-
公开(公告)号：US06276370B1
公开(公告)日：2001-08-21
申请号：US09343827
申请日：1999-06-30
IPC分类号： B08B302
CPC分类号： H01L21/67057 , B08B3/12 , G10K15/02 , Y10S134/902
摘要： An array of ultrasonic or megasonic transducers is used to clean a substrate. An interference signal that is the superposition of the signals from each transducer enhances the cleaning. The system improves cleaning by providing a higher intensity beam than is available from uncoupled transducers to facilitate removal of smaller particles. In addition, the beam can be swept across the substrate to provide a uniform cleaning of the entire surface, avoiding dead spots. The system can be adapted for use in a vessel or for single wafer processing with a stream of fluid or a puddle of fluid.
摘要翻译： 使用超声波或兆声波换能器阵列来清洁基底。 作为来自每个换能器的信号的叠加的干扰信号增强了清洁。 该系统通过提供比不连接的换能器可获得的更高强度的束来改善清洁以便于去除更小的颗粒。 此外，梁可以扫过基板，以提供对整个表面的均匀清洁，从而避免死点。 该系统可以适用于容器中或用于具有流体流或流体池的单晶片处理。
-
2.发明授权Array foreshortening measurement using a critical dimension scanning electron microscope 失效使用临界尺寸扫描电子显微镜进行阵列缩小测量公开(公告)号：US06683306B2
公开(公告)日：2004-01-27
申请号：US09878580
申请日：2001-06-11
IPC分类号： G01N2300
CPC分类号： G03F7/70625 , G01B15/04 , H01J2237/2814
摘要： A method and system for measuring lithographic image foreshortening. The method comprises the steps of providing a critical dimension scanning electron microscope, and using that critical dimension scanning electron microscope to measure lithographic image foreshortening. Preferably, a defined feature is formed using a lithographic process, and the critical dimension scanning electron microscope is used to measure foreshortening of that feature. For example, the feature may be a line, and the critical dimension scanning electron microscope may be used to measure foreshortening of the line. Also, the feature may be two arrays of lines, and the critical dimension scanning electron microscope may be used to measure the separation distance between the arrays. That separation distance may be used to determine a focus of the lithographic process.
摘要翻译： 用于测量平版印刷图像缩小的方法和系统。 该方法包括提供临界尺寸扫描电子显微镜，并使用临界尺寸扫描电子显微镜测量平版印刷图像缩小。 优选地，使用光刻工艺形成限定的特征，并且使用临界尺寸扫描电子显微镜来测量该特征的缩短。 例如，该特征可以是线，并且临界尺寸扫描电子显微镜可以用于测量线的缩短。 此外，该特征可以是两个线阵列，并且临界尺寸扫描电子显微镜可以用于测量阵列之间的间隔距离。 该分离距离可用于确定光刻工艺的焦点。
-
公开(公告)号：US06577406B2
公开(公告)日：2003-06-10
申请号：US09683551
申请日：2002-01-17
申请人： James A. Bruce , Orest Bula , Emily E. Fisch
发明人： James A. Bruce , Orest Bula , Emily E. Fisch
IPC分类号： G01B1100
CPC分类号： G03F7/70641
摘要： A control target structure and method for monitoring the lithographic affects on minimum feature in a lithographic process. The control target uses line array elements having a nominal width. By changing the shape of the line-ends of the elements the control target can be optimized for controlling either focus or dose.
-
4.发明授权Structure and method for detection of physical interference during transport of an article 失效用于检测物品运输过程中的物理干扰的结构和方法公开(公告)号：US06282459B1
公开(公告)日：2001-08-28
申请号：US09144734
申请日：1998-09-01
IPC分类号： G06F1900
CPC分类号： G01H1/00 , Y10S414/141
摘要： A method for detecting physical interference with desired transport of an article. The method includes the step of detecting an operative acoustic signal representing the structure-borne sound pattern of an article during said article transport, and detecting the presence of interference based on the acoustic signal. A system for performing the method includes a transport device adapted to transport the article through a predetermined path and an acoustic sensor in structure-borne acoustic contact with the transport device and capable of producing an acoustic signal indicative of physical interference.
摘要翻译： 一种用于检测物品的期望运输物理干扰的方法。 该方法包括在所述物品传送期间检测表示物品的结构声音模式的可操作声信号的步骤，以及基于声信号检测干扰的存在。 用于执行该方法的系统包括适于将物品传送通过预定路径的传送装置和与传送装置的结构声学接触的声学传感器，并且能够产生指示物理干扰的声学信号。
-
公开(公告)号：US06777137B2
公开(公告)日：2004-08-17
申请号：US10064401
申请日：2002-07-10
IPC分类号： G03F900
摘要： An extreme ultraviolet lithography (EUVL) mask structure and associated method of formation. A first conductive layer is provided between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack. The multilayer stack is adapted to substantially reflect EUV radiation incident thereon. The absorber layer is adapted to absorb essentially all of EUV radiation incident thereon. A mask pattern is formed in the absorber layer. Formation of the mask pattern in the absorber layer is accompanied by inadvertent formation of a defect in the absorber layer. The defect is subsequently repaired. The mask pattern may be extended into the first conductive layer and into the buffer layer in a substantially defect-free process that exposes a portion of the multilayer stack. A second conductive layer may be provided on the absorber layer, wherein the mask pattern is also formed in the second conductive layer.
-
公开(公告)号：US06699400B1
公开(公告)日：2004-03-02
申请号：US09326514
申请日：1999-06-04
IPC分类号： H01L2100
CPC分类号： H01L21/67086 , H01L21/31111 , H01L21/32134 , Y10S134/902
摘要： In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon nitride and installed in the recirculating path. As the etchant (12) in the recirculating path flows through the porous filter (35), the silicon nitride on the porous filter (35) dissolves into the etchant (12). In the tank (11), the silicon nitride dissolved in the etchant (12) significantly suppresses the etch of silicon dioxide on the semiconductor wafer (15), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant (12) stabilizes the etch selectivity of the process.
摘要翻译： 在使用热磷酸蚀刻剂（12）蚀刻浸没在蚀刻剂（12）的罐（11）中的半导体晶片（15）上的氮化硅的方法中，为蚀刻剂（12）建立再循环路径。 多孔过滤器（35）涂覆有氮化硅并且安装在再循环路径中。 当再循环路径中的蚀刻剂（12）流过多孔过滤器（35）时，多孔过滤器（35）上的氮化硅溶解到蚀刻剂（12）中。 在罐（11）中，溶解在蚀刻剂（12）中的氮化硅显着地抑制了半导体晶片（15）上的二氧化硅的蚀刻，从而提高了工艺的蚀刻选择性。 监测和维持蚀刻剂（12）中氮化硅的浓度稳定了工艺的蚀刻选择性。
-
公开(公告)号：US07332054B2
公开(公告)日：2008-02-19
申请号：US10760896
申请日：2004-01-20
CPC分类号： H01L21/67086 , H01L21/31111 , H01L21/32134 , Y10S134/902
摘要： In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon nitride and installed in the recirculating path. As the etchant (12) in the recirculating path flows through the porous filter (35), the silicon nitride on the porous filter (35) dissolves into the etchant (12). In the tank (11), the silicon nitride dissolved in the etchant (12) significantly suppresses the etch of silicon dioxide on the semiconductor wafer (15), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant (12) stabilizes the etch selectivity of the process.
摘要翻译： 在使用热磷酸蚀刻剂（12）蚀刻浸没在蚀刻剂（12）的罐（11）中的半导体晶片（15）上的氮化硅的方法中，为蚀刻剂（12）建立再循环路径。 多孔过滤器（35）涂覆有氮化硅并且安装在再循环路径中。 当再循环路径中的蚀刻剂（12）流过多孔过滤器（35）时，多孔过滤器（35）上的氮化硅溶解到蚀刻剂（12）中。 在罐（11）中，溶解在蚀刻剂（12）中的氮化硅显着地抑制了半导体晶片（15）上的二氧化硅的蚀刻，从而提高了工艺的蚀刻选择性。 监测和维持蚀刻剂（12）中氮化硅的浓度稳定了工艺的蚀刻选择性。
-
公开(公告)号：US06372573B1
公开(公告)日：2002-04-16
申请号：US09426754
申请日：1999-10-26
申请人： Masami Aoki , Hirofumi Inoue , Bruce W. Porth , Max G. Levy , Victor R. Nastasi , Emily E. Fisch , Paul C. Buschner
发明人： Masami Aoki , Hirofumi Inoue , Bruce W. Porth , Max G. Levy , Victor R. Nastasi , Emily E. Fisch , Paul C. Buschner
IPC分类号： H01L218242
摘要： A process for eliminating roughness on a silicon nitride trench liner is disclosed. A capping film on the top of the trench is formed in a self-aligned manner. This capping film prevents short circuits between a storage node and a passing word-line.
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.021 秒)
