Exposure system
    1.
    发明授权
    Exposure system 失效
    曝光系统

    公开(公告)号:US5276725A

    公开(公告)日:1994-01-04

    申请号:US996508

    申请日:1992-12-14

    IPC分类号: G03F7/20 G21K5/00

    CPC分类号: G03F7/702

    摘要: An exposure apparatus usable with a mask having a pattern and a wafer having a radiation-sensitive surface layer, for transferring with a radiation energy beam the pattern of the mask to the wafer, is disclosed. The apparatus includes a mask supporting member for supporting the mask; a wafer supporting member for supporting the wafer; a reflective member having a reflection surface and an indication pattern, the reflective member being supported by one of the mask supporting member and the wafer supporting member; an arrangement for projecting a beam, which is thinner than the radiation energy beam and which advances along or about the axis of the radiation energy beam, upon the reflective member; a device for observing a positional relationship between the indication pattern and a spot formed by projection of the thinner beam upon the reflective member; and a device for correcting a relationship between the indication pattern and the spot, on the basis of the observation.

    摘要翻译: 公开了一种可用于具有图案的掩模和具有辐射敏感表面层的晶片的曝光装置,用于将辐射能量束将掩模的图案转印到晶片。 该装置包括用于支撑面罩的面罩支撑构件; 用于支撑晶片的晶片支撑构件; 反射构件,其具有反射面和指示图案,所述反射构件由所述面罩支撑构件和所述晶片支撑构件中的一个支撑; 用于投射比辐射能量束更薄并且沿辐射能量束的轴线或围绕辐射能量束的轴线前进的光束的反射构件的布置; 用于观察指示图案与通过将较薄光束投射在反射构件上形成的光斑之间的位置关系的装置; 以及用于基于观察来校正指示图案与斑点之间的关系的装置。

    Exposure method
    5.
    发明授权
    Exposure method 失效
    曝光方法

    公开(公告)号:US5443932A

    公开(公告)日:1995-08-22

    申请号:US161099

    申请日:1993-12-03

    CPC分类号: G03F9/7023 G03F7/201

    摘要: An exposure method includes disposing a mask and a semiconductor wafer opposed to each other in a close proximity relation with respect to a Z-axis direction and printing a pattern of the mask on each of different shot areas of the semiconductor wafer in a step-and-repeat manner, with a predetermined exposure energy. In this method, the spacing between the mask and the wafer for the paralleling of them is made larger than the spacing therebetween as assumed at the time of mask-to-wafer alignment with respect to X-Y plane or the spacing between the mask and the wafer as assumed at the time of exposure of the wafer to the mask. After the paralleling of the mask and the wafer, the mask and the wafer are moved closer to each other in the Z-axis direction and alignment and exposure is performed. This ensures that the alignment and exposure are effected at an optimum spacing while, on the other hand, contact of the mask and the wafer at the time of paralleling is precluded.

    摘要翻译: 曝光方法包括以相对于Z轴方向彼此紧密相对的方式设置掩模和半导体晶片,并且在半导体晶片的不同照射区域的每一个上以均匀的方式印刷掩模的图案,并且 以预定的曝光能量。 在这种方法中,掩模和与它们并联的晶片之间的间隔被制成大于它们之间的间隔,如假设在相对于XY平面的掩模到晶片对准时或掩模和晶片之间的间隔 如在晶片暴露于掩模时所假设的那样。 在掩模和晶片平行之后,掩模和晶片在Z轴方向上彼此靠近移动,并进行对准和曝光。 这确保了对准和曝光以最佳间隔进行,另一方面,阻止了并联时的掩模与晶片的接触。