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18 条记录 (耗时 0.021 秒)

    Method of forming dimensionally precise slots in resilient mask of miniature component carrier
    1.
    发明授权
    Method of forming dimensionally precise slots in resilient mask of miniature component carrier 有权
    在微型部件载体的弹性掩模中形成尺寸精确的槽的方法

    公开(公告)号：US06919532B2

    公开(公告)日：2005-07-19

    申请号：US10678951

    申请日：2003-10-03

    申请人： Edward J. Swenson ,  John D. Stackpole ,  Yunlong Sun ,  Manoj Sammi

    发明人： Edward J. Swenson ,  John D. Stackpole ,  Yunlong Sun ,  Manoj Sammi

    IPC分类号： B23K26/18 ,  B23K26/38 ,  H05K13/00 ,  B23K26/00

    CPC分类号： H05K13/0084 ,  B23K26/0006 ,  B23K26/18 ,  B23K26/361 ,  B23K26/384 ,  B23K2103/50

    摘要： A laser beam (102) cuts through a component carrier mask (96) made of thin elastomeric material such as silicone rubber to form slots (98) having slot openings of a desired shape. In a preferred embodiment, a light absorptivity enhancement material such as iron oxide introduced into the silicone rubber causes formation of a flexible support blank that operationally adequately absorbs light within a light absorption wavelength range. A beam positioner (106) receiving commands from a programmed controller causes a UV laser beam of a wavelength that is within the light absorption wavelength range to cut into the mask multiple slots with repeatable, precise dimensions. Each of the slots cut has opposed side margins that define between them a slot opening of suitable shape to receive a miniature component (10) and to exert on it optimal holding and release forces.

    摘要翻译： 激光束（102）切穿由诸如硅橡胶的薄弹性体材料制成的部件载体掩模（96），以形成具有所需形状的槽口的槽（98）。 在优选的实施方案中，引入到硅橡胶中的诸如氧化铁的光吸收增强材料引起形成柔性支撑坯料，其可操作地充分吸收光吸收波长范围内的光。 从编程的控制器接收命令的光束定位器（106）使得在光吸收波长范围内的波长的UV激光束可以重复精确的尺寸切割成多个槽。 切割的每个切口具有相对的侧边缘，其在它们之间限定适当形状的狭槽开口，以接收微型部件（10）并且施加最佳的保持和释放力。

    Method of severing electrically conductive links with ultraviolet laser output
    4.
    发明授权
    Method of severing electrically conductive links with ultraviolet laser output 失效
    用紫外线激光输出切断导电连接的方法

    公开(公告)号：US6057180A

    公开(公告)日：2000-05-02

    申请号：US92490

    申请日：1998-06-05

    申请人： Yunlong Sun ,  Edward J. Swenson

    发明人： Yunlong Sun ,  Edward J. Swenson

    IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L21/82 ,  H01L23/52 ,  H01L71/82

    CPC分类号： H01L21/76894

    摘要： Ultraviolet (UV) laser output (88) exploits the absorption characteristics of the materials from which an electrically conductive link (42), an underlying semiconductor substrate (50), and passivation layers (48 and 54) are made to effectively remove the link (42) without damaging the substrate (50). The UV laser output (88) forms smaller than conventional IR laser link-blowing spot diameters (58) because of its shorter wavelength, thus permitting the implementation of greater circuit density. A passivation layer positioned between the link and the substrate can be formulated to be sufficiently absorptive to UV laser energy and sufficiently thick to attenuate the laser energy to prevent it from damaging the substrate (50) in the laser beam spot area (43) in both the off-link and link-overlapped portions. The UV laser output (88) can be employed to controllably ablate a depthwise portion of the passivation layer (54) underlying the link (42) to facilitate complete removal of the link (42). In addition, direct ablation of the passivation layer (48) with the UV laser output (88) facilitates predictable and consistent link severing profiles. The absorption characteristics of the passivation material also reduces the risk of damage to neighboring links or other active structures.

    摘要翻译： 紫外线（UV）激光输出（88）利用材料的吸收特性，导电连接（42），下面的半导体衬底（50）和钝化层（48和54）被制成以有效地去除连接 42），而不损坏基板（50）。 紫外激光输出（88）由于其波长较短而小于传统的红外激光链接发射光点直径（58），因此允许实现更大的电路密度。 定位在连接件和衬底之间的钝化层可被配制为对UV激光能量具有足够的吸收性，并且足够厚以衰减激光能量，以防止激光能量损坏激光束光斑区域（43）中的衬底（50） 脱离链接和链接重叠部分。 可以使用UV激光输出（88）来​​可控制地消融链路（42）下面的钝化层（54）的深度方向部分，以便于完全去除链路（42）。 此外，用UV激光输出（88）直接消融钝化层（48）有助于可预测和一致的链路切断简档。 钝化材料的吸收特性也降低了损坏相邻链节或其他活性结构的风险。

    Laser system for functional trimming of films and devices
    5.
    发明授权
    Laser system for functional trimming of films and devices 失效
    用于膜和器件功能修整的激光系统

    公开(公告)号：US5808272A

    公开(公告)日：1998-09-15

    申请号：US959140

    申请日：1997-10-28

    申请人： Yunlong Sun ,  Edward J. Swenson

    发明人： Yunlong Sun ,  Edward J. Swenson

    IPC分类号： B23K26/00 ,  B23K26/06

    CPC分类号： B23K26/032 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0665 ,  B23K26/351

    摘要： A laser system (50) and processing method exploit a wavelength range (40) in which devices, including any semiconductor material-based devices (10) affected by conventional laser wavelengths and devices having light-sensitive or photo-electronic portions integrated into their circuits, can be effectively functionally trimmed without inducing performance drift or malfunctions in the processed devices. True measurement values of operational parameters of the devices can, therefore, be obtained without delay for device recovery, i.e., can be obtained substantially instantaneously with laser impingement. Accordingly, the present invention allows faster functional laser processing, eases geometric restrictions on circuit design, and facilitates production of denser and smaller devices.

    摘要翻译： 激光系统（50）和处理方法利用波长范围（40），其中包括受常规激光波长影响的任何基于半导体材料的器件（10）的器件和具有集成到其电路中的光敏或光电子部分的器件 ，可以有效地进行功能修剪，而不会引起处理器件中的性能漂移或故障。 因此，可以无延迟地获得器件的操作参数的真实测量值，用于器件恢复，即可以通过激光冲击基本上即时获得。 因此，本发明允许更快的功能激光处理，简化了对电路设计的几何限制，并且便于生产更致密和更小的器件。

    Method of forming a scribe line on a ceramic substrate
    6.
    发明授权
    Method of forming a scribe line on a ceramic substrate 有权
    在陶瓷基板上形成划线的方法

    公开(公告)号：US06949449B2

    公开(公告)日：2005-09-27

    申请号：US10618377

    申请日：2003-07-11

    申请人： Edward J. Swenson ,  Yunlong Sun ,  Manoj Kumar Sammi ,  Jay Christopher Johnson

    发明人： Edward J. Swenson ,  Yunlong Sun ,  Manoj Kumar Sammi ,  Jay Christopher Johnson

    IPC分类号： B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  B23K26/40 ,  B28D5/00 ,  H01L21/301 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01S20060101

    CPC分类号： B23K26/0622 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/52 ,  B28D5/0011 ,  H01L2224/16 ,  H01L2924/0102 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/09701 ,  Y10S438/94

    摘要： A method of forming a scribe line having a sharp snap line entails directing a UV laser beam along a ceramic substrate such that a portion of the thickness of the ceramic substrate is removed. The UV laser beam forms a scribe line in the ceramic substrate in the absence of appreciable ceramic substrate melting so that a clearly defined snap line forms a region of high stress concentration extending into the thickness of the ceramic substrate. Consequently, multiple depthwise fractures propagate into the thickness of the ceramic substrate in the region of high stress concentration in response to a breakage force applied to either side of the scribe line to effect clean breakage of the ceramic substrate into separate circuit components. The formation of this region facilitates higher precision breakage of the ceramic substrate while maintaining the integrity of the interior structure of each component during and after application of the breakage force.

    摘要翻译： 形成具有尖锐捕捉线的划线的方法需要沿着陶瓷衬底引导UV激光束，使得陶瓷衬底的厚度的一部分被去除。 UV激光束在不存在可观的陶瓷衬底熔化的情况下在陶瓷衬底中形成划线，使得清晰定义的捕捉线形成延伸到陶瓷衬底的厚度的高应力集中区域。 因此，响应于施加到划线的任一侧的断裂力，多个深度方面的断裂在高应力集中区域中传播到陶瓷基板的厚度中，以使陶瓷基板清洁地破碎成单独的电路部件。 该区域的形成有助于陶瓷衬底的更高精度的破坏，同时在施加破损力的同时保持每个部件的内部结构的完整性。

    Semiconductor device and method for fabricating the same
    7.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US06664174B2

    公开(公告)日：2003-12-16

    申请号：US09928489

    申请日：2001-08-14

    申请人： Taiji Ema ,  Edward J. Swenson ,  Thomas W. Richardson ,  Yunlong Sun

    发明人： Taiji Ema ,  Edward J. Swenson ,  Thomas W. Richardson ,  Yunlong Sun

    IPC分类号： H01L2144

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor device includes a blocking layer 12 formed on a substrate 10, an insulation film 14 formed on the blocking layer 12, and a fuse 22 formed on the insulation film 14. The blocking layer 12 is formed below the fuse 22, whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer 12 with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.

    摘要翻译： 该半导体器件包括形成在基板10上的阻挡层12，形成在阻挡层12上的绝缘膜14以及形成在绝缘膜14上的保险丝22。阻挡层12形成在保险丝22的下方，从而保险丝 通过激光烧蚀断开，并且激光烧蚀可以通过阻挡层12以良好的可控性而停止，而不损坏衬底。 要断开的保险丝可以以非常小的间距布置，这可以提高保险丝电路的集成度。

    Laser based method and system for integrated circuit repair or reconfiguration
    9.
    发明授权
    Laser based method and system for integrated circuit repair or reconfiguration 失效
    用于集成电路修复或重新配置的基于激光的方法和系统

    公开(公告)号：US6025256A

    公开(公告)日：2000-02-15

    申请号：US898555

    申请日：1997-07-22

    申请人： Edward J. Swenson ,  Yunlong Sun ,  Richard S. Harris

    发明人： Edward J. Swenson ,  Yunlong Sun ,  Richard S. Harris

    IPC分类号： H01L21/302 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/82 ,  H01L23/52 ,  H01L21/44

    CPC分类号： H01L21/76894

    摘要： The present invention provides a method and system for irradiating resist material from multiple target positions (150) on one or more IC chips (12) with individually directed laser output pulses (74, 94). In one embodiment, an IC (12), including one or more etch targets (104, 106) such as conductive links (72, 92), is coated with an etch protection layer (90) of photoresist material. Then, position data direct, toward multiple positions (150) on the photoresist material, individual laser output pulses (94) of predetermined parameters selected to expose the photoresist material. Because photoresist exposure requires less energy than link blowing, low-power UV lasers (120) can be employed, and their shorter wavelengths permit a smaller practical laser output spot size (98). Because the nonablative process does not generate debris, an optical component (148) can be brought within 10 mm of etch protection layer (90) to focus the laser output pulses (94) to a spot size of less than two times the wavelength of laser output (140). Thus, an advantage of this embodiment permits microcircuit manufacturers to decrease the pitch distance (28) between circuit elements (14). After the photoresist layer (90) is developed, the accessible etch target (92) can be etched to repair or reconfigure the IC device. In another embodiment, slightly higher UV power laser output pulses (74) can be employed to ablate an etch protection resist layer (70) so any type of etch protection coating such as nonphotosensitive resist materials can be utilized with substantial manufacturing and cost benefits. Etching of the accessible etch targets (60, 62) follows this process.

    摘要翻译： 本发明提供了一种方法和系统，用于利用单独定向的激光输出脉冲（74,94）将多个目标位置（150）的抗蚀剂材料照射在一个或多个IC芯片（12）上。 在一个实施例中，包括一个或多个蚀刻目标（104,106）的IC（12），例如导电连接（72,92），涂覆有光刻胶材料的蚀刻保护层（90）。 然后，将位置数据直接指向光致抗蚀剂材料上的多个位置（150），选择用于曝光光致抗蚀剂材料的预定参数的各个激光输出脉冲（94）。 因为光刻胶的曝光需要比连接吹塑更少的能量，所以可以采用低功率UV激光器（120），而较短的波长允许更小的实际激光输出光斑尺寸（98）。 因为非烧蚀过程不会产生碎屑，所以可将光学部件（148）置于10mm蚀刻保护层（90）内，以将激光输出脉冲（94）聚焦到小于激光波长的两倍的光斑尺寸 输出（140）。 因此，该实施例的优点允许微电路制造商降低电路元件（14）之间的间距（28）。 在光致抗蚀剂层（90）显影之后，可蚀刻可访问蚀刻靶（92）以修复或重新配置IC器件。 在另一个实施例中，可以采用略高的UV功率激光输出脉冲（74）来消融蚀刻保护抗蚀剂层（70），因此可以利用任何类型的蚀刻保护涂层，例如非光敏抗蚀剂材料，具有显着的制造和成本优点。 该可访问蚀刻目标（60,62）的蚀刻遵循该过程。