-
公开(公告)号：US07332054B2
公开(公告)日：2008-02-19
申请号：US10760896
申请日：2004-01-20
CPC分类号： H01L21/67086 , H01L21/31111 , H01L21/32134 , Y10S134/902
摘要： In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon nitride and installed in the recirculating path. As the etchant (12) in the recirculating path flows through the porous filter (35), the silicon nitride on the porous filter (35) dissolves into the etchant (12). In the tank (11), the silicon nitride dissolved in the etchant (12) significantly suppresses the etch of silicon dioxide on the semiconductor wafer (15), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant (12) stabilizes the etch selectivity of the process.
摘要翻译： 在使用热磷酸蚀刻剂（12）蚀刻浸没在蚀刻剂（12）的罐（11）中的半导体晶片（15）上的氮化硅的方法中，为蚀刻剂（12）建立再循环路径。 多孔过滤器（35）涂覆有氮化硅并且安装在再循环路径中。 当再循环路径中的蚀刻剂（12）流过多孔过滤器（35）时，多孔过滤器（35）上的氮化硅溶解到蚀刻剂（12）中。 在罐（11）中，溶解在蚀刻剂（12）中的氮化硅显着地抑制了半导体晶片（15）上的二氧化硅的蚀刻，从而提高了工艺的蚀刻选择性。 监测和维持蚀刻剂（12）中氮化硅的浓度稳定了工艺的蚀刻选择性。
-
公开(公告)号：US06699400B1
公开(公告)日：2004-03-02
申请号：US09326514
申请日：1999-06-04
IPC分类号： H01L2100
CPC分类号： H01L21/67086 , H01L21/31111 , H01L21/32134 , Y10S134/902
摘要： In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon nitride and installed in the recirculating path. As the etchant (12) in the recirculating path flows through the porous filter (35), the silicon nitride on the porous filter (35) dissolves into the etchant (12). In the tank (11), the silicon nitride dissolved in the etchant (12) significantly suppresses the etch of silicon dioxide on the semiconductor wafer (15), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant (12) stabilizes the etch selectivity of the process.
摘要翻译： 在使用热磷酸蚀刻剂（12）蚀刻浸没在蚀刻剂（12）的罐（11）中的半导体晶片（15）上的氮化硅的方法中，为蚀刻剂（12）建立再循环路径。 多孔过滤器（35）涂覆有氮化硅并且安装在再循环路径中。 当再循环路径中的蚀刻剂（12）流过多孔过滤器（35）时，多孔过滤器（35）上的氮化硅溶解到蚀刻剂（12）中。 在罐（11）中，溶解在蚀刻剂（12）中的氮化硅显着地抑制了半导体晶片（15）上的二氧化硅的蚀刻，从而提高了工艺的蚀刻选择性。 监测和维持蚀刻剂（12）中氮化硅的浓度稳定了工艺的蚀刻选择性。
-
3.发明授权Structure and method for detection of physical interference during transport of an article 失效用于检测物品运输过程中的物理干扰的结构和方法公开(公告)号：US06282459B1
公开(公告)日：2001-08-28
申请号：US09144734
申请日：1998-09-01
IPC分类号： G06F1900
CPC分类号： G01H1/00 , Y10S414/141
摘要： A method for detecting physical interference with desired transport of an article. The method includes the step of detecting an operative acoustic signal representing the structure-borne sound pattern of an article during said article transport, and detecting the presence of interference based on the acoustic signal. A system for performing the method includes a transport device adapted to transport the article through a predetermined path and an acoustic sensor in structure-borne acoustic contact with the transport device and capable of producing an acoustic signal indicative of physical interference.
摘要翻译： 一种用于检测物品的期望运输物理干扰的方法。 该方法包括在所述物品传送期间检测表示物品的结构声音模式的可操作声信号的步骤，以及基于声信号检测干扰的存在。 用于执行该方法的系统包括适于将物品传送通过预定路径的传送装置和与传送装置的结构声学接触的声学传感器，并且能够产生指示物理干扰的声学信号。
-
公开(公告)号：US06759260B2
公开(公告)日：2004-07-06
申请号：US10421986
申请日：2003-04-23
申请人： Arne W. Ballantine , Edward C. Cooney, III , Jeffrey D. Gilbert , Robert G. Miller , Amy L. Myrick , Ronald A. Warren
发明人： Arne W. Ballantine , Edward C. Cooney, III , Jeffrey D. Gilbert , Robert G. Miller , Amy L. Myrick , Ronald A. Warren
IPC分类号： H01L2166
CPC分类号： H01L21/67248 , H01L21/67098
摘要： A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600° C., wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600° C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface. In addition, the monitor may be reconditioned for repeated use by heating the monitor in a hydrogen ambient environment to convert the oxide layer to unoxidized copper. Additionally, the oxide layer has a color that is a function of the oxide layer thickness, where the color may be used to estimate the temperature at which the wafer was heated in the ambient oxygen atmosphere.
摘要翻译： 一种用于监测加热室中温度范围为200至600℃的温度和温度分布的方法和相关结构，其中加热室可用于制造半导体器件。 铜层沉积在半导体晶片的表面上。 接下来，将晶片在环境氧气氛中加热到200-600℃的温度。晶片的加热使生成氧化物层的铜层的一部分氧化。 加热后，去除晶片，并在晶片表面上的点测量薄层电阻。 由于局部薄层电阻是氧化物层的局部厚度的函数，所以晶片表面上的薄层电阻的空间分布反映了在晶片加热期间晶片温度跨晶片表面的分布。 测量的薄层电阻的空间分布可以用于重新调整输入到另一晶片的热空间分布，以便在另一晶片的表面上实现更均匀的温度。 此外，可以通过在氢环境环境中加热监测器来重新使用监视器以重新使用以将氧化物层转化为未氧化的铜。 此外，氧化物层具有作为氧化物层厚度的函数的颜色，其中可以使用颜色来估计晶片在环境氧气氛中被加热的温度。
-
公开(公告)号：US06580140B1
公开(公告)日：2003-06-17
申请号：US09665584
申请日：2000-09-18
申请人： Arne W. Ballantine , Edward C. Cooney, III , Jeffrey D. Gilbert , Robert G. Miller , Amy L. Myrick , Ronald A. Warren
发明人： Arne W. Ballantine , Edward C. Cooney, III , Jeffrey D. Gilbert , Robert G. Miller , Amy L. Myrick , Ronald A. Warren
IPC分类号： H01L31058
CPC分类号： H01L21/67248 , H01L21/67098
摘要： A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600° C., wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600° C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface. In addition, the monitor may be reconditioned for repeated use by heating the monitor in a hydrogen ambient environment to convert the oxide layer to unoxidized copper. Additionally, the oxide layer has a color that is a function of the oxide layer thickness, where the color may be used to estimate the temperature at which the wafer was heated in the ambient oxygen atmosphere.
-
公开(公告)号：US6105274A
公开(公告)日：2000-08-22
申请号：US271527
申请日：1999-03-18
CPC分类号： H01L21/67109
摘要： A process for treating a workpiece. The workpiece is cooled by directing toward the workpiece a material that includes a gas and particles of a material that undergoes a phase change when applied to the workpiece. The gas and the particle material are non-reactive with the workpiece during the cooling.
摘要翻译： 一种处理工件的工艺。 通过向工件引导包括气体的材料和当施加到工件时经历相变的材料的颗粒来冷却工件。 气体和颗粒材料在冷却过程中与工件无反应。
-
公开(公告)号：US06339022B1
公开(公告)日：2002-01-15
申请号：US09475712
申请日：1999-12-30
申请人： Arne W. Ballantine , Edward C. Cooney, III , George A. Dunbar, III , Cheryl G. Faltermeier , Jeffrey D. Gilbert , Ronald D. Goldblatt , Nancy A. Greco , Stephen E. Greco , Frank V. Liucci , Glenn Robert Miller , Bruce A. Root , Andrew H. Simon , Anthony K. Stamper , Ronald A. Warren , David H. Yao
发明人： Arne W. Ballantine , Edward C. Cooney, III , George A. Dunbar, III , Cheryl G. Faltermeier , Jeffrey D. Gilbert , Ronald D. Goldblatt , Nancy A. Greco , Stephen E. Greco , Frank V. Liucci , Glenn Robert Miller , Bruce A. Root , Andrew H. Simon , Anthony K. Stamper , Ronald A. Warren , David H. Yao
IPC分类号： H01L2144
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A method for increasing the production yield of semiconductor devices having copper metallurgy planarized by a chemical-mechanical planarization process which includes a slurry that contains a conductor passivating agent, like benzotriazole, wherein a non-oxidizing anneal is used to remove any residue which might interfere with mechanical probing of conductive lands on the substrate prior to further metallization steps. The anneal may be performed by any of several techniques including a vacuum chamber, a standard furnace or by rapid thermal annealing.
摘要翻译： 一种通过化学机械平面化方法提高具有铜冶金平面化的半导体器件的生产率的方法，该方法包括含有导体钝化剂（如苯并三唑）的浆料，其中使用非氧化退火来除去可能干扰的任何残余物 在进一步的金属化步骤之前，在衬底上的导电焊盘的机械探测。 退火可以通过几种技术中的任何一种进行，包括真空室，标准炉或快速热退火。
-
公开(公告)号：US5539080A
公开(公告)日：1996-07-23
申请号：US424986
申请日：1995-04-19
IPC分类号： C08G73/10 , C08K5/3437 , C08L77/00 , C08L79/08 , G03F7/09 , G03F7/11 , H01L21/027
CPC分类号： G03F7/091 , Y10S428/901 , Y10S430/11 , Y10T428/24917 , Y10T428/31692 , Y10T428/31721
摘要： A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.
摘要翻译： 公开了一种用于通过光刻制造电路元件的方法，包括在衬底上沉积抗反射聚酰亚胺或聚酰亚胺前体层并在200℃至500℃下加热衬底以提供包括抗反射聚酰亚胺层的功能集成电路元件。 抗反射聚酰亚胺层含有足够浓度的至少一种发色团，以产生足够的吸光度，以减弱405或436nm处的光化辐射。 优选的发色团包括由苝，萘和蒽醌衍生的那些。 发色团可以存在于作为聚酰亚胺涂料混合物的组分的染料中，或者可以存在于聚酰亚胺本身中的残余物中。
-
公开(公告)号：US5982225A
公开(公告)日：1999-11-09
申请号：US907149
申请日：1997-08-06
申请人： Timothy E. Forhan , Terence B. Hook , Steven W. Mittl , Edward J. Nowak , Madhu Sayala , Ronald A. Warren
发明人： Timothy E. Forhan , Terence B. Hook , Steven W. Mittl , Edward J. Nowak , Madhu Sayala , Ronald A. Warren
IPC分类号： H03K17/10 , H03K17/14 , H03K17/06 , H03K17/687
CPC分类号： H03K17/102 , H03K17/145
摘要： A circuit actively monitors and measures the amount of MOS device degradation due to, for example, the hot electron effect, and makes compensatory adjustments to device voltage levels or clock speed to maintain desired levels of functionality and performance. Monitoring can be done separately for NFET and PFET devices to selectively adjust for different degradation rates between the two. In operation, the monitor circuit compares the performance of a stressed device to a reference device, that is, an unstressed device which has not been degraded by the hot-electron effect. The monitor circuit outputs a signal indicating the amount of device degradation. This signal is used to adjust the supply voltage to that device or to the chip or otherwise compensate for the degradation. The monitor circuit can be formed on-chip or off-chip.
摘要翻译： 电路主动监测和测量由于例如热电子效应引起的MOS器件退化的量，并且对器件电压电平或时钟速度进行补偿性调整以维持期望的功能和性能水平。 可以分别对NFET和PFET器件进行监控，以选择性地调整两者之间的不同降解率。 在操作中，监视电路将应力装置的性能与参考装置进行比较，即，未受热电子效应劣化的未受应力的装置。 监视电路输出指示设备劣化量的信号。 该信号用于调整该器件或芯片的电源电压或以其他方式补偿降级。 监控电路可以片上或片外形成。
-
公开(公告)号：US5427622A
公开(公告)日：1995-06-27
申请号：US276684
申请日：1994-07-18
CPC分类号： H01L21/67057 , E04B2001/8419 , Y10S134/902
摘要： Apparatus and method for cleaning/etching the surface of an article with sonic energy in the megahertz range which employ an anti-reflection mechanism within a recirculation tank. A tank having at least one side wall and a bottom structure holds a cleaning/etching liquid and a megasonic transducer is associated with the tank for projecting megasonic energy into the liquid. The anti-reflection mechanism is disposed within the tank in close association with the at least one sidewall or bottom structure of the tank to thereby minimize reflection of megasonic energy from the associated surface. Preferably, the megasonic transducer is associated with a first tank sidewall which opposes a second tank sidewall, and the anti-reflection mechanism is disposed adjacent the second tank sidewall. By way of example, the anti-reflection mechanism can comprise a stream of gas bubbles, a plurality of anechoic structures, or a combination of both gas bubbles and anechoic structures.
摘要翻译： 用于在兆赫兹范围内用声能量清洁/蚀刻物品的表面的装置和方法，其在循环罐内采用防反射机构。 具有至少一个侧壁和底部结构的罐保持清洁/蚀刻液体，并且兆声波换能器与用于将兆声波能量投射到液体中的罐相关联。 防反射机构设置在罐内与罐的至少一个侧壁或底部结构紧密相关联，从而最小化来自相关联表面的兆声波能量的反射。 优选地，兆声波换能器与第二坦克侧壁相对，第一坦克侧壁与第二坦克侧壁相对，并且防反射机构邻近第二坦克侧壁设置。 作为示例，防反射机构可以包括气泡流，多个消声结构或两个气泡和消声结构的组合。
-
-
-
-
-
-
-
-
-
搜索结果
24 条记录 (耗时 0.024 秒)
