公开(公告)号：US11217434B2

公开(公告)日：2022-01-04

申请号：US16473744

申请日：2017-10-17

Applicant: Evatec AG

Inventor： Jurgen Weichart ,  Johannes Weichart

IPC: H01J37/32 ,  C23C16/46 ,  C23C14/35 ,  C23C16/44 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67

Abstract: In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.

公开(公告)号：US20200312624A1

公开(公告)日：2020-10-01

申请号：US16473744

申请日：2017-10-17

Applicant: Evatec AG

Inventor： Jurgen Weichart ,  Johannes Weichart

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.

公开(公告)号：US11469085B2

公开(公告)日：2022-10-11

申请号：US16473810

申请日：2017-10-17

Applicant: Evatec AG

Inventor： Jurgen Weichart ,  Johannes Weichart

IPC: C23C16/00 ,  H01L21/00 ,  H01J37/32 ,  C23C16/46 ,  C23C14/35 ,  C23C16/44 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67

Abstract: In a plasma reactor a pumping compartment is separate from a plasma-treating compartment by a structure which includes a central frame. The frame is suspended to the casing of the reactor via spokes. The spokes allow free expansion and contraction of the frame under thermal loading. The slits between the spokes do not allow plasma ignition there and provide for a small flow resistance between the treatment compartment and the pumping compartment. The frame may act as a downholding member for a substrate on the smaller electrode.

公开(公告)号：US20190341231A1

公开(公告)日：2019-11-07

申请号：US16473775

申请日：2017-10-17

Applicant: Evatec AG

Inventor： Johannes Weichart ,  Jurgen Weichart

IPC: H01J37/32 ,  H01L21/263 ,  C23C16/44 ,  C23C14/35

Abstract: In a capacitive coupled etch reactor, in which the smaller electrode is predominantly etched, the surface of the larger electrode is increased by a body e.g. a plate, which is on the same electric potential as the larger electrode and which is immersed in the plasma space. A pattern of openings in which plasma may burn is provided in the body so as to control the distribution of the etching effect on a substrate placed on the smaller electrode.

公开(公告)号：US11742187B2

公开(公告)日：2023-08-29

申请号：US16473775

申请日：2017-10-17

Applicant: Evatec AG

Inventor： Johannes Weichart ,  Jurgen Weichart

IPC: H01L21/00 ,  H01J37/32 ,  C23C16/46 ,  C23C14/35 ,  C23C16/44 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32834 ,  C23C14/35 ,  C23C16/4412 ,  C23C16/466 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32724 ,  H01J37/32816 ,  H01L21/2633 ,  H01L21/3065 ,  H01L21/67069 ,  H01J2237/002 ,  H01J2237/3341

Abstract: In a capacitive coupled etch reactor, in which the smaller electrode is predominantly etched, the surface of the larger electrode is increased by a body e.g. a plate, which is on the same electric potential as the larger electrode and which is immersed in the plasma space. A pattern of openings in which plasma may burn is provided in the body so as to control the distribution of the etching effect on a substrate placed on the smaller electrode.

公开(公告)号：US20210202282A1

公开(公告)日：2021-07-01

申请号：US16756548

申请日：2018-09-14

Applicant: EVATEC AG

Inventor： Johannes Weichart ,  Jurgen Weichart

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687

Abstract: A method of treating a substrate or of manufacturing a treated substrate includes the following steps: a) first treating a substrate in a first atmosphere of a first pressure, b) subsequently, second treating the first treated substrate in a second atmosphere of a second pressure, wherein the second temperature of the substrate is different from the first temperature and the second pressure is lower than the first pressure, c) between steps a) and b) locking in the first treated substrate from the first atmosphere into the second atmosphere, d) during locking in, heating or cooling the first treated substrate from the first temperature towards the second temperature.

公开(公告)号：US20190341234A1

公开(公告)日：2019-11-07

申请号：US16473810

申请日：2017-10-17

Applicant: Evatec AG

Inventor： Jurgen Weichart ,  Johannes Weichart

IPC: H01J37/32 ,  C23C16/46

Abstract: In a plasma reactor a pumping compartment is separate from a plasma-treating compartment by a structure which includes a central frame. The frame is suspended to the casing of the reactor via spokes. The spokes allow free expansion and contraction of the frame under thermal loading. The slits between the spokes do not allow plasma ignition there and provide for a small flow resistance between the treatment compartment and the pumping compartment. The frame may act as a downholding member for a substrate on the smaller electrode.