公开(公告)号：US20170219776A1

公开(公告)日：2017-08-03

申请号：US15419694

申请日：2017-01-30

申请人： Erman Timurdogan ,  Michael R. Watts ,  Zhan Su ,  Ehsan Shah Hosseini ,  Jie Sun

发明人： Erman Timurdogan ,  Michael R. Watts ,  Zhan Su ,  Ehsan Shah Hosseini ,  Jie Sun

IPC分类号： G02B6/293 ,  H01L31/105 ,  G02B6/122

CPC分类号： G02B6/29338 ,  G02B6/122 ,  G02B6/29395 ,  G02B2006/12061 ,  G02B2006/12123 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/1055 ,  Y02E10/50

摘要： A photodetector includes a germanium layer evanescently coupled to a ring resonator. The ring resonator increases the interaction length between light guided by the ring resonator and the germanium layer without increasing the size of the photodetector, thereby keeping the photodetector's dark current at a low level. The germanium layer absorbs the guided light and converts the absorbed light into electrical signals for detection. The increased interaction length in the resonator allows efficient transfer of light from the resonator to the germanium layer via evanescently coupling. In addition, the internal and external quality factors (Q) of the ring resonator can be matched to achieve (nearly) full absorption of light in the germanium with high quantum efficiency.

公开(公告)号：US09939586B2

公开(公告)日：2018-04-10

申请号：US15419694

申请日：2017-01-30

申请人： Erman Timurdogan ,  Michael R. Watts ,  Zhan Su ,  Ehsan Shah Hosseini ,  Jie Sun

发明人： Erman Timurdogan ,  Michael R. Watts ,  Zhan Su ,  Ehsan Shah Hosseini ,  Jie Sun

IPC分类号： G02B6/12 ,  G02B6/293 ,  G02B6/122 ,  H01L31/105 ,  H01L31/0352

CPC分类号： G02B6/29338 ,  G02B6/122 ,  G02B6/29395 ,  G02B2006/12061 ,  G02B2006/12123 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/1055 ,  Y02E10/50

摘要： A photodetector includes a germanium layer evanescently coupled to a ring resonator. The ring resonator increases the interaction length between light guided by the ring resonator and the germanium layer without increasing the size of the photodetector, thereby keeping the photodetector's dark current at a low level. The germanium layer absorbs the guided light and converts the absorbed light into electrical signals for detection. The increased interaction length in the resonator allows efficient transfer of light from the resonator to the germanium layer via evanescently coupling. In addition, the internal and external quality factors (Q) of the ring resonator can be matched to achieve (nearly) full absorption of light in the germanium with high quantum efficiency.

公开(公告)号：US20180131155A1

公开(公告)日：2018-05-10

申请号：US15718045

申请日：2017-09-28

申请人： Purnawirman Purnawirman ,  Michael R. Watts ,  Ehsan Shah Hosseini ,  Jonathan B. Bradley ,  Jie Sun ,  Matteo Cherchi

发明人： Purnawirman Purnawirman ,  Michael R. Watts ,  Ehsan Shah Hosseini ,  Jonathan B. Bradley ,  Jie Sun ,  Matteo Cherchi

IPC分类号： H01S3/063 ,  H01S3/16 ,  H01S3/091 ,  H01S3/17 ,  H01S3/08 ,  H01S3/083 ,  H01S3/094 ,  H01S3/23 ,  H01S3/105

CPC分类号： H01S3/0632 ,  H01S3/0635 ,  H01S3/0637 ,  H01S3/08059 ,  H01S3/083 ,  H01S3/091 ,  H01S3/094096 ,  H01S3/1053 ,  H01S3/1608 ,  H01S3/1636 ,  H01S3/17 ,  H01S3/2308

摘要： Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

公开(公告)号：US09325140B2

公开(公告)日：2016-04-26

申请号：US14200427

申请日：2014-03-07

申请人： Purnawirman Purnawirman ,  Michael R. Watts ,  Ehsan Shah Hosseini ,  Jonathan D. B. Bradley ,  Jie Sun ,  Matteo Cherchi

发明人： Purnawirman Purnawirman ,  Michael R. Watts ,  Ehsan Shah Hosseini ,  Jonathan D. B. Bradley ,  Jie Sun ,  Matteo Cherchi

IPC分类号： H01S3/063 ,  H01S3/17 ,  H01S3/08 ,  H01S3/083 ,  H01S3/094 ,  H01S3/16 ,  H01S3/23 ,  H01S3/105

CPC分类号： H01S3/0632 ,  H01S3/0635 ,  H01S3/08059 ,  H01S3/083 ,  H01S3/091 ,  H01S3/094096 ,  H01S3/1053 ,  H01S3/1608 ,  H01S3/1636 ,  H01S3/17 ,  H01S3/2308

摘要： Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

摘要翻译： 本发明的实例包括为硅光子系统设计的集成铒掺杂波导激光器。 在一些示例中，这些激光器包括由在氮化硅基波导中形成的分布式布拉格反射器（DBR）限定的激光腔。 这些DBR可以包括由晶片级浸没式光刻术定义的光栅特征，其中沉积有掺杂铒的氧化铝的上层作为制造过程的最后步骤。 所产生的倒脊波导与980nm泵（89％）和1.5μm激光（87％）波长的激光介质产生高的光强度重叠，泵激光强度重叠率超过93％。 输出功率可以为5mW或更高，并且在铒增益光谱（1536,1561和1596nm）的C波段和L波段内的宽间隔波长处显示激光。

公开(公告)号：US09806485B2

公开(公告)日：2017-10-31

申请号：US15052809

申请日：2016-02-24

申请人： Purnawirman Purnawirman ,  Michael R. Watts ,  Ehsan Shah Hosseini ,  Jonathan B. Bradley ,  Jie Sun ,  Matteo Cherchi

发明人： Purnawirman Purnawirman ,  Michael R. Watts ,  Ehsan Shah Hosseini ,  Jonathan B. Bradley ,  Jie Sun ,  Matteo Cherchi

IPC分类号： H01S3/063 ,  H01S3/16 ,  H01S3/17 ,  H01S3/091 ,  H01S3/08 ,  H01S3/083 ,  H01S3/094 ,  H01S3/23 ,  H01S3/105

CPC分类号： H01S3/0632 ,  H01S3/0635 ,  H01S3/08059 ,  H01S3/083 ,  H01S3/091 ,  H01S3/094096 ,  H01S3/1053 ,  H01S3/1608 ,  H01S3/1636 ,  H01S3/17 ,  H01S3/2308

摘要： Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

公开(公告)号：US20160248216A1

公开(公告)日：2016-08-25

申请号：US15052809

申请日：2016-02-24

申请人： Purnawirman Purnawirman ,  Michael R. Watts ,  Ehsan Shah Hosseini ,  Jonathan B. Bradley ,  Jie Sun ,  Matteo Cherchi

发明人： Purnawirman Purnawirman ,  Michael R. Watts ,  Ehsan Shah Hosseini ,  Jonathan B. Bradley ,  Jie Sun ,  Matteo Cherchi

IPC分类号： H01S3/063 ,  H01S3/091 ,  H01S3/16

CPC分类号： H01S3/0632 ,  H01S3/0635 ,  H01S3/08059 ,  H01S3/083 ,  H01S3/091 ,  H01S3/094096 ,  H01S3/1053 ,  H01S3/1608 ,  H01S3/1636 ,  H01S3/17 ,  H01S3/2308

摘要： Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

摘要翻译： 本发明的实例包括为硅光子系统设计的集成铒掺杂波导激光器。 在一些示例中，这些激光器包括由在氮化硅基波导中形成的分布式布拉格反射器（DBR）限定的激光腔。 这些DBR可以包括由晶片级浸没式光刻术定义的光栅特征，其中沉积有掺杂铒的氧化铝的上层作为制造过程的最后步骤。 所产生的倒脊波导与980nm泵（89％）和1.5μm激光（87％）波长的活性介质产生高的光强度重叠，泵激光强度重叠率超过93％。 输出功率可以为5mW或更高，并且在铒增益光谱（1536,1561和1596nm）的C波段和L波段内的宽间隔波长处显示激光。