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公开(公告)号：US06774482B2
公开(公告)日：2004-08-10
申请号：US10330742
申请日：2002-12-27
IPC分类号： H01L2334
CPC分类号： H01L23/367 , H01L23/42 , H01L2224/16225 , H01L2224/73253 , H01L2924/00014 , H01L2924/10253 , H01L2924/00 , H01L2224/0401
摘要： In an integrated circuit structure, such as in an MCM or in an SCM, a particulate thermally conductive conformable material, such as a thermal paste, is applied between a heat-generating chip and a cooling plate. Modification of the microstructure of at least one of the two nominally parallel surfaces which are in contact with the material is provided in a discrete pattern of sloped recesses. The largest particles in the material preferentially migrate downward into the recesses. The average thickness of the conductive paste is reduced to below the diameter of the largest particles dispersed in the material, providing improved cooling.
摘要翻译： 在集成电路结构中，例如在MCM或SCM中，在发热芯片和冷却板之间施加诸如导热膏的颗粒状的导热性良好的材料。 改变与材料接触的两个标称平行表面中的至少一个的微观结构以倾斜凹槽的离散图案提供。 材料中最大的颗粒优先向下迁移到凹槽中。 导电膏的平均厚度降低到分散在材料中的最大颗粒的直径以下，提供改进的冷却。
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公开(公告)号：US06495005B1
公开(公告)日：2002-12-17
申请号：US09563442
申请日：2000-05-01
IPC分类号： C25D1700
CPC分类号： C25D17/00 , C25D7/12 , H01L27/1292
摘要： An electroplating apparatus, in accordance with the present invention, includes a plurality of chambers. A first chamber includes an anode therein. The first chamber has an opening for delivering an electrolytic solution containing metal ions onto a surface to be electroplated. The surface to be electroplated is preferably a cathode. A second chamber is formed adjacent to the first chamber and has a second opening in proximity of the first opening for removing electrolytic solution containing metal ions from the surface to be electroplated. The plurality of chambers are adapted for movement in a first direction along the surface to be electroplated.
摘要翻译： 根据本发明的电镀设备包括多个室。 第一室包括阳极。 第一室具有用于将含有金属离子的电解液输送到待电镀的表面上的开口。 待电镀的表面优选为阴极。 邻近第一室形成第二室，并且在第一开口附近具有第二开口，用于从待电镀表面除去含有金属离子的电解溶液。 多个室适于沿着待电镀的表面在第一方向上移动。
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公开(公告)号：US07001498B2
公开(公告)日：2006-02-21
申请号：US10268633
申请日：2002-10-10
IPC分类号： C25D5/04
CPC分类号： C25D17/00 , C25D7/12 , H01L27/1292
摘要： An electroplating apparatus, in accordance with the present invention, includes a plurality of chambers. A first chamber includes an anode therein. The first chamber has an opening for delivering an electrolytic solution containing metal ions onto a surface to be electroplated. The surface to be electroplated is preferably a cathode. A second chamber is formed adjacent to the first chamber and has a second opening in proximity of the first opening for removing electrolytic solution containing metal ions from the surface to be electroplated. The plurality of chambers are adapted for movement in a first direction along the surface to be electroplated.
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4.发明授权公开(公告)号：US08426316B2
公开(公告)日：2013-04-23
申请号：US12204412
申请日：2008-09-04
IPC分类号： H01L21/302 , C23F1/00
CPC分类号： H01L21/306 , H01L21/32135 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76865 , H01L23/5227 , H01L23/53238 , H01L24/11 , H01L2224/13099 , H01L2924/01002 , H01L2924/01006 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01054 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/04953 , H01L2924/14 , H01L2924/19042 , H01L2924/30105 , H01L2924/00
摘要： Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.
摘要翻译： 公开了一种在电介质层上处理包括衬底，电介质层和TaN-Ta衬垫的类型的半导体结构的方法和系统。 该方法包括使用XeF 2将至少一部分TaN-Ta衬套完全去除到介电层的步骤。 在优选实施例中，本发明使用XeF2选择性气相蚀刻作为Ta-TaN化学机械抛光（CMP）的替代品作为基本的“衬垫去除工艺”，并且作为“选择性电镀镀层去除工艺”。 在第一次使用中，XeF2用于在铜CMP之后去除金属衬垫TaN-Ta。 在第二次使用中，XeF2蚀刻用于选择性地去除用于在铜导体上形成金属覆盖层的电镀基底（TaN-Ta）。
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公开(公告)号：US5831698A
公开(公告)日：1998-11-03
申请号：US700189
申请日：1996-08-20
IPC分类号： G02F1/133 , G02F1/1335 , G02F1/1347 , G02F1/137
CPC分类号： G02F1/1323 , G02F1/133504 , G02F1/13476 , G02F2203/62
摘要： A display having an electrically variable diffuser is disclosed. In response to an electric field, the electrically variable diffuser is electrically switched from a low illumination/narrow viewing angle mode to a high illumination/wide viewing angle mode. The viewing angle is correlated with backlight luminance to provide an adequate display as the viewing angle is varied. This allows a user to choose between preserving battery life and maximizing viewing angle.
摘要翻译： 公开了一种具有电可变扩散器的显示器。 响应于电场，电可变漫射器从低照度/窄视角模式电切换到高照度/宽视角模式。 视角与背光亮度相关，以在视角变化时提供足够的显示。 这允许用户在保持电池寿命和最大化视角之间进行选择。
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6.发明申请公开(公告)号：US20090001587A1
公开(公告)日：2009-01-01
申请号：US12204412
申请日：2008-09-04
IPC分类号： H01L23/532 , H01L21/306 , H01L21/67
CPC分类号： H01L21/306 , H01L21/32135 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76865 , H01L23/5227 , H01L23/53238 , H01L24/11 , H01L2224/13099 , H01L2924/01002 , H01L2924/01006 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01054 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/04953 , H01L2924/14 , H01L2924/19042 , H01L2924/30105 , H01L2924/00
摘要： Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.
摘要翻译： 公开了一种在电介质层上处理包括衬底，电介质层和TaN-Ta衬垫的类型的半导体结构的方法和系统。 该方法包括使用XeF 2将至少一部分TaN-Ta衬套完全去除到介电层的步骤。 在优选实施例中，本发明使用XeF2选择性气相蚀刻作为Ta-TaN化学机械抛光（CMP）的替代品作为基本的“衬垫去除工艺”，并且作为“选择性电镀镀层去除工艺”。 在第一次使用中，XeF2用于在铜CMP之后去除金属衬垫TaN-Ta。 在第二次使用中，XeF2蚀刻用于选择性地去除用于在铜导体上形成金属覆盖层的电镀基底（TaN-Ta）。
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7.发明授权公开(公告)号：US07422983B2
公开(公告)日：2008-09-09
申请号：US11064561
申请日：2005-02-24
IPC分类号： H01L21/302
CPC分类号： H01L21/306 , H01L21/32135 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76865 , H01L23/5227 , H01L23/53238 , H01L24/11 , H01L2224/13099 , H01L2924/01002 , H01L2924/01006 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01054 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/04953 , H01L2924/14 , H01L2924/19042 , H01L2924/30105 , H01L2924/00
摘要： Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.
摘要翻译： 公开了一种在电介质层上处理包括衬底，电介质层和TaN-Ta衬垫的类型的半导体结构的方法和系统。 该方法包括使用XeF 2将至少一部分TaN-Ta衬套完全去除到介电层的步骤。 在优选实施例中，本发明使用XeF2选择性气相蚀刻作为Ta-TaN化学机械抛光（CMP）的替代品作为基本的“衬垫去除工艺”，并且作为“选择性电镀镀层去除工艺”。 在第一次使用中，XeF2用于在铜CMP之后去除金属衬垫TaN-Ta。 在第二次使用中，XeF2蚀刻用于选择性地去除用于在铜导体上形成金属覆盖层的电镀基底（TaN-Ta）。
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