公开(公告)号：US20250054718A1

公开(公告)日：2025-02-13

申请号：US18752333

申请日：2024-06-24

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Koujun KONISHI ,  Takashi TSUTSUMI ,  Yuya SAKURAI ,  Yuma KUSANO

IPC: H01H50/54 ,  H01H49/00 ,  H01H50/02 ,  H01H50/16

Abstract: An electromagnetic contactor comprises: fixed contact pieces 3 including fixed contacts 9; an electromagnet unit 5 to which a movable contact piece 4, the movable contact piece 4 including movable contacts 10, the movable contacts 10 coming into contact with and being separated from the fixed contacts, is joined via a contact support 11; and a hermetically sealed container 2 configured to contain the fixed contact pieces, the movable contact piece, and the electromagnet unit in the same space, wherein in the electromagnet unit 5, unit-side joining portions 25a and 25b, the unit-side joining portions 25a and 25b being joined to container-side joining portions 33 and 36 arranged on the hermetically sealed container from the direction of movement of the movable contact piece, respectively, are arranged, and flat plate-shaped spacers 34 and 37 by which an inter-contact gap G between the fixed contacts and the movable contacts is adjusted are arranged interposed between the container-side joining portion and the unit-side joining portion.

公开(公告)号：US20170194438A1

公开(公告)日：2017-07-06

申请号：US15468941

申请日：2017-03-24

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Naoki KUMAGAI ,  Takashi TSUTSUMI ,  Yoshiyuki SAKAI ,  Yasuhiko OONISHI ,  Takumi FUJIMOTO ,  Kenji FUKUDA ,  Shinsuke HARADA ,  Mitsuo OKAMOTO

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/47 ,  H01L29/10 ,  H01L29/45 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/1608 ,  H01L21/0485 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66068 ,  H01L29/739 ,  H01L29/7802 ,  H01L29/7813

Abstract: A silicon carbide semiconductor device, including a silicon carbide semiconductor structure, an insulated gate structure including a gate insulating film contacting the silicon carbide semiconductor structure and a gate electrode formed on the gate insulating film, an interlayer insulating film covering the insulated gate structure, a metal layer provided on the interlayer insulating film for absorbing or blocking hydrogen, and a main electrode provided on the metal layer and electrically connected to the silicon carbide semiconductor structure.

公开(公告)号：US20160336224A1

公开(公告)日：2016-11-17

申请号：US15221678

申请日：2016-07-28

Applicant: FUJI ELECTRIC CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yoshiyuki SUGAHARA ,  Takashi TSUTSUMI ,  Youichi MAKIFUCHI ,  Tsuyoshi ARAOKA ,  Kenji FUKUDA ,  Shinsuke HARADA ,  Mitsuo OKAMOTO

IPC: H01L21/768 ,  H01L23/532 ,  H01L29/78 ,  H01L29/66 ,  H01L29/16 ,  H01L29/10

CPC classification number: H01L21/76883 ,  H01L21/045 ,  H01L21/0485 ,  H01L21/049 ,  H01L21/28 ,  H01L21/76846 ,  H01L23/53223 ,  H01L29/1095 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7802

Abstract: A method of manufacturing a silicon carbide semiconductor device includes forming on a front surface of a silicon carbide substrate of a first conductivity type, a silicon carbide layer of the first conductivity type of a lower concentration; selectively forming a region of a second conductivity type in a surface portion of the silicon carbide layer; selectively forming a source region of the first conductivity type in the region; forming a source electrode electrically connected to the source region; forming a gate insulating film on a surface of the region between the silicon carbide layer and the source region; forming a gate electrode on the gate insulating film; forming a drain electrode on a rear surface of the substrate; forming metal wiring comprising aluminum for the device, the metal wiring being connected to the source electrode; and performing low temperature nitrogen annealing after the metal wiring is formed.

Abstract translation: 一种制造碳化硅半导体器件的方法包括在第一导电类型的碳化硅衬底的前表面上形成较低浓度的第一导电类型的碳化硅层; 在碳化硅层的表面部分中选择性地形成第二导电类型的区域; 在该区域中选择性地形成第一导电类型的源区; 形成与源极电连接的源电极; 在所述碳化硅层和所述源极区域之间的区域的表面上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 在所述基板的后表面上形成漏电极; 形成用于所述器件的铝的金属布线，所述金属布线连接到所述源电极; 并且在形成金属布线之后进行低温氮退火。

公开(公告)号：US20240412932A1

公开(公告)日：2024-12-12

申请号：US18643055

申请日：2024-04-23

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Koujun KONISHI ,  Takashi TSUTSUMI ,  Yuya SAKURAI ,  Yuma KUSANO

IPC: H01H50/36 ,  H01H50/02

Abstract: To more effectively prevent separation of a contact unit at the time of short-circuit in an electromagnetic contactor. A capsule case is made of resin. A fixed yoke is arranged between a pair of fixed contact pieces, and at least a portion of the fixed yoke is held in a skeleton forming a capsule case. A movable yoke is disposed on a movable contact piece and is opposed to the fixed yoke. The fixed yoke and the movable yoke attract each other caused by a magnetic circuit being formed about an axis in a conduction direction in which current flows in the movable contact piece when a contact unit is closed.

公开(公告)号：US20180090321A1

公开(公告)日：2018-03-29

申请号：US15691158

申请日：2017-08-30

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Tsuyoshi ARAOKA ,  Youichi MAKIFUCHI ,  Takashi TSUTSUMI ,  Mitsuo OKAMOTO ,  Kenji FUKUDA

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/36 ,  H01L29/51

CPC classification number: H01L21/045 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/51 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66568 ,  H01L29/7802 ,  H01L29/94

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a gate insulating film provided on a front surface of the silicon carbide semiconductor substrate and including any one or a plurality of an oxide film, a nitride film, and an oxynitride film, and a gate electrode containing poly-silicon and provided on the gate insulating film. A concentration of fluorine in the gate insulating film at an interface with the silicon carbide semiconductor substrate is equal to or higher than 1×1019 atoms/cm3.

公开(公告)号：US20160126092A1

公开(公告)日：2016-05-05

申请号：US14991887

申请日：2016-01-08

Applicant: FUJI ELECTRIC CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Youichi MAKIFUCHI ,  Takashi TSUTSUMI ,  Tsuyoshi ARAOKA ,  Mitsuo OKAMOTO ,  Kenji FUKUDA

IPC: H01L21/02 ,  H01L29/51 ,  H01L29/16

CPC classification number: H01L21/02337 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/51 ,  H01L29/518 ,  H01L29/78 ,  H01L29/94

Abstract: On a silicon carbide semiconductor substrate, heat treatment is performed after one layer or two or more layers of an oxide film, a nitride film, or an oxynitride film are formed as a gate insulating film. The heat treatment after the gate insulating film is formed is performed for a given period in an atmosphere that includes H2 and H2O without including O2. As a result, hydrogen or hydroxyl groups can be segregated in a limited region that includes the interface of the silicon carbide substrate and the gate insulating film. The width of the region to which the hydrogen or hydroxyl groups is segregated is from 0.5 nm to 10 nm. In such a manner, the interface state density can be lowered and high channel mobility can be realized.

Abstract translation: 在碳化硅半导体衬底上，在形成一层或两层或更多层氧化膜，氮化物膜或氧氮化物膜作为栅极绝缘膜之后进行热处理。 形成栅极绝缘膜之后的热处理在包括H 2和H 2 O但不包括O 2的气氛中进行规定的时间。 结果，氢或羟基可以在包括碳化硅衬底和栅极绝缘膜的界面的有限区域中分离。 氢或羟基分离的区域的宽度为0.5nm至10nm。 以这种方式，可以降低界面状态密度并且可以实现高通道迁移率。