公开(公告)号：US08618543B2

公开(公告)日：2013-12-31

申请号：US11978581

申请日：2007-10-30

申请人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

发明人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675

摘要： Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

摘要翻译： 提供了包括选择性晶化的沟道层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括栅极，沟道层，源极和漏极。 沟道层由氧化物半导体形成，并且与源极和漏极接触的沟道层的至少一部分结晶。 在制造TFT的方法中，沟道层由氧化物半导体形成，并且将金属成分注入到沟道层中，以便使与沟道层和漏极接触的沟道层的至少一部分结晶。 可以通过沉积和热处理金属层或通过离子注入将金属成分注入到沟道层中。

公开(公告)号：US20080258140A1

公开(公告)日：2008-10-23

申请号：US11978581

申请日：2007-10-30

申请人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

发明人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

IPC分类号： H01L29/04 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675

摘要： Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

摘要翻译： 提供了包括选择性晶化的沟道层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括栅极，沟道层，源极和漏极。 沟道层由氧化物半导体形成，并且与源极和漏极接触的沟道层的至少一部分结晶。 在制造TFT的方法中，沟道层由氧化物半导体形成，并且将金属成分注入到沟道层中，以便使与沟道层和漏极接触的沟道层的至少一部分结晶。 可以通过沉积和热处理金属层或通过离子注入将金属成分注入到沟道层中。

公开(公告)号：US20090008638A1

公开(公告)日：2009-01-08

申请号：US12078706

申请日：2008-04-03

申请人： Dong-hun Kang ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Eun-ha Lee ,  Jae-cheol Lee

发明人： Dong-hun Kang ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Eun-ha Lee ,  Jae-cheol Lee

IPC分类号： H01L29/12 ,  H01L21/336

CPC分类号： H01L29/7869

摘要： Example embodiments relate to an oxide semiconductor including zinc oxide (ZnO), a thin film transistor including a channel formed of the oxide semiconductor and a method of manufacturing the thin film transistor. The oxide semiconductor may include a GaxInyZnz oxide and at least one material selected from the group consisting of a 4A group element, a 4A group oxide, a rare earth element and combinations thereof.

摘要翻译： 示例性实施例涉及包括氧化锌（ZnO），包括由氧化物半导体形成的沟道的薄膜晶体管的氧化物半导体和制造薄膜晶体管的方法。 氧化物半导体可以包括GaxInyZnz氧化物和选自由4A族元素，4A族氧化物，稀土元素及其组合组成的组中的至少一种材料。

公开(公告)号：US20080093595A1

公开(公告)日：2008-04-24

申请号：US11976008

申请日：2007-10-19

申请人： I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Hyuck Lim

发明人： I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Hyuck Lim

IPC分类号： H01L29/24 ,  H01L21/34

CPC分类号： H01L27/0688 ,  G11C13/0023 ,  G11C2213/71 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/105 ,  H01L29/7869

摘要： A thin film transistor used as a selection transistor for a three-dimensional stacking cross point memory and a method of manufacturing the thin film transistor are provided. The thin film transistor includes a substrate, a gate, a gate insulation layer, a channel, a source and a drain. The gate may be formed on a portion of the substrate. The gate insulation layer may be formed on the substrate and the gate. The channel includes ZnO and may be formed on the gate insulation layer over the gate. The source and the drain contact sides of the channel.

摘要翻译： 提供了用作三维堆叠交叉点存储器的选择晶体管的薄膜晶体管和制造薄膜晶体管的方法。 薄膜晶体管包括衬底，栅极，栅极绝缘层，沟道，源极和漏极。 栅极可以形成在衬底的一部分上。 栅极绝缘层可以形成在衬底和栅极上。 通道包括ZnO，并且可以形成在栅极上的栅极绝缘层上。 通道的源极和漏极接触侧。

公开(公告)号：US07893431B2

公开(公告)日：2011-02-22

申请号：US11785269

申请日：2007-04-17

申请人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

发明人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC分类号： H01L29/12

CPC分类号： H01L29/7869

摘要： A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3)·y(In2O3)·z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦ about 3.15, and about 0.55≦y/z≦ about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

摘要翻译： 半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）·y（In 2 O 3）·z（ZnO）式1其中约0.75＆lt; 1E; x / z＆ 约3.15，约0.55＆nlE; y / z＆nlE; 约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US20090001432A1

公开(公告)日：2009-01-01

申请号：US12073102

申请日：2008-02-29

申请人： Sun-il Kim ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

发明人： Sun-il Kim ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

IPC分类号： H01L29/78 ,  H01L23/48 ,  H01L21/44 ,  H01L21/3205

CPC分类号： H01L29/7869

摘要： Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.

摘要翻译： 提供了一种用于薄膜晶体管的沟道层，薄膜晶体管及其形成方法。 用于薄膜晶体管的沟道层可以包括掺杂有过渡金属的IZO（氧化铟锌）。 薄膜晶体管可以包括栅电极和形成在衬底上的沟道层，形成在栅极和沟道层之间的栅极绝缘层，以及与沟道层的端部接触的源电极和漏电极。

公开(公告)号：US20080203387A1

公开(公告)日：2008-08-28

申请号：US12007038

申请日：2008-01-04

申请人： Dong-hun Kang ,  Stefanovich Genrikh ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim

发明人： Dong-hun Kang ,  Stefanovich Genrikh ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim

IPC分类号： H01L29/221 ,  H01L21/441

CPC分类号： H01L29/7869

摘要： Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.

摘要翻译： 提供一种薄膜晶体管及其制造方法。 薄膜晶体管可以包括栅极; 一个通道层; 源极和漏极，源极和漏极由金属形成; 和金属氧化物层，金属氧化物层形成在沟道层与源极和漏极之间。 金属氧化物层可以在沟道层和源极和漏极之间具有逐渐变化的金属含量。

公开(公告)号：US20070272922A1

公开(公告)日：2007-11-29

申请号：US11702222

申请日：2007-02-05

申请人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

发明人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC分类号： H01L29/12 ,  H01L21/00

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78606

摘要： A zinc oxide (ZnO) thin film transistor (TFT) and method of forming the same are provided. The ZnO may include a ZnO semiconductor channel, a conductive ZnO gate forming an electric field around the ZnO semiconductor channel, an ZnO gate insulator interposed between the conductive ZnO gate and the ZnO semiconductor channel and an insulating ZnO passivation layer on the ZnO semiconductor channel, the conductive ZnO gate and the ZnO gate insulator to protect the ZnO semiconductor channel, the conductive ZnO gate, and the ZnO gate insulator. A thin film transistor (TFT) may be formed by forming a semiconductor channel, forming a conductive gate having an electric field around the semiconductor channel, forming a gate insulator between the conductive gate and the semiconductor channel, and forming an insulating passivation layer on the semiconductor channel, the conductive gate and the gate insulator.

摘要翻译： 提供了一种氧化锌（ZnO）薄膜晶体管（TFT）及其形成方法。 ZnO可以包括ZnO半导体沟道，在ZnO半导体沟道周围形成电场的导电ZnO栅极，介于导电ZnO栅极和ZnO半导体沟道之间的ZnO栅极绝缘体和ZnO半导体沟道上的绝缘ZnO钝化层， 导电ZnO栅极和ZnO栅极绝缘体，以保护ZnO半导体通道，导电ZnO栅极和ZnO栅极绝缘体。 可以通过形成半导体沟道来形成薄膜晶体管（TFT），在半导体沟道周围形成具有电场的导电栅极，在导电栅极和半导体沟道之间形成栅极绝缘体，并在其上形成绝缘钝化层 半导体通道，导电栅极和栅极绝缘体。

公开(公告)号：US08735882B2

公开(公告)日：2014-05-27

申请号：US12929323

申请日：2011-01-14

申请人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

发明人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC分类号： H01L29/12

CPC分类号： H01L29/7869

摘要： A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦ about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

摘要翻译： 半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z和nlE;约3.15和约0.55≤n1E; y / z＆ 约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US08324628B2

公开(公告)日：2012-12-04

申请号：US12073102

申请日：2008-02-29

申请人： Sun-il Kim ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

发明人： Sun-il Kim ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L29/7869

摘要： Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.

摘要翻译： 提供了一种用于薄膜晶体管的沟道层，薄膜晶体管及其形成方法。 用于薄膜晶体管的沟道层可以包括掺杂有过渡金属的IZO（氧化铟锌）。 薄膜晶体管可以包括栅电极和形成在衬底上的沟道层，形成在栅极和沟道层之间的栅极绝缘层，以及与沟道层的端部接触的源电极和漏电极。