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公开(公告)号:US10008155B2
公开(公告)日:2018-06-26
申请号:US15220713
申请日:2016-07-27
申请人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , University-Industry Cooperation Group of Kyung Hee Univ
发明人: Chunwon Byun , Jong-Heon Yang , Sung-Min Yoon , Kyoung Ik Cho , Chi-Sun Hwang
IPC分类号: G09G3/12 , G09G3/3266 , G09G3/3233
CPC分类号: G09G3/3266 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , G09G2310/0286 , G09G2310/0289 , G09G2310/0291 , G09G2330/021 , G09G2330/028
摘要: Provided is a gate driving circuit. The gate driving circuit includes an ith modulation circuit and an ith line selection circuit (where i is a natural number greater than 1). The ith modulation circuit outputs an ith modulation voltage to an ith line selection circuit based on received first to third control signals. The ith line selection circuit includes a memory transistor that is turned on or turned off according to a level of the received ith modulation voltage.
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公开(公告)号:US12021151B2
公开(公告)日:2024-06-25
申请号:US17523320
申请日:2021-11-10
申请人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , Korea Advanced Institute of Science and Technology
发明人: Chi-Sun Hwang , SangHee Park , KwangHeum Lee , Jae-Eun Pi , SeungHee Lee , Jong-Heon Yang , Ji Hun Choi
IPC分类号: H01L29/786 , H01L21/768 , H01L21/8234 , H01L29/40 , H01L29/49 , H01L29/66
CPC分类号: H01L29/78642 , H01L21/76877 , H01L21/823418 , H01L21/823437 , H01L29/401 , H01L29/4908 , H01L29/6653 , H01L29/6675 , H01L29/66969 , H01L29/78696 , H01L29/7869
摘要: A vertical channel thin film transistor includes substrate, lower source/drain electrode, spacer layer, upper source/drain electrode covering portion of upper surface of the spacer layer, interlayer insulating pattern covering portion of upper surface of the upper source/drain electrode and upper surface of the spacer layer exposed by the upper source/drain electrode, contact hole disposed on the lower source/drain electrode and passing through the interlayer insulating pattern, the upper source/drain electrode, and the spacer layer, active pattern covering inner wall and bottom surface of the contact hole and extending over upper surface of the upper source/drain electrode and upper surface of the interlayer insulating pattern, gate insulating pattern filling portion of the contact hole and extending along upper surface of the active pattern, and gate electrode filling portion of the contact hole and extending along upper surface of the gate insulating pattern.
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公开(公告)号:US11262611B2
公开(公告)日:2022-03-01
申请号:US16917454
申请日:2020-06-30
发明人: Gi Heon Kim , Won Jae Lee , Chi-Sun Hwang
IPC分类号: G02F1/1334 , G02F1/1343
摘要: Provided is a liquid crystal element. The liquid crystal element includes a first substrate, a first electrode provided on the first substrate, a liquid crystal layer provided on the first electrode and including a liquid crystal portion and a hydrophobic portion, and a second electrode on the liquid crystal layer, wherein the hydrophobic portion is phase-separated from the liquid crystal portion, wherein the liquid crystal portion includes polymer materials, a first dye, and liquid crystal molecules dispersed in the polymer materials, wherein the hydrophobic portion is spaced apart from the first electrode, wherein the hydrophobic portion includes hydrophobic materials and a second dye, wherein the first dye is dissolved in the polymer materials, wherein the second dye is dissolved in the hydrophobic portion, wherein the polymer materials include photo-curable polymer materials.
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公开(公告)号:US11081586B2
公开(公告)日:2021-08-03
申请号:US16672838
申请日:2019-11-04
发明人: Himchan Oh , Sun Jin Yun , Jeong Ik Lee , Chi-Sun Hwang
IPC分类号: H01L29/786 , H01L29/66 , H01L29/423 , H01L29/417
摘要: Provided is a thin film transistor. The thin film transistor includes a substrate, a channel part extending on the substrate in a first direction parallel to an upper surface of the substrate, source/drain electrodes connected to both ends of the channel part in the first direction, and a gate electrode spaced apart from the channel part in a second direction intersecting the first direction and parallel to the upper surface of the substrate. Each of the channel part, the source/drain electrodes, and the gate electrode is provided as a single layer.
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公开(公告)号:US10156760B2
公开(公告)日:2018-12-18
申请号:US15648916
申请日:2017-07-13
发明人: Sujung Kim , Gi Heon Kim , Yong Hae Kim , Chi-Sun Hwang
IPC分类号: G02F1/1334 , G02F1/137 , C09K19/60 , G02F1/1333 , C09K19/54 , G02F1/13363
摘要: A method for manufacturing a liquid crystal device includes preparing a precursor solution comprising a monomer, a blue dye, a green dye, and a red dye dissolved in the monomer, and liquid crystal molecules; and polymerizing the monomer of the precursor solution to form a liquid crystal layer. The blue dye, the green dye, and the red dye reflect light of different wavelengths from each other. A black color is available in a single pixel when, based on total amount of the blue dye, the green dye, and the red dye, the blue dye is present in an amount ranging from about 25 wt % to about 30 wt %, the green dye is present in an amount ranging from about 40 wt % to about 50 wt %, and the red dye is present in an amount ranging from about 25 wt % to about 30 wt %.
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公开(公告)号:US09952460B2
公开(公告)日:2018-04-24
申请号:US15010968
申请日:2016-01-29
发明人: Jong-Heon Yang , Jae Bon Koo , Byoung-Hwa Kwon , Gi Heon Kim , Yong Hae Kim , Hojun Ryu , Chan Woo Park , Chunwon Byun , Hyunkoo Lee , Jong Tae Lim , Kyoung Ik Cho , Seong-Mok Cho , Hye Yong Chu , Chi-Sun Hwang
IPC分类号: G02F1/1333 , G02F1/1335
CPC分类号: G02F1/133308 , G02F2001/133317 , G02F2001/133616 , G02F2201/44
摘要: Provided is a display device. The display device includes a lower display element where a substrate, a first lower electrode, a liquid crystal part, and a second lower electrode are sequentially stacked, an upper display element stacked vertical to the lower display element, where a first upper electrode, a light emitting part, a second upper electrode, and a protective part are sequentially stacked, and a middle part configured to deliver a driving signal to the lower and upper display elements, between the lower and upper display elements.
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公开(公告)号:US09252222B2
公开(公告)日:2016-02-02
申请号:US14800251
申请日:2015-07-15
发明人: Sung Haeng Cho , Sang-Hee Park , Chi-Sun Hwang
IPC分类号: H01L29/417 , H01L29/66 , H01L29/08 , H01L29/786
CPC分类号: H01L29/41775 , H01L29/0847 , H01L29/41733 , H01L29/41758 , H01L29/66742 , H01L29/66969 , H01L29/786 , H01L29/78603 , H01L29/7869
摘要: Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.
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公开(公告)号:US12013662B2
公开(公告)日:2024-06-18
申请号:US17523197
申请日:2021-11-10
发明人: Jae-Eun Pi , Yong Hae Kim , Jong-Heon Yang , Chul Woong Joo , Chi-Sun Hwang , Ha Kyun Lee , Seung Youl Kang , Gi Heon Kim , Joo Yeon Kim , Hee-ok Kim , Jeho Na , Jaehyun Moon , Won Jae Lee , Seong-Mok Cho , Ji Hun Choi
CPC分类号: G03H1/2249 , G01B11/026 , G06T7/536 , G03H2001/2281 , G03H2210/30 , G03H2222/12 , G03H2223/19 , G06T2207/10028
摘要: An apparatus which analyses a depth of a holographic image is provided. The apparatus includes an acquisition unit that acquires a hologram, a restoration unit that restores a three-dimensional holographic image by irradiating the hologram with a light source, an image sensing unit that senses a depth information image of the restored holographic image, and an analysis display unit that analyzes a depth quality of the holographic image, based on the sensed depth information image, and the image sensing unit uses a lensless type of photosensor.
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公开(公告)号:US11921383B2
公开(公告)日:2024-03-05
申请号:US18084203
申请日:2022-12-19
发明人: Yong Hae Kim , Chi-Sun Hwang
IPC分类号: G02F1/1343 , G02F1/1333 , G02F1/1335
CPC分类号: G02F1/134345 , G02F1/133357 , G02F1/133514 , G02F1/13439
摘要: Provided is a liquid crystal display device and a method for operating the liquid crystal display device. In the liquid crystal display device including a plurality of pixels, one pixel of the plurality of pixels includes a first sub pixel and a second sub pixel, which are adjacent to each other. The one pixel includes a first substrate, a first electrode provided on the first substrate, metamaterial layers provided on the first electrode, wherein the metamaterial layers include a first metamaterial layer within the first sub pixel and a second metamaterial layer within the second sub pixel, a liquid crystal layer provided on the first and second metamaterial layers, a second electrode provided on the liquid crystal layer, and a second substrate provided on the second electrode. The first and second metamaterial layers include metamaterials having properties different from each other, respectively.
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公开(公告)号:US11487348B2
公开(公告)日:2022-11-01
申请号:US16552550
申请日:2019-08-27
发明人: Chunwon Byun , Young-deuk Jeon , Chi-Sun Hwang , Chan-mo Kang , Yun-Jeong Kim , Hye Jin Kim , Seongdeok Ahn , Jeong Ik Lee , Seong Hyun Kim , Bock Soon Na
摘要: Provided is a pixel circuit. The pixel circuit includes a conversion element forming a voltage of an input level at a first node, a first transistor adjusting the voltage of the first node to a first level in response to a first signal received at a first time interval, a first capacitive element forming a voltage at a second node based on the voltage of the first node, a second transistor adjusting a level of the voltage of the second node to a second level in response to the first signal, a third transistor forming a voltage at a third node, a fourth transistor outputting a current in response to a second signal received in a second time interval, and a. fifth transistor adjusting the voltage of the third node to a third level in response to a third signal received in a third time interval.
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