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公开(公告)号：US06633032B2
公开(公告)日：2003-10-14
申请号：US09727014
申请日：2000-11-30
申请人： Erik Cho Houge , John Martin McIntosh , Fred Anthony Stevie , Steven Barry Valle , Catherine Vartuli
发明人： Erik Cho Houge , John Martin McIntosh , Fred Anthony Stevie , Steven Barry Valle , Catherine Vartuli
IPC分类号： B01D5944
CPC分类号： H01J49/04
摘要： The present invention relates to a device for testing particles for composition and concentration. The device includes a particle counter, a collector screen, and a mass spectrometer. In one embodiment, the collector screen is positioned to receive particles received by the particle counter, and the mass spectrometer is positioned to receive counted particles retained on the collector screen.
摘要翻译： 本发明涉及用于测试用于组成和浓缩的颗粒的装置。 该装置包括颗粒计数器，收集器屏幕和质谱仪。 在一个实施例中，收集器屏幕定位成接收由颗粒计数器接收的颗粒，并且质谱仪被定位成接收保留在收集器屏幕上的计数颗粒。
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公开(公告)号：US06750447B2
公开(公告)日：2004-06-15
申请号：US10122645
申请日：2002-04-12
IPC分类号： G12B1300
CPC分类号： G01N23/04 , G01N2001/2893 , H01J37/265 , H01J2237/2826
摘要： A method and apparatus used to calibrate high-resolution electron microscopes where a single standard provides multiple samples, each having a different atomic structure, permits rapid accurate calibration of the entire range of magnifications. The different atomic structure dimensions possess known reference measurement data. The S/TEM is adjusted to focus onto the crystal lattice structure of each sample in a selected sequence. Measurements of these lattice spacings are compared to known dimensions. If S/TEM measurements do not agree with the lattice spacing dimensions, the S/TEM magnification is adjusted to reflect known dimensions. Typical standard exchange and associated processing steps are eliminated by the use of the single standard comprising of a plurality of samples.
摘要翻译： 用于校准高分辨率电子显微镜的方法和装置，其中单个标准提供多个样品，每个样品具有不同的原子结构，允许快速精确校准整个放大倍数。 不同的原子结构尺寸具有已知的参考测量数据。 调整S / TEM以选择的顺序聚焦到每个样品的晶格结构上。 将这些晶格间距的测量与已知尺寸进行比较。 如果S / TEM测量与晶格间距尺寸不一致，则调整S / TEM放大倍率以反映已知尺寸。 通过使用包含多个样品的单一标准来消除典型的标准交换和相关处理步骤。
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公开(公告)号：US06569690B1
公开(公告)日：2003-05-27
申请号：US09653364
申请日：2000-08-31
申请人： Erik Cho Houge , Isik C. Kizilyalli , John Martin McIntosh , Fred Anthony Stevie , Catherine Vartuli
发明人： Erik Cho Houge , Isik C. Kizilyalli , John Martin McIntosh , Fred Anthony Stevie , Catherine Vartuli
IPC分类号： H01L2100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/04
摘要： Method for fabricating a structure. According to an exemplary embodiment, a structure is made by forming a layer of removable material with a first surface spaced a part from a second surface. The first surface is formed along a first region from which the material is removable. The first surface is altered by removal of material from the layer. Removed material from the first surface is monitored to detect fluctuations in a variable of composition in the layer, and removal of material from the first surface is terminated when the composition of monitored material meets a predetermined criterion. In an alternate embodiment a variable characteristic is imparted to a layer of material as a function of layer thickness and an operation is performed on the layer resulting in removal of material. Samples of removed material are monitored for variation in the characteristic and the operation is modified when a variation conforms with a criterion.
摘要翻译： 制造结构的方法。 根据示例性实施例，通过形成具有与第二表面间隔一部分的第一表面的可移除材料层来制造结构。 第一表面沿着第一区域形成，材料可从该第一区域移除。 通过从层中去除材料来改变第一表面。 监测来自第一表面的去除材料以检测该层中组成变量的波动，并且当所监测材料的组成符合预定标准时，从第一表面去除材料终止。 在替代实施例中，可变特性被赋予作为层厚度的函数的材料层，并且在层上进行操作，导致材料的去除。 监测去除材料的样品的特性变化，并且当变化符合标准时修改操作。
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4.发明授权Abnormal photoresist line/space profile detection through signal processing of metrology waveform 有权通过信号处理计量波形的异常光刻胶线/空间轮廓检测公开(公告)号：US06708574B2
公开(公告)日：2004-03-23
申请号：US10156242
申请日：2002-05-24
IPC分类号： G01M1900
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor manufacturing automation method for analyzing a patterned feature formed on a semiconductor layer is disclosed. At least one patterned feature is scanned to generate an amplitude modulated waveform signal of the line and neighboring space characteristics. Signal processing is automatically performed on this waveform by an in-line computational source to extract known patterned features based on the profile of the amplitude modulated waveform signal. The extracted waveform segments are subjected to known geometric shapes to determine if the waveform indicates a normal or abnormal patterned feature on a semiconductor layer.
摘要翻译： 公开了一种用于分析形成在半导体层上的图案特征的半导体制造自动化方法。 扫描至少一个图案化特征以产生线和相邻空间特征的幅度调制波形信号。 通过在线计算源自动对该波形执行信号处理，以基于幅度调制波形信号的轮廓来提取已知的图案特征。 提取的波形段经历已知的几何形状以确定波形是否指示半导体层上的正常或异常图案化特征。
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公开(公告)号：US06606371B2
公开(公告)日：2003-08-12
申请号：US09745236
申请日：2000-12-19
IPC分类号： G21K106
CPC分类号： G21K1/06 , G21K2201/062 , G21K2201/064 , G21K2201/067
摘要： A reflective lens with at least one curved surface formed of polycrystalline material. In one embodiment, a lens structure includes a substrate having a surface of predetermined curvature and a film formed along a surface of the substrate with multiple individual members each having at least one similar orientation relative to the portion of the substrate surface adjacent the member such that collectively the members provide predictable angles for diffraction of x-rays generated from a common source. A system is also provided for performing an operation with x-rays. In one embodiment, a system includes a source for generating the x-rays, a polycrystalline surface region having crystal spacing suitable for reflecting a plurality of x-rays at the same Bragg angle along the region, and transmitting the reflected x-rays to a reference position. An associated method includes providing x-rays to polycrystalline surface region having crystal spacings suitable for reflecting a plurality of x-rays at the same Bragg angle along the region, transmitting the reflected x-rays to a reference position and positioning a sample between the surface region and the reference position so that the x-rays are transmitted through the sample.
摘要翻译： 具有由多晶材料形成的至少一个曲面的反射透镜。 在一个实施例中，透镜结构包括具有预定曲率的表面的基底和沿着基底的表面形成的膜，多个单独的构件各自具有相对于邻近构件的基底表面的部分的至少一个相似的取向，使得 共同地，这些构件为从公共源产生的x射线的衍射提供可预测的角度。 还提供了一种用于使用X射线进行操作的系统。 在一个实施例中，系统包括用于产生x射线的源，具有适合于沿着该区域以相同的布拉格角反射多个x射线的晶体间距的多晶表面区域，以及将反射的x射线透射到 参考位置。 相关联的方法包括向具有晶体间距的多晶表面区域提供x射线，该晶体间距适于沿着该区域以相同的布拉格角反射多个x射线，将反射的x射线透射到参考位置，并将样品定位在表面 区域和参考位置，使得x射线透射通过样品。
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公开(公告)号：US06714892B2
公开(公告)日：2004-03-30
申请号：US09967119
申请日：2001-09-28
IPC分类号： G06F1500
CPC分类号： G03F7/70491 , G03F7/70625 , Y10S977/852
摘要： A system and method of metrology (10) whereby a three dimensional shape profile is defined (16) for a surface feature on a substrate by applying (38) a transform function F(x) to an image intensity map I(x,y) obtained (40) by inspecting the substrate with a scanning electron microscope (12). The transform function F(x) is developed (34) by correlating the image intensity map of a first wafer (18) to a height vector (32) obtained by inspecting the first wafer with a more accurate metrology tool, for example a stylus nanoprofilometer (14). A simple ratio-based transform may be used to develop F(x). An asymmetric multiple parameter characterization of the three dimensional shape profile may be developed (74) by plotting critical space and width dimensions (SL, SR, W1, WR) from a vertical axis (C—C) as a function of height of the feature.
摘要翻译： 一种计量系统和方法（10），其中通过将变换函数F（x）应用于图像强度图I（x，y）（38）来定义（16）用于衬底上的表面特征的三维形状轮廓， 通过用扫描电子显微镜（12）检查基板得到（40）。 通过将第一晶片（18）的图像强度图与通过用更精确的计量工具检查第一晶片获得的高度矢量（32）相关联来开发变换函数F（x），例如，触笔纳米玻璃体计 （14）。 可以使用简单的基于比例的变换来开发F（x）。 可以通过从垂直轴（C-C）绘制关键空间和宽度尺寸（SL，SR，W1，WR）作为特征的高度的函数来开发三维形状轮廓的不对称多参数表征（74）。
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公开(公告)号：US06641746B2
公开(公告)日：2003-11-04
申请号：US09967435
申请日：2001-09-28
IPC分类号： H01L2100
CPC分类号： H01J37/32935 , G05B2219/32335 , G05B2219/45031 , H01J37/3299
摘要： An integrated metrology and lithography/etch system and method (10) for micro-electronics device manufacturing. A process control neural network (30) is used to develop an estimated process control parameter (32) for controlling an etching process (28). The process control neural network is responsive to a multi-parameter characterization of a patterned resist feature MPC(PR) (16) developed on a substrate. The process control parameter is used as a feed-forward control for the etching process to develop an actual final mask feature. A multi-parameter characterization of the actual final mask feature MPC(HM) (36) is used as an input to a training neural network (40) for mapping to an ideal process control parameter. The ideal process control parameter is compared to the estimated control parameter to develop an error parameter (46), which is then used to train the process control neural network.
摘要翻译： 用于微电子器件制造的综合测量和光刻/蚀刻系统和方法（10）。 过程控制神经网络（30）用于开发用于控制蚀刻过程（28）的估计过程控制参数（32）。 过程控制神经网络响应于在衬底上显影的图案化抗蚀剂特征MPC（PR）（16）的多参数表征。 过程控制参数用作蚀刻过程的前馈控制以开发实际的最终掩模特征。 使用实际最终掩模特征MPC（HM）（36）的多参数表征作为训练神经网络（40）的输入，用于映射到理想的过程控制参数。 将理想的过程控制参数与估计的控制参数进行比较，以开发误差参数（46），然后将其用于训练过程控制神经网络。
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公开(公告)号：US06651226B2
公开(公告)日：2003-11-18
申请号：US09967114
申请日：2001-09-28
IPC分类号： G06F1750
CPC分类号： G03F7/70491 , G03F7/70625
摘要： In-line process control for 120 nm and 100 nm lithography using the installed scanning electron microscope (SEM) equipment base. A virtual three-dimensional representation of a photoresist feature is developed by applying a transform function to SEM intensity data representing the feature. The transform function correlates highly accurate height vector data, such as provided by a stylus nanoprofilometer or scatterometer, with the highly precise intensity data from the SEM. A multiple parameter characterization of at least one critical dimension of the virtual feature is compared to an acceptance pattern template, with the results being used to control a downstream etch process or an upstream lithography process. A multiple parameter characteristic of a three dimensional representation of the resulting post-etch final feature may be compared to device performance data to further refine the acceptance pattern template.
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9.发明授权Scanning electron microscope system and method of manufacturing an integrated circuit 失效扫描电子显微镜系统及集成电路制造方法公开(公告)号：US06556703B1
公开(公告)日：2003-04-29
申请号：US08957122
申请日：1997-10-24
IPC分类号： G06K900
CPC分类号： G01N23/2251
摘要： A method and system for analyzing a substrate including the step of scanning the substrate to produce an intensity signal which represents the topography of the wafer to a first order. Other contributions to the signal intensity may be chemical composition and electrical state of the scanned features on the substrate. The scanned signal is compared and correlated to a reference signal to assess the substrate. The present invention is also directed to a method of manufacturing a wafer using the method and system and improving the manufacturing quality of product.
摘要翻译： 一种用于分析衬底的方法和系统，包括扫描衬底以产生表示第一级的晶片的形貌的强度信号的步骤。 对信号强度的其他贡献可以是衬底上扫描特征的化学组成和电状态。 将扫描的信号与参考信号进行比较并相关以评估底物。 本发明还涉及使用该方法和系统制造晶片的方法并提高产品的制造质量。
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公开(公告)号：US06985229B2
公开(公告)日：2006-01-10
申请号：US10158775
申请日：2002-05-30
申请人： Cynthia C. Lee , Stephen Arlon Meisner , Thomas Michael Wolf , Alberto Santoni , John Martin McIntosh
发明人： Cynthia C. Lee , Stephen Arlon Meisner , Thomas Michael Wolf , Alberto Santoni , John Martin McIntosh
CPC分类号： G03F7/70633 , G01B11/272
摘要： A method for nondestructively characterizing alignment overlay between two layers of a semiconductor wafer. An incident beam of radiation is directed upon the wafer surface and the properties of the resulting diffracted beam are determined, in one embodiment as a function of wavelength or incident angle. The spectrally or angularly resolved characteristics of the diffracted beam are related to the alignment of the overlay features. A library of calculated diffraction spectra is established by modeling a full range of expected variations in overlay alignment. The spectra resulting from the inspection of an actual wafer having alignment targets in at least two layers is compared against the library to identify a best fit to characterize the actual alignment. The results of the comparison may be used as an input for upstream and/or downstream process control.
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