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公开(公告)号:US20170219776A1
公开(公告)日:2017-08-03
申请号:US15419694
申请日:2017-01-30
申请人: Erman Timurdogan , Michael R. Watts , Zhan Su , Ehsan Shah Hosseini , Jie Sun
发明人: Erman Timurdogan , Michael R. Watts , Zhan Su , Ehsan Shah Hosseini , Jie Sun
IPC分类号: G02B6/293 , H01L31/105 , G02B6/122
CPC分类号: G02B6/29338 , G02B6/122 , G02B6/29395 , G02B2006/12061 , G02B2006/12123 , H01L31/035281 , H01L31/105 , H01L31/1055 , Y02E10/50
摘要: A photodetector includes a germanium layer evanescently coupled to a ring resonator. The ring resonator increases the interaction length between light guided by the ring resonator and the germanium layer without increasing the size of the photodetector, thereby keeping the photodetector's dark current at a low level. The germanium layer absorbs the guided light and converts the absorbed light into electrical signals for detection. The increased interaction length in the resonator allows efficient transfer of light from the resonator to the germanium layer via evanescently coupling. In addition, the internal and external quality factors (Q) of the ring resonator can be matched to achieve (nearly) full absorption of light in the germanium with high quantum efficiency.
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公开(公告)号:US09939586B2
公开(公告)日:2018-04-10
申请号:US15419694
申请日:2017-01-30
申请人: Erman Timurdogan , Michael R. Watts , Zhan Su , Ehsan Shah Hosseini , Jie Sun
发明人: Erman Timurdogan , Michael R. Watts , Zhan Su , Ehsan Shah Hosseini , Jie Sun
IPC分类号: G02B6/12 , G02B6/293 , G02B6/122 , H01L31/105 , H01L31/0352
CPC分类号: G02B6/29338 , G02B6/122 , G02B6/29395 , G02B2006/12061 , G02B2006/12123 , H01L31/035281 , H01L31/105 , H01L31/1055 , Y02E10/50
摘要: A photodetector includes a germanium layer evanescently coupled to a ring resonator. The ring resonator increases the interaction length between light guided by the ring resonator and the germanium layer without increasing the size of the photodetector, thereby keeping the photodetector's dark current at a low level. The germanium layer absorbs the guided light and converts the absorbed light into electrical signals for detection. The increased interaction length in the resonator allows efficient transfer of light from the resonator to the germanium layer via evanescently coupling. In addition, the internal and external quality factors (Q) of the ring resonator can be matched to achieve (nearly) full absorption of light in the germanium with high quantum efficiency.
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公开(公告)号:US20180131155A1
公开(公告)日:2018-05-10
申请号:US15718045
申请日:2017-09-28
申请人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan B. Bradley , Jie Sun , Matteo Cherchi
发明人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan B. Bradley , Jie Sun , Matteo Cherchi
IPC分类号: H01S3/063 , H01S3/16 , H01S3/091 , H01S3/17 , H01S3/08 , H01S3/083 , H01S3/094 , H01S3/23 , H01S3/105
CPC分类号: H01S3/0632 , H01S3/0635 , H01S3/0637 , H01S3/08059 , H01S3/083 , H01S3/091 , H01S3/094096 , H01S3/1053 , H01S3/1608 , H01S3/1636 , H01S3/17 , H01S3/2308
摘要: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).
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4.
公开(公告)号:US09325140B2
公开(公告)日:2016-04-26
申请号:US14200427
申请日:2014-03-07
申请人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan D. B. Bradley , Jie Sun , Matteo Cherchi
发明人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan D. B. Bradley , Jie Sun , Matteo Cherchi
CPC分类号: H01S3/0632 , H01S3/0635 , H01S3/08059 , H01S3/083 , H01S3/091 , H01S3/094096 , H01S3/1053 , H01S3/1608 , H01S3/1636 , H01S3/17 , H01S3/2308
摘要: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).
摘要翻译: 本发明的实例包括为硅光子系统设计的集成铒掺杂波导激光器。 在一些示例中,这些激光器包括由在氮化硅基波导中形成的分布式布拉格反射器(DBR)限定的激光腔。 这些DBR可以包括由晶片级浸没式光刻术定义的光栅特征,其中沉积有掺杂铒的氧化铝的上层作为制造过程的最后步骤。 所产生的倒脊波导与980nm泵(89%)和1.5μm激光(87%)波长的激光介质产生高的光强度重叠,泵激光强度重叠率超过93%。 输出功率可以为5mW或更高,并且在铒增益光谱(1536,1561和1596nm)的C波段和L波段内的宽间隔波长处显示激光。
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公开(公告)号:US09806485B2
公开(公告)日:2017-10-31
申请号:US15052809
申请日:2016-02-24
申请人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan B. Bradley , Jie Sun , Matteo Cherchi
发明人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan B. Bradley , Jie Sun , Matteo Cherchi
IPC分类号: H01S3/063 , H01S3/16 , H01S3/17 , H01S3/091 , H01S3/08 , H01S3/083 , H01S3/094 , H01S3/23 , H01S3/105
CPC分类号: H01S3/0632 , H01S3/0635 , H01S3/08059 , H01S3/083 , H01S3/091 , H01S3/094096 , H01S3/1053 , H01S3/1608 , H01S3/1636 , H01S3/17 , H01S3/2308
摘要: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).
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6.
公开(公告)号:US20160248216A1
公开(公告)日:2016-08-25
申请号:US15052809
申请日:2016-02-24
申请人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan B. Bradley , Jie Sun , Matteo Cherchi
发明人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan B. Bradley , Jie Sun , Matteo Cherchi
CPC分类号: H01S3/0632 , H01S3/0635 , H01S3/08059 , H01S3/083 , H01S3/091 , H01S3/094096 , H01S3/1053 , H01S3/1608 , H01S3/1636 , H01S3/17 , H01S3/2308
摘要: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).
摘要翻译: 本发明的实例包括为硅光子系统设计的集成铒掺杂波导激光器。 在一些示例中,这些激光器包括由在氮化硅基波导中形成的分布式布拉格反射器(DBR)限定的激光腔。 这些DBR可以包括由晶片级浸没式光刻术定义的光栅特征,其中沉积有掺杂铒的氧化铝的上层作为制造过程的最后步骤。 所产生的倒脊波导与980nm泵(89%)和1.5μm激光(87%)波长的活性介质产生高的光强度重叠,泵激光强度重叠率超过93%。 输出功率可以为5mW或更高,并且在铒增益光谱(1536,1561和1596nm)的C波段和L波段内的宽间隔波长处显示激光。
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公开(公告)号:US08988754B2
公开(公告)日:2015-03-24
申请号:US14149099
申请日:2014-01-07
申请人: Jie Sun , Michael R. Watts , Ami Yaacobi , Erman Timurdogan
发明人: Jie Sun , Michael R. Watts , Ami Yaacobi , Erman Timurdogan
CPC分类号: G02F1/218 , G02B6/12033 , G02B6/26 , G02B6/29343 , G02B6/3546 , G02B6/3576 , G02F1/0147 , G02F1/2955
摘要: An optical phased array formed of a large number of nanophotonic antenna elements can be used to project complex images into the far field. These nanophotonic phased arrays, including the nanophotonic antenna elements and waveguides, can be formed on a single chip of silicon using complementary metal-oxide-semiconductor (CMOS) processes. Directional couplers evanescently couple light from the waveguides to the nanophotonic antenna elements, which emit the light as beams with phases and amplitudes selected so that the emitted beams interfere in the far field to produce the desired pattern. In some cases, each antenna in the phased array may be optically coupled to a corresponding variable delay line, such as a thermo-optically tuned waveguide or a liquid-filled cell, which can be used to vary the phase of the antenna's output (and the resulting far-field interference pattern).
摘要翻译: 可以使用由大量纳米光子天线元件形成的光学相控阵来将复杂图像投影到远场中。 这些纳米光子相控阵列,包括纳米光子学天线元件和波导,可以使用互补金属氧化物半导体(CMOS)工艺在单个硅芯片上形成。 定向耦合器渐逝地将来自波导的光耦合到纳米光子天线元件,其将光发射为具有相位和幅度的光束,使得发射的光束在远场中干涉以产生期望的图案。 在一些情况下,相控阵列中的每个天线可以光耦合到相应的可变延迟线,例如热光调谐波导或液体填充单元,其可以用于改变天线输出的相位(和 产生的远场干扰图)。
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公开(公告)号:US20170146887A1
公开(公告)日:2017-05-25
申请号:US15359149
申请日:2016-11-22
申请人: Erman Timurdogan , Michael R. Watts
发明人: Erman Timurdogan , Michael R. Watts
CPC分类号: G02F1/365 , G02B6/122 , G02B2006/12061 , G02F1/3534 , G02F1/3544 , G02F1/3556 , G02F1/377 , G02F2001/3548
摘要: A waveguide includes an array of p-i-n junctions formed by ions implanted into the waveguide. The p-i-n junctions concentrate electric fields applied on the waveguide to convert the third order susceptibility χ(3) into the second order susceptibility χ(2) and induce the DC Kerr effect. The periodic electrical fields concentrated by the p-i-n junctions effectively create a wave vector, which together with the wave vectors of optical beams in the waveguide satisfies phase matching conditions for nonlinear optical effects. The phase matching can significantly enhance the efficiency of the nonlinear optical effects, such as second harmonic generation, sum frequency generation, difference frequency generation, and four-wave mixing. Waveguides with arrays of PIN junctions can also be used in phase modulators, amplitude modulators, and filters.
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公开(公告)号:US20170214472A1
公开(公告)日:2017-07-27
申请号:US15148789
申请日:2016-05-06
申请人: David O. Caplan , Michael R. Watts , Zhan Su
发明人: David O. Caplan , Michael R. Watts , Zhan Su
CPC分类号: H04B10/677 , G02B6/12007 , G02B6/28 , G02B6/2938 , G02B6/29395 , G02F1/011 , G02F1/0147 , G02F2201/16 , G02F2203/055 , G02F2203/15 , G02F2203/58 , G02F2203/585 , H04B10/2575 , H04B10/61 , H04B10/66 , H04B10/67 , H04B10/671 , H04J14/02
摘要: An optical receiver includes a cascade of optical filtering elements, each of which selects spectral components from incoming optical signals at a wavelengths aligned to filter passbands. The selected spectral components may be optically combined to form k pairs of intermediary signals, where k=log2(M). By comparing the k pairs of intermediary signals, k bits of a digital signal representing the incident signal may be generated. The filtering elements may be configured to perform demultiplexing and demodulation simultaneously, increasing functionality and reducing excess losses. The filtering elements may also be tuned so that the optical receiver may be reconfigured to accommodate different combinations of wavelengths and modulation formats, such as wavelength division multiplexed (WDM) on off keying (OOK), M-ary orthogonal formats including frequency shift keying (FSK) and pulse position modulation (PPM), differential phase shift keying, and hybrid combinations—providing rate and format flexibility and WDM scalability.
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10.
公开(公告)号:US20140269800A1
公开(公告)日:2014-09-18
申请号:US14200427
申请日:2014-03-07
申请人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Sha Hosseini , Jonathan D. Bradley , Jie Sun , Matteo Cherchi
发明人: Purnawirman Purnawirman , Michael R. Watts , Ehsan Sha Hosseini , Jonathan D. Bradley , Jie Sun , Matteo Cherchi
CPC分类号: H01S3/0632 , H01S3/0635 , H01S3/08059 , H01S3/083 , H01S3/091 , H01S3/094096 , H01S3/1053 , H01S3/1608 , H01S3/1636 , H01S3/17 , H01S3/2308
摘要: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).
摘要翻译: 本发明的实例包括为硅光子系统设计的集成铒掺杂波导激光器。 在一些示例中,这些激光器包括由在氮化硅基波导中形成的分布式布拉格反射器(DBR)限定的激光腔。 这些DBR可以包括由晶片级浸没式光刻术定义的光栅特征,其中沉积有掺杂铒的氧化铝的上层作为制造过程的最后步骤。 所产生的倒脊波导与980nm泵(89%)和1.5μm激光(87%)波长的活性介质产生高的光强度重叠,泵激光强度重叠率超过93%。 输出功率可以为5mW或更高,并且在铒增益光谱(1536,1561和1596nm)的C波段和L波段内的宽间隔波长处显示激光。
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