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    Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
    1.
    发明授权
    Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor 有权
    薄膜晶体管包括选择性结晶的沟道层和制造薄膜晶体管的方法

    公开(公告)号：US08618543B2

    公开(公告)日：2013-12-31

    申请号：US11978581

    申请日：2007-10-30

    申请人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

    发明人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

    IPC分类号： H01L29/04

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675

    摘要： Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

    摘要翻译： 提供了包括选择性晶化的沟道层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括栅极，沟道层，源极和漏极。 沟道层由氧化物半导体形成，并且与源极和漏极接触的沟道层的至少一部分结晶。 在制造TFT的方法中，沟道层由氧化物半导体形成，并且将金属成分注入到沟道层中，以便使与沟道层和漏极接触的沟道层的至少一部分结晶。 可以通过沉积和热处理金属层或通过离子注入将金属成分注入到沟道层中。

    Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
    2.
    发明申请
    Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor 有权
    薄膜晶体管包括选择性结晶的沟道层和制造薄膜晶体管的方法

    公开(公告)号：US20080258140A1

    公开(公告)日：2008-10-23

    申请号：US11978581

    申请日：2007-10-30

    申请人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

    发明人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

    IPC分类号： H01L29/04 ,  H01L21/34

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675

    摘要： Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

    摘要翻译： 提供了包括选择性晶化的沟道层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括栅极，沟道层，源极和漏极。 沟道层由氧化物半导体形成，并且与源极和漏极接触的沟道层的至少一部分结晶。 在制造TFT的方法中，沟道层由氧化物半导体形成，并且将金属成分注入到沟道层中，以便使与沟道层和漏极接触的沟道层的至少一部分结晶。 可以通过沉积和热处理金属层或通过离子注入将金属成分注入到沟道层中。

    Transistors and electronic apparatuses including same
    4.
    发明授权
    Transistors and electronic apparatuses including same 有权
    晶体管及其电子设备

    公开(公告)号：US08426852B2

    公开(公告)日：2013-04-23

    申请号：US12923089

    申请日：2010-09-01

    申请人： Jae-cheol Lee ,  Chang-seung Lee ,  Jae-gwan Chung ,  Eun-ha Lee ,  Anass Benayad ,  Sang-wook Kim ,  Se-jung Oh

    发明人： Jae-cheol Lee ,  Chang-seung Lee ,  Jae-gwan Chung ,  Eun-ha Lee ,  Anass Benayad ,  Sang-wook Kim ,  Se-jung Oh

    IPC分类号： H01L29/12

    CPC分类号： H01L29/78606 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

    摘要： Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.

    摘要翻译： 提供了包括它们的晶体管和电子设备，晶体管包括在衬底上的沟道层。 沟道层包括含锌（Zn）的氧化物。 晶体管分别包括与沟道层的相对端接触的源极和漏极，对应于沟道层的栅极以及将沟道层与栅极绝缘的栅极绝缘层。 沟道层具有与基板相邻的第一表面，与第一表面相对的第二表面和在第二表面上的沟道层保护部分。 沟道层保护部分包括氟化物材料。

    Transistor and electronic apparatus including same
    5.
    发明申请
    Transistor and electronic apparatus including same 有权
    晶体管和包括它的电子设备

    公开(公告)号：US20110133176A1

    公开(公告)日：2011-06-09

    申请号：US12923089

    申请日：2010-09-01

    申请人： Jae-cheol Lee ,  Chang-seung Lee ,  Jae-gwan Chung ,  Eun-ha Lee ,  Anass Benayad ,  Sang-wook Kim ,  Se-jung Oh

    发明人： Jae-cheol Lee ,  Chang-seung Lee ,  Jae-gwan Chung ,  Eun-ha Lee ,  Anass Benayad ,  Sang-wook Kim ,  Se-jung Oh

    IPC分类号： H01L29/12

    CPC分类号： H01L29/78606 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

    摘要： Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.

    摘要翻译： 提供了包括它们的晶体管和电子设备，晶体管包括在衬底上的沟道层。 沟道层包括含锌（Zn）的氧化物。 晶体管分别包括与沟道层的相对端接触的源极和漏极，对应于沟道层的栅极以及将沟道层与栅极绝缘的栅极绝缘层。 沟道层具有与基板相邻的第一表面，与第一表面相对的第二表面和在第二表面上的沟道层保护部分。 沟道层保护部分包括氟化物材料。

    Oxide semiconductors and thin film transistors comprising the same
    6.
    发明授权
    Oxide semiconductors and thin film transistors comprising the same 有权
    氧化物半导体和包括其的薄膜晶体管

    公开(公告)号：US07935964B2

    公开(公告)日：2011-05-03

    申请号：US12213327

    申请日：2008-06-18

    申请人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

    发明人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869

    摘要： Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Hf and Cr atoms added thereto.

    摘要翻译： 提供包括其的氧化物半导体和薄膜晶体管（TFT）。 氧化物半导体包括Zn原子和添加了Hf原子和Cr原子中的至少一种。 薄膜晶体管（TFT）包括包括包含Zn原子和添加有Hf原子和Cr原子中的至少一种的氧化物半导体的沟道。

    Oxide semiconductors and thin film transistors comprising the same
    7.
    发明申请
    Oxide semiconductors and thin film transistors comprising the same 有权
    氧化物半导体和包括其的薄膜晶体管

    公开(公告)号：US20080315200A1

    公开(公告)日：2008-12-25

    申请号：US12213327

    申请日：2008-06-18

    申请人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

    发明人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869

    摘要： Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Hf and Cr atoms added thereto.

    摘要翻译： 提供包括其的氧化物半导体和薄膜晶体管（TFT）。 氧化物半导体包括Zn原子和添加了Hf原子和Cr原子中的至少一种。 薄膜晶体管（TFT）包括包括包含Zn原子和添加有Hf原子和Cr原子中的至少一种的氧化物半导体的沟道。

    Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same
    10.
    发明授权
    Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same 有权
    Al掺杂电荷陷阱层，非易失性存储器件及其制造方法

    公开(公告)号：US07838422B2

    公开(公告)日：2010-11-23

    申请号：US11892849

    申请日：2007-08-28

    申请人： Eun-ha Lee ,  Hion-suck Baik ,  Kwang-soo Seol ,  Sang-jin Park ,  Jong-bong Park ,  Min-ho Yang

    发明人： Eun-ha Lee ,  Hion-suck Baik ,  Kwang-soo Seol ,  Sang-jin Park ,  Jong-bong Park ,  Min-ho Yang

    IPC分类号： H01L21/44

    CPC分类号： H01L29/42332 ,  Y10T428/259

    摘要： Provided is an aluminum (Al) doped charge trap layer, a non-volatile memory device and methods of fabricating the same. The charge trap layer may include a plurality of silicon nano dots that trap charges and a silicon oxide layer that covers the silicon nano dots, wherein the charge trap layer is doped with aluminum (Al). The non-volatile memory device may include a substrate including a source and a drain on separate regions of the substrate, a tunneling film on the substrate contacting the source and the drain, the charge trap layer according to example embodiments, a blocking film on the charge trap layer, and a gate electrode on the blocking film.

    摘要翻译： 提供了铝（Al）掺杂的电荷阱层，非易失性存储器件及其制造方法。 电荷陷阱层可以包括捕获电荷的多个硅纳米点和覆盖硅纳米点的氧化硅层，其中电荷陷阱层掺杂有铝（Al）。 非挥发性存储器件可以包括衬底，该衬底包括在衬底的分离区域上的源极和漏极，在衬底上接触源极和漏极的隧道膜，根据示例性实施例的电荷陷阱层， 电荷陷阱层和阻挡膜上的栅电极。