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Patent Agency Ranking
1.发明申请公开(公告)号：US20140322903A1
公开(公告)日：2014-10-30
申请号：US14331092
申请日：2014-07-14
Applicant: Entegris, Inc.
Inventor： James J. Mayer , Richard S. Ray , Robert Kaim , Joseph D. Sweeney
IPC: H01L21/265
CPC classification number: H01L21/2658 , C09K3/00 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/26506 , H01L21/302
Abstract: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.
Abstract translation: 公开了同位素富集的硅前体组合物，用于离子注入以提高离子注入系统的性能，与相对于缺乏硅前体组合物的同位素富集的离子注入相关。 所述硅掺杂剂组合物包括在28Si，29Si和30Si中的至少一种中同位素富集的至少一种硅化合物，并且可以包括包括共同种类气体和稀释气体中的至少一种的补充气体。 描述了用于将离子注入机提供这种硅掺杂剂组合物的掺杂气体供应装置，以及包括这种掺杂剂气体供应装置的离子注入系统。
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2.发明授权公开(公告)号：US11062906B2
公开(公告)日：2021-07-13
申请号：US14912380
申请日：2014-08-14
Applicant: Entegris, Inc.
Inventor： Ying Tang , Joseph D. Sweeney , Tianniu Chen , James J. Mayer , Richard S. Ray , Oleg Byl , Sharad N. Yedave , Robert Kaim
IPC: H01L21/265 , H01J37/317 , H01J37/32
Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.
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3.发明授权公开(公告)号：US09171725B2
公开(公告)日：2015-10-27
申请号：US14331092
申请日：2014-07-14
Applicant: Entegris, Inc.
Inventor： James J. Mayer , Richard S. Ray , Robert Kaim , Joseph D. Sweeney
IPC: H01L21/265 , H01L21/302 , H01J37/08 , H01J37/317
CPC classification number: H01L21/2658 , C09K3/00 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/26506 , H01L21/302
Abstract: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.
Abstract translation: 公开了同位素富集的硅前体组合物，用于离子注入以提高离子注入系统的性能，与相对于缺乏硅前体组合物的同位素富集的离子注入相关。 所述硅掺杂剂组合物包括在28Si，29Si和30Si中的至少一种中同位素富集的至少一种硅化合物，并且可以包括包括共同种类气体和稀释气体中的至少一种的补充气体。 描述了用于将离子注入机提供这种硅掺杂剂组合物的掺杂气体供应装置，以及包括这种掺杂剂气体供应装置的离子注入系统。
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4.发明申请SILICON IMPLANTATION IN SUBSTRATES AND PROVISION OF SILICON PRECURSOR COMPOSITIONS THEREFOR 审中-公开衬底中的硅植入物及其中的硅前驱体组合物的制备公开(公告)号：US20160211137A1
公开(公告)日：2016-07-21
申请号：US14912380
申请日：2014-08-14
Applicant: ENTEGRIS, INC.
Inventor： Ying Tang , Joseph D. Sweeney , Tianniu Chen , James J. Mayer , Richard S. Ray , Oleg Byl , Sharad N. Yedave , Robert Kaim
IPC: H01L21/265 , H01J37/317
CPC classification number: H01L21/265 , H01J37/3171 , H01J37/32412 , H01J2237/006 , H01J2237/08 , H01L21/26506 , H01L21/26546
Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.
Abstract translation: 描述了用于在衬底中注入硅和/或硅离子的组合物，系统和方法，包括从相应的硅前体组合物产生硅和/或硅离子，以及在衬底中注入硅和/或硅离子。
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5.发明申请公开(公告)号：US20160046849A1
公开(公告)日：2016-02-18
申请号：US14924221
申请日：2015-10-27
Applicant: Entegris, Inc.
Inventor： James J. Mayer , Richard S. Ray , Robert Kaim , Joseph D. Sweeney
IPC: C09K3/00
CPC classification number: H01L21/2658 , C09K3/00 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/26506 , H01L21/302
Abstract: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.
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