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公开(公告)号：US20190006313A1
公开(公告)日：2019-01-03
申请号：US16106326
申请日：2018-08-21
IPC分类号： H01L23/00 , H01L21/20 , H01L21/70 , H01L21/762 , H01L21/18
摘要： A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.
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公开(公告)号：US10083933B2
公开(公告)日：2018-09-25
申请号：US14976484
申请日：2015-12-21
IPC分类号： H01L23/00 , H01L21/18 , H01L21/20 , H01L21/762 , H01L21/70
CPC分类号： H01L24/83 , H01L21/187 , H01L21/2007 , H01L21/70 , H01L21/76251 , H01L24/80 , H01L2224/80907 , H01L2224/83009 , H01L2224/83894 , H01L2224/83907 , H01L2924/01001 , H01L2924/01007 , H01L2924/01008 , H01L2924/01018 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106
摘要： A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.
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公开(公告)号：US20210202251A1
公开(公告)日：2021-07-01
申请号：US17174692
申请日：2021-02-12
IPC分类号： H01L21/20 , H01L21/02 , H01L21/268
摘要： A method for bonding a first substrate with a second substrate, with the following sequence: production of a first amorphous layer on the first substrate and/or production of a second amorphous layer on the second substrate, bonding of the first substrate with the second substrate at the amorphous layer or at the amorphous layers to form a substrate stack, irradiation of the amorphous layer or the amorphous layers with radiation in such a way that the amorphous layer or the amorphous layers is/are transformed into a crystalline layer or crystalline layers.
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公开(公告)号：US20190393037A1
公开(公告)日：2019-12-26
申请号：US16481994
申请日：2017-02-21
IPC分类号： H01L21/20 , H01L21/268 , H01L21/02
摘要： A method for bonding a first substrate with a second substrate, with the following sequence: production of a first amorphous layer on the first substrate and/or production of a second amorphous layer on the second substrate, bonding of the first substrate with the second substrate at the amorphous layer or at the amorphous layers to form a substrate stack, irradiation of the amorphous layer or the amorphous layers with radiation in such a way that the amorphous layer or the amorphous layers is/are transformed into a crystalline layer or crystalline layers.
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公开(公告)号：US20170229423A1
公开(公告)日：2017-08-10
申请号：US15499011
申请日：2017-04-27
IPC分类号： H01L23/00
CPC分类号： H01L24/83 , H01L21/0223 , H01L21/02255 , H01L21/187 , H01L21/2007 , H01L21/3105 , H01L21/76251 , H01L24/27 , H01L24/29 , H01L24/32 , H01L2224/27444 , H01L2224/278 , H01L2224/29188 , H01L2224/32145 , H01L2224/8309 , H01L2224/83896 , H01L2924/01013 , H01L2924/10252 , H01L2924/1032 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/10336 , H01L2924/10346 , H01L2924/1082 , H01L2924/10821 , H01L2924/10823 , H01L2924/20106
摘要： This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate with the following steps, especially the following sequence: forming a first reservoir in a surface layer on the first contact surface and a second reservoir in a surface layer on the second contact surface, the surface layers of the first and second contact surfaces being comprised of respective native oxide materials of one or more second educts respectively contained in reaction layers of the first and second substrates, partially filling the first and second reservoirs with one or more first educts; and reacting the first educts filled in the first reservoir with the second educts contained in the reaction layer of the second substrate to at least partially strengthen a permanent bond formed between the first and second contact surfaces.
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公开(公告)号：US20160111394A1
公开(公告)日：2016-04-21
申请号：US14976484
申请日：2015-12-21
IPC分类号： H01L23/00 , H01L21/762 , H01L21/18
CPC分类号： H01L24/83 , H01L21/187 , H01L21/2007 , H01L21/70 , H01L21/76251 , H01L24/80 , H01L2224/80907 , H01L2224/83009 , H01L2224/83894 , H01L2224/83907 , H01L2924/01001 , H01L2924/01007 , H01L2924/01008 , H01L2924/01018 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106
摘要： A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.
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公开(公告)号：US11862466B2
公开(公告)日：2024-01-02
申请号：US17174692
申请日：2021-02-12
IPC分类号： H01L21/20 , H01L21/02 , H01L21/268
CPC分类号： H01L21/2007 , H01L21/02356 , H01L21/268
摘要： A method for bonding a first substrate with a second substrate, with the following sequence: production of a first amorphous layer on the first substrate and/or production of a second amorphous layer on the second substrate, bonding of the first substrate with the second substrate at the amorphous layer or at the amorphous layers to form a substrate stack, irradiation of the amorphous layer or the amorphous layers with radiation in such a way that the amorphous layer or the amorphous layers is/are transformed into a crystalline layer or crystalline layers.
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公开(公告)号：US10971365B2
公开(公告)日：2021-04-06
申请号：US16481994
申请日：2017-02-21
IPC分类号： H01L21/20 , H01L21/02 , H01L21/268
摘要： A method for bonding a first substrate with a second substrate, with the following sequence: production of a first amorphous layer on the first substrate and/or production of a second amorphous layer on the second substrate, bonding of the first substrate with the second substrate at the amorphous layer or at the amorphous layers to form a substrate stack, irradiation of the amorphous layer or the amorphous layers with radiation in such a way that the amorphous layer or the amorphous layers is/are transformed into a crystalline layer or crystalline layers.
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