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    FABRICATING THIN-FILM OPTOELECTRONIC DEVICES WITH ADDED POTASSIUM
    3.
    发明申请
    FABRICATING THIN-FILM OPTOELECTRONIC DEVICES WITH ADDED POTASSIUM 审中-公开

    公开(公告)号：US20180069138A1

    公开(公告)日：2018-03-08

    申请号：US15810535

    申请日：2017-11-13

    申请人： FLISOM AG ,  EMPA

    发明人： Adrian CHIRILA ,  Stephan BUECHELER ,  Fabian PIANEZZI ,  Patrick REINHARD ,  Ayodhya Nath TIWARI

    IPC分类号： H01L31/032 ,  H01L21/02 ,  C23C14/14 ,  C23C14/24 ,  H01L31/18

    CPC分类号： H01L31/0323 ,  C23C14/14 ,  C23C14/24 ,  H01L21/02422 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/02631 ,  H01L31/18

    摘要： A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium. The method (200) and apparatus (300) are advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.

    FABRICATING THIN-FILM OPTOELECTRONIC DEVICES WITH ADDED POTASSIUM
    5.
    发明申请
    FABRICATING THIN-FILM OPTOELECTRONIC DEVICES WITH ADDED POTASSIUM 有权
    制造添加了磷酸盐的薄膜光电器件

    公开(公告)号：US20150333200A1

    公开(公告)日：2015-11-19

    申请号：US14654464

    申请日：2013-12-16

    申请人： FLISOM AG ,  EMPA

    发明人： Adrian CHIRILA ,  Stephan BUECHELER ,  Fabian PIANEZZI ,  Patrick REINHARD ,  Ayodhya Nath TIWARI

    IPC分类号： H01L31/032 ,  C23C14/24 ,  C23C14/14 ,  H01L31/18

    CPC分类号： H01L31/0323 ,  C23C14/14 ,  C23C14/24 ,  H01L21/02422 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/02631 ,  H01L31/18

    摘要： A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium. The method (200) and apparatus (300) are advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.

    摘要翻译： 一种用于制造薄膜光电器件（100）的方法（200）和沉积区设备（300），所述方法包括：提供无钾非扩散衬底（110），形成背接触层（120）; 形成由ABC硫属化物材料制成的至少一个吸收层（130），加入至少两种不同的碱金属，并形成至少一个前接触层（150），其中所述至少两种不同的碱金属之一是钾， 在形成所述前接触层之后，在从背接触层（120）排出的层（470）的间隔中，排除到前接触层（150）（包括端值），由添加至少两种不同碱 对于钾，金属在500至10000ppm的范围内，对于所述至少两种不同的碱金属中的另一种，在包含量的5至2000ppm，至多1/2和至少1/2000的范围内 的钾。 方法（200）和装置（300）有利于在具有高光电转换效率和更快生产速率的柔性基板上更环保地生产光伏器件（100）。

    SELF-ASSEMBLY PATTERNING FOR FABRICATING THIN-FILM DEVICES
    6.
    发明申请
    SELF-ASSEMBLY PATTERNING FOR FABRICATING THIN-FILM DEVICES 审中-公开

    公开(公告)号：US20200227575A1

    公开(公告)日：2020-07-16

    申请号：US16831593

    申请日：2020-03-26

    申请人： FLISOM AG

    发明人： Patrick REINHARD ,  Adrian CHIRILA

    IPC分类号： H01L31/032 ,  B81C1/00 ,  H01L21/02 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/042

    摘要： A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235) comprising Cs and/or Rb; controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).

    FABRICATING THIN-FILM OPTOELECTRONIC DEVICES WITH ADDED RUBIDIUM AND/OR CESIUM
    7.
    发明申请
    FABRICATING THIN-FILM OPTOELECTRONIC DEVICES WITH ADDED RUBIDIUM AND/OR CESIUM 审中-公开

    公开(公告)号：US20200243699A1

    公开(公告)日：2020-07-30

    申请号：US16845542

    申请日：2020-04-10

    申请人： FLISOM AG

    发明人： Patrick REINHARD ,  Adrian CHIRILA

    IPC分类号： H01L31/032 ,  H01L31/0445 ,  H01L21/02 ,  H01L31/0352 ,  H01L31/0392

    摘要： A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most 1/2 and at least 1/2000 of the comprised amount of Rb and/or Cs. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.

    SELF-ASSEMBLY PATTERNING FOR FABRICATING THIN-FILM DEVICES
    9.
    发明申请
    SELF-ASSEMBLY PATTERNING FOR FABRICATING THIN-FILM DEVICES 审中-公开

    公开(公告)号：US20190044008A1

    公开(公告)日：2019-02-07

    申请号：US16077036

    申请日：2017-01-27

    申请人： FLISOM AG

    发明人： Patrick REINHARD ,  Adrian CHIRILA

    IPC分类号： H01L31/032 ,  H01L21/02 ,  H01L31/042 ,  H01L31/0392 ,  H01L31/0352 ,  B81C1/00

    摘要： A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235) comprising Cs and/or Rb; controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).

    FABRICATING THIN-FILM OPTOELECTRONIC DEVICES WITH ADDED RUBIDIUM AND/OR CESIUM
    10.
    发明申请
    FABRICATING THIN-FILM OPTOELECTRONIC DEVICES WITH ADDED RUBIDIUM AND/OR CESIUM 审中-公开

    公开(公告)号：US20190035953A1

    公开(公告)日：2019-01-31

    申请号：US16077034

    申请日：2017-01-27

    申请人： FLISOM AG

    发明人： Patrick REINHARD ,  Adrian CHIRILA

    IPC分类号： H01L31/032 ,  H01L21/02 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/0445

    摘要： A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of Rb and/or Cs. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.