光层和第二电极。 第二发光部分可以产生具有第二波长的光。 可以在有机发光层和第二发光部分之间设置覆盖层。 覆盖层可以反射具有第一波长的光并透射具有第二波长的光。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20150349136A1

    公开(公告)日：2015-12-03

    申请号：US14611142

    申请日：2015-01-30

    申请人： Electronics and Telecommunications Research Institute

    发明人： Jae Bon KOO ,  Chan Woo PARK ,  Soon-Won JUNG ,  Bock Soon NA ,  Sang Chul LIM ,  Sang Seok LEE ,  Kyoung Ik CHO ,  Hye Yong CHU

    IPC分类号： H01L29/786 ,  H01L21/428 ,  H01L21/02 ,  H01L29/66

    CPC分类号： H01L29/78603 ,  H01L21/428 ,  H01L21/7813 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/1292 ,  H01L29/66969 ,  H01L29/7869

    摘要： Methods for manufacturing semiconductor devices according to embodiments of the present invention may include providing a sacrificial substrate including a wiring region and a device region, sequentially forming a sacrificial layer and a buffer layer on the sacrificial substrate, forming a thin-film transistor on the buffer layer of the device region, forming a device protection element surrounding the thin-film transistor within the device region, forming a flexible substrate on the buffer layer, and exposing a surface of the buffer layer by separating the sacrificial substrate by removing the sacrificial layer. Since typical semiconductor process technologies may be directly used, the process compatibility may be improved, and semiconductor devices having high resolution and high performance may be manufactured. Furthermore, since the thin-film transistor is protected by the device protection element, the deformation of semiconductor devices under flexibility conditions may be prevented, thereby improving the reliability of the semiconductor devices.

    摘要翻译： 根据本发明的实施例的制造半导体器件的方法可以包括提供包括布线区域和器件区域的牺牲衬底，在牺牲衬底上依次形成牺牲层和缓冲层，在缓冲器上形成薄膜晶体管 在器件区域内形成围绕薄膜晶体管的器件保护元件，在缓冲层上形成柔性衬底，并通过去除牺牲层来分离牺牲衬底来暴露缓冲层的表面。 由于可以直接使用典型的半导体工艺技术，因此可以提高工艺兼容性，并且可以制造具有高分辨率和高性能的半导体器件。 此外，由于薄膜晶体管被器件保护元件保护，所以可以防止半导体器件在柔性条件下的变形，从而提高半导体器件的可靠性。