公开(公告)号：US07719028B2

公开(公告)日：2010-05-18

申请号：US12103280

申请日：2008-04-15

Applicant: Eiji Yagyu ,  Eitaro Ishimura ,  Masaharu Nakaji

Inventor： Eiji Yagyu ,  Eitaro Ishimura ,  Masaharu Nakaji

IPC: H01L31/0328

CPC classification number: H01L31/107 ,  H01L31/03046 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544

Abstract: A semiconductor light-receiving device and its manufacturing method are provided which are capable of suppressing dark current and deterioration. Semiconductor crystals were sequentially grown over an n-type InP substrate, including an n-type InP buffer layer, an undoped GaInAs light absorption layer, an undoped InP diffusion buffer layer, and a p-type InP window layer. Next, a first mesa was formed by removing a part from the p-type InP window layer to the n-type InP buffer layer with a Br-based etchant having low etching selectivity, so as to form a sloped “normal” mesa structure. Next, a second mesa having a smaller diameter than the first mesa was formed by dry etching, by precisely removing a part from the p-type InP window layer to a certain mid position of the undoped InP diffusion buffer layer.

Abstract translation: 提供能够抑制暗电流和劣化的半导体光接收装置及其制造方法。 半导体晶体依次生长在n型InP衬底上，包括n型InP缓冲层，未掺杂的GaInAs光吸收层，未掺杂的InP扩散缓冲层和p型InP窗口层。 接下来，通过使用具有低蚀刻选择性的Br基蚀刻剂从p型InP窗口层中去除一部分到n型InP缓冲层来形成第一台面，从而形成倾斜的“正常”台面结构。 接下来，通过干蚀刻，通过将p型InP窗口层中的一部分精确地去除到未掺杂的InP扩散缓冲层的某个中间位置，形成直径小于第一台面的第二台面。

公开(公告)号：US07538367B2

公开(公告)日：2009-05-26

申请号：US11515857

申请日：2006-09-06

Applicant: Eiji Yagyu ,  Eitaro Ishimura ,  Masaharu Nakaji

Inventor： Eiji Yagyu ,  Eitaro Ishimura ,  Masaharu Nakaji

IPC: H01L29/739 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/861 ,  H01L31/107 ,  H01L29/00 ,  H01L29/864

CPC classification number: H01L31/107

Abstract: The present invention provides an avalanche photodiode capable of raising productivity. An n-type InP buffer layer, an n-type GaInAs light absorption layer, an n-type GaInAsP transition layer, an n-type InP electric field adjusting layer, an n-type InP avalanche intensifying layer, an n-type AlInAs window layer and a p-type GaInAs contact layer are grown in order on an n-type InP substrate. Next, Be is ion-injected into an annular area along the outer periphery of a light receiving area which is activated by heat treatment so as to form an inclined joint, to obtain a p-type peripheral area for preventing an edge break down. Further, Zn is selectively diffused thermally into the light receiving area until it reaches the n-type InP avalanche intensifying layer so as to form a p-type conductive area.

Abstract translation: 本发明提供能够提高生产率的雪崩光电二极管。 n型InP缓冲层，n型GaInAs光吸收层，n型GaInAsP过渡层，n型InP电场调整层，n型InP雪崩增强层，n型AlInAs窗口 层和p型GaInAs接触层依次生长在n型InP衬底上。 接着，将Be沿着通过热处理而被激活的光接收区域的外周离子注入，形成倾斜接头，得到用于防止边缘破裂的p型周边区域。 此外，Zn被选择性地扩散到光接收区域中，直到其到达n型InP雪崩增强层，从而形成p型导电区域。

公开(公告)号：US20070096236A1

公开(公告)日：2007-05-03

申请号：US11515857

申请日：2006-09-06

Applicant: Eiji Yagyu ,  Eitaro Ishimura ,  Masaharu Nakaji

Inventor： Eiji Yagyu ,  Eitaro Ishimura ,  Masaharu Nakaji

IPC: H01L31/107

CPC classification number: H01L31/107

Abstract: The present invention provides an avalanche photodiode capable of raising productivity. An n-type InP buffer layer, an n-type GaInAs light absorption layer, an n-type GaInAsP transition layer, an n-type InP electric field adjusting layer, an n-type InP avalanche intensifying layer, an n-type AlInAs window layer and a p-type GaInAs contact layer are grown in order on an n-type InP substrate. Next, Be is ion-injected into an annular area along the outer periphery of a light receiving area which is activated by heat treatment so as to form an inclined joint, to obtain a p-type peripheral area for preventing an edge break down. Further, Zn is selectively diffused thermally into the light receiving area until it reaches the n-type InP avalanche intensifying layer so as to form a p-type conductive area.

Abstract translation: 本发明提供能够提高生产率的雪崩光电二极管。 n型InP缓冲层，n型GaInAs光吸收层，n型GaInAsP过渡层，n型InP电场调整层，n型InP雪崩增强层，n型AlInAs窗口 层和p型GaInAs接触层依次生长在n型InP衬底上。 接着，将Be沿着通过热处理而被激活的光接收区域的外周离子注入，形成倾斜接头，得到用于防止边缘破裂的p型周边区域。 此外，Zn被选择性地扩散到光接收区域中，直到其到达n型InP雪崩增强层，从而形成p型导电区域。

公开(公告)号：US20060017129A1

公开(公告)日：2006-01-26

申请号：US11136466

申请日：2005-05-25

Applicant: Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu ,  Nobuyuki Tomita

Inventor： Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu ,  Nobuyuki Tomita

IPC: H01L29/732

CPC classification number: H01L31/03046 ,  H01L31/107 ,  H01L31/1075 ,  Y02E10/544

Abstract: An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor multiplication layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a semiconductor light-absorbing layer interposed between the semiconductor multiplication layer and the second conductivity type semiconductor layer. The avalanche photodiode further comprises a multiplication suppressing layer which suppresses multiplication of charge carriers in the semiconductor light-absorbing layer, has a thickness of 0.6 μm or less, and is located between the semiconductor light-absorbing layer and the second conductivity type semiconductor layer. The thickness of the semiconductor light-absorbing layer is 0.5 μm or more.

Abstract translation: 雪崩光电二极管具有改进的低噪声特性，高速响应特性和灵敏度。 雪崩光电二极管包括第一导电类型半导体层，第二导电类型半导体层，介于第一导电类型半导体层和第二导电类型半导体层之间的半导体倍增层，以及插入在半导体乘法 层和第二导电类型半导体层。 雪崩光电二极管还包括抑制半导体光吸收层中的载流子的倍增的增殖抑制层，其厚度为0.6μm以下，位于半导体光吸收层与第二导电型半导体层之间。 半导体光吸收层的厚度为0.5μm以上。

公开(公告)号：US20090294787A1

公开(公告)日：2009-12-03

申请号：US12269206

申请日：2008-11-12

Applicant: Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu

Inventor： Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu

IPC: H01L33/00

CPC classification number: H01L31/105 ,  B82Y20/00 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1075 ,  H01S5/18361 ,  H01S5/323 ,  H01S2301/173

Abstract: An optical semiconductor device includes a distributed Bragg reflection layer of a first conductivity type, a distortion elaxation layer of the first conductivity type, a light absorbing layer, and a semiconductor layer of a second conductivity type, sequentially arranged on a semiconductor substrate. The distortion relaxation layer the same material as the semiconductor substrate. The total optical length of layers between the distributed Bragg reflection layer and the light absorbing layer is an integer multiple of one-half the wavelength of incident light that is detected.

Abstract translation: 一种光半导体器件包括依次配置在半导体衬底上的第一导电类型的分布布拉格反射层，第一导电类型的失真拉伸层，光吸收层和第二导电类型的半导体层。 失真弛豫层与半导体基板相同。 分布布拉格反射层和光吸收层之间的层的总光学长度是检测到的入射光的波长的一半的整数倍。

公开(公告)号：US20090289316A1

公开(公告)日：2009-11-26

申请号：US12252621

申请日：2008-10-16

Applicant: Eitaro ISHIMURA ,  Masaharu Nakaji ,  Eiji Yagyu

Inventor： Eitaro ISHIMURA ,  Masaharu Nakaji ,  Eiji Yagyu

IPC: H01L31/0232

CPC classification number: B82Y20/00 ,  H01L31/02327 ,  H01L31/107

Abstract: An optical semiconductor device comprises a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a semiconductor layer of a second conductivity type, sequentially formed on a semiconductor substrate; wherein said Bragg reflection layer of the first conductivity type has first semiconductor layers having a band gap wavelength larger than the wavelength of incident light, and second semiconductor layers having a band gap wavelength smaller than the wavelength of incident light; and an optical layer thickness of each of said first semiconductor layers is larger than the optical layer thickness of each of said second semiconductor layers.

Abstract translation: 光半导体器件包括依次形成在半导体衬底上的第一导电类型的分布布拉格反射器层，光吸收层和第二导电类型的半导体层; 其中所述第一导电类型的所述布拉格反射层具有带隙波长大于入射光波长的第一半导体层，以及具有小于入射光波长的带隙波长的第二半导体层; 并且每个所述第一半导体层的光学层厚度大于每个所述第二半导体层的光学层厚度。

公开(公告)号：US07187013B2

公开(公告)日：2007-03-06

申请号：US11136466

申请日：2005-05-25

Applicant: Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu ,  Nobuyuki Tomita

Inventor： Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu ,  Nobuyuki Tomita

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L31/03046 ,  H01L31/107 ,  H01L31/1075 ,  Y02E10/544

Abstract: An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor multiplication layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a semiconductor light-absorbing layer interposed between the semiconductor multiplication layer and the second conductivity type semiconductor layer. The avalanche photodiode further comprises a multiplication suppressing layer which suppresses multiplication of charge carriers in the semiconductor light-absorbing layer, has a thickness of 0.6 μm or less, and is located between the semiconductor light-absorbing layer and the second conductivity type semiconductor layer. The thickness of the semiconductor light-absorbing layer is 0.5 μm or more.

Abstract translation: 雪崩光电二极管具有改进的低噪声特性，高速响应特性和灵敏度。 雪崩光电二极管包括第一导电类型半导体层，第二导电类型半导体层，介于第一导电类型半导体层和第二导电类型半导体层之间的半导体倍增层，以及插入在半导体乘法 层和第二导电类型半导体层。 雪崩光电二极管还包括抑制半导体光吸收层中的电荷载流子的倍增的增殖抑制层，其厚度为0.6μm以下，位于半导体光吸收层与第二导电型半导体层之间。 半导体光吸收层的厚度为0.5μm以上。

公开(公告)号：US20110241070A1

公开(公告)日：2011-10-06

申请号：US13160286

申请日：2011-06-14

Applicant: Eiji YAGYU ,  Eitaro Ishimura ,  Masaharu Nakaji

Inventor： Eiji YAGYU ,  Eitaro Ishimura ,  Masaharu Nakaji

IPC: H01L31/107

CPC classification number: H01L31/1075 ,  H01L31/0352 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

Abstract: An avalanche photodiode including a first electrode; and a substrate including a first semiconductor layer of a first conduction type electrically connected to the first electrode, in which at least an avalanche multiplication layer, a light absorption layer, and a second semiconductor layer of a second conduction type with a larger band gap than the light absorption layer are deposited on the substrate. The second semiconductor layer is separated into inner and outer regions by a groove formed therein, the inner region electrically connected to a second. With the configuration, the avalanche photodiode has a low dark current and high long-term reliability. In addition, the outer region includes an outer trench, and at least the light absorption layer is removed by the outer trench to form a side face of the light absorption layer. With the configuration, the dark current can be further reduced.

Abstract translation: 一种雪崩光电二极管，包括第一电极; 以及基板，包括电连接到所述第一电极的第一导电类型的第一半导体层，其中至少具有比所述第一电极具有更大带隙的第二导电类型的雪崩倍增层，光吸收层和第二半导体层 光吸收层沉积在基底上。 第二半导体层通过其中形成的沟槽分成内部和外部区域，内部区域电连接到第二半导体层。 通过该配置，雪崩光电二极管具有低暗电流和高长期可靠性。 此外，外部区域包括外部沟槽，并且至少光吸收层被外部沟槽去除以形成光吸收层的侧面。 通过该结构，可以进一步减小暗电流。

公开(公告)号：US07910953B2

公开(公告)日：2011-03-22

申请号：US12269206

申请日：2008-11-12

Applicant: Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu

Inventor： Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu

IPC: H01L33/00

CPC classification number: H01L31/105 ,  B82Y20/00 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1075 ,  H01S5/18361 ,  H01S5/323 ,  H01S2301/173

Abstract: An optical semiconductor device includes a distributed Bragg reflection layer of a first conductivity type, a distortion elaxation layer of the first conductivity type, a light absorbing layer, and a semiconductor layer of a second conductivity type, sequentially arranged on a semiconductor substrate. The distortion relaxation layer the same material as the semiconductor substrate. The total optical length of layers between the distributed Bragg reflection layer and the light absorbing layer is an integer multiple of one-half the wavelength of incident light that is detected.

Abstract translation: 一种光半导体器件包括依次配置在半导体衬底上的第一导电类型的分布布拉格反射层，第一导电类型的失真拉伸层，光吸收层和第二导电类型的半导体层。 失真弛豫层与半导体基板相同。 分布布拉格反射层和光吸收层之间的层的总光学长度是检测到的入射光的波长的一半的整数倍。

公开(公告)号：US20080290369A1

公开(公告)日：2008-11-27

申请号：US12103280

申请日：2008-04-15

Applicant: Eiji Yagyu ,  Eitaro Ishimura ,  Masaharu Nakaji

Inventor： Eiji Yagyu ,  Eitaro Ishimura ,  Masaharu Nakaji

IPC: H01L31/109 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L31/03046 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544

Abstract: A semiconductor light-receiving device and its manufacturing method are provided which are capable of suppressing dark current and deterioration. Semiconductor crystals were sequentially grown over an n-type InP substrate, including an n-type InP buffer layer, an undoped GaInAs light absorption layer, an undoped InP diffusion buffer layer, and a p-type InP window layer. Next, a first mesa was formed by removing a part from the p-type InP window layer to the n-type InP buffer layer with a Br-based etchant having low etching selectivity, so as to form a sloped “normal” mesa structure. Next, a second mesa having a smaller diameter than the first mesa was formed by dry etching, by precisely removing a part from the p-type InP window layer to a certain mid position of the undoped InP diffusion buffer layer.

Abstract translation: 提供能够抑制暗电流和劣化的半导体光接收装置及其制造方法。 半导体晶体依次生长在n型InP衬底上，包括n型InP缓冲层，未掺杂的GaInAs光吸收层，未掺杂的InP扩散缓冲层和p型InP窗口层。 接下来，通过使用具有低蚀刻选择性的Br基蚀刻剂从p型InP窗口层中去除一部分到n型InP缓冲层来形成第一台面，从而形成倾斜的“正常”台面结构。 接下来，通过干蚀刻，通过将p型InP窗口层中的一部分精确地去除到未掺杂的InP扩散缓冲层的某个中间位置，形成直径小于第一台面的第二台面。