METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID
    3.
    发明申请
    METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID 有权
    生产半导体基板产品和蚀刻液的方法

    公开(公告)号:US20130244443A1

    公开(公告)日:2013-09-19

    申请号:US13770282

    申请日:2013-02-19

    CPC classification number: C09K13/08 H01L21/28158 H01L21/30604 H01L21/31111

    Abstract: A method for manufacturing a semiconductor substrate product having: providing an etching liquid containing water, a hydrofluoric acid compound and an organic solvent, and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.

    Abstract translation: 一种制造半导体衬底产品的方法,其具有:提供含有水,氢氟酸化合物和有机溶剂的蚀刻液,并将蚀刻液施加到半导体衬底,所述半导体衬底具有硅层和氧化硅层, 含有杂质的硅层,从而选择性地蚀刻氧化硅层。

    METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID
    5.
    发明申请
    METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID 审中-公开
    生产半导体基板产品和蚀刻液的方法

    公开(公告)号:US20150179471A1

    公开(公告)日:2015-06-25

    申请号:US14624860

    申请日:2015-02-18

    CPC classification number: H01L21/31111 C09K13/08 H01L21/28158 H01L21/30604

    Abstract: A method of producing a semiconductor substrate product, having the steps of: providing an etching liquid containing water, a hydrofluoric acid compound, and a water-soluble polymer; and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.

    Abstract translation: 一种制造半导体衬底产品的方法,具有以下步骤:提供含有水,氢氟酸化合物和水溶性聚合物的蚀刻液; 并且将蚀刻液施加到半导体衬底,所述半导体衬底具有硅层和氧化硅层,所述硅层含有杂质,从而选择性地蚀刻氧化硅层。

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