PHOTONIC DEVICES AND METHODS OF USING AND MAKING PHOTONIC DEVICES
    6.
    发明申请
    PHOTONIC DEVICES AND METHODS OF USING AND MAKING PHOTONIC DEVICES 有权
    光电器件和使用和制造光电器件的方法

    公开(公告)号:US20160248216A1

    公开(公告)日:2016-08-25

    申请号:US15052809

    申请日:2016-02-24

    IPC分类号: H01S3/063 H01S3/091 H01S3/16

    摘要: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

    摘要翻译: 本发明的实例包括为硅光子系统设计的集成铒掺杂波导激光器。 在一些示例中,这些激光器包括由在氮化硅基波导中形成的分布式布拉格反射器(DBR)限定的激光腔。 这些DBR可以包括由晶片级浸没式光刻术定义的光栅特征,其中沉积有掺杂铒的氧化铝的上层作为制造过程的最后步骤。 所产生的倒脊波导与980nm泵(89%)和1.5μm激光(87%)波长的活性介质产生高的光强度重叠,泵激光强度重叠率超过93%。 输出功率可以为5mW或更高,并且在铒增益光谱(1536,1561和1596nm)的C波段和L波段内的宽间隔波长处显示激光。

    Optical phased arrays with evanescently-coupled antennas
    7.
    发明授权
    Optical phased arrays with evanescently-coupled antennas 有权
    具有ev逝耦合天线的光相控阵列

    公开(公告)号:US08988754B2

    公开(公告)日:2015-03-24

    申请号:US14149099

    申请日:2014-01-07

    摘要: An optical phased array formed of a large number of nanophotonic antenna elements can be used to project complex images into the far field. These nanophotonic phased arrays, including the nanophotonic antenna elements and waveguides, can be formed on a single chip of silicon using complementary metal-oxide-semiconductor (CMOS) processes. Directional couplers evanescently couple light from the waveguides to the nanophotonic antenna elements, which emit the light as beams with phases and amplitudes selected so that the emitted beams interfere in the far field to produce the desired pattern. In some cases, each antenna in the phased array may be optically coupled to a corresponding variable delay line, such as a thermo-optically tuned waveguide or a liquid-filled cell, which can be used to vary the phase of the antenna's output (and the resulting far-field interference pattern).

    摘要翻译: 可以使用由大量纳米光子天线元件形成的光学相控阵来将复杂图像投影到远场中。 这些纳米光子相控阵列,包括纳米光子学天线元件和波导,可以使用互补金属氧化物半导体(CMOS)工艺在单个硅芯片上形成。 定向耦合器渐逝地将来自波导的光耦合到纳米光子天线元件,其将光发射为具有相位和幅度的光束,使得发射的光束在远场中干涉以产生期望的图案。 在一些情况下,相控阵列中的每个天线可以光耦合到相应的可变延迟线,例如热光调谐波导或液体填充单元,其可以用于改变天线输出的相位(和 产生的远场干扰图)。

    PHOTONIC DEVICES AND METHODS OF USING AND MAKING PHOTONIC DEVICES
    10.
    发明申请
    PHOTONIC DEVICES AND METHODS OF USING AND MAKING PHOTONIC DEVICES 有权
    光电器件和使用和制造光电器件的方法

    公开(公告)号:US20140269800A1

    公开(公告)日:2014-09-18

    申请号:US14200427

    申请日:2014-03-07

    IPC分类号: H01S3/16 H01S5/10 H01S3/091

    摘要: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

    摘要翻译: 本发明的实例包括为硅光子系统设计的集成铒掺杂波导激光器。 在一些示例中,这些激光器包括由在氮化硅基波导中形成的分布式布拉格反射器(DBR)限定的激光腔。 这些DBR可以包括由晶片级浸没式光刻术定义的光栅特征,其中沉积有掺杂铒的氧化铝的上层作为制造过程的最后步骤。 所产生的倒脊波导与980nm泵(89%)和1.5μm激光(87%)波长的活性介质产生高的光强度重叠,泵激光强度重叠率超过93%。 输出功率可以为5mW或更高,并且在铒增益光谱(1536,1561和1596nm)的C波段和L波段内的宽间隔波长处显示激光。