Abstract:
The magnetic recording medium includes: a non-magnetic support; and a magnetic layer including a ferromagnetic powder and a binding agent on the non-magnetic support, in which the magnetic layer further includes a compound including a polyalkyleneimine chain and a vinyl polymer chain. The composition for a magnetic recording medium includes: ferromagnetic powder; and a compound including a polyalkyleneimine chain and a vinyl polymer chain.
Abstract:
The magnetic recording medium includes: a non-magnetic support; and a magnetic layer including a ferromagnetic powder and a binding agent on the non-magnetic support, in which the magnetic layer further includes a compound including a polyalkyleneimine chain and a vinyl polymer chain. The composition for a magnetic recording medium includes: ferromagnetic powder; and a compound including a polyalkyleneimine chain and a vinyl polymer chain.
Abstract:
A gas separation membrane includes a gas separation layer containing a polyimide compound and the polyimide compound has a repeating unit represented by Formula (I). In Formula (I), Rf1, Rf4, Rf5, and Rf8 each independently represent an alkyl group. Rf2, Rf3, Rf6, Rf7, and Rf9 to Rf16 each independently represent a hydrogen atom or a substituent, and at least one of Rf2, Rf3, Rf6, Rf7, and Rf9, . . . , or Rf16 represents a specific polar group. A represents a single bond or a divalent linking group having a specific structure. R represents a mother nucleus having a specific structure.
Abstract:
Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)
Abstract:
An object of the present invention is to provide an organic thin film transistor that has an organic semiconductor film manufactured by using a compound having excellent solubility to an organic solvent and that has excellent carrier mobility, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1).
Abstract:
Disclosed is a photosensitive resin composition comprising: (Component A) an oxime sulfonate compound represented by Formula (1); (Component B) a resin comprising a constituent unit having an acid-decomposable group that is decomposed by an acid to form a carboxyl group or a phenolic hydroxy group; and (Component C) a solvent wherein in Formula (1) R1 denotes an alkyl group, an aryl group, or a heteroaryl group, each R2 independently denotes a hydrogen atom, an alkyl group, an aryl group, or a halogen atom, Ar1 denotes an o-arylene group or an o-heteroarylene group, X denotes O or S, and n denotes 1 or 2, provided that of two or more R2s present in the compound, at least one denotes an alkyl group, an aryl group, or a halogen atom.
Abstract:
An m-phenylenediamine compound is represented by the following General Formula (I), (II), or (III). R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or an aryl group. R2, R3, and R4 each represent an alkyl group. R5 and R6 each represent an alkyl group. X represents a chlorine atom or a bromine atom. A method for producing a polymer compound includes obtaining a polymer compound by using the m-phenylenediamine compound represented by General Formula (I) as a raw material.
Abstract:
A gas separation membrane includes a gas separation layer containing a polyimide compound, and the polyimide compound has a repeating unit represented by Formula (I). The gas separation module, the gas separation device, and the gas separation method are obtained by using the gas separation membrane, Ra represents a specific tetravalent group, Rb represents a trivalent group having a specific ring, Xa represents a specific substituent, and Xb represents a hydrogen atom or a substituent. A polyimide compound represented by Formula (I-b) or (I-c), Ra represents a specific tetravalent group, Rc represents a specific divalent group, Aa, Ab, Ac, and Xb represent a hydrogen atom or a substituent, and Xc and Xd represent a specific substituent.
Abstract:
Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)
Abstract:
Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)