公开(公告)号：US20220186077A1

公开(公告)日：2022-06-16

申请号：US17441587

申请日：2020-01-30

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Maki ASADA ,  Satoshi MOMOTA

IPC: C09G1/02 ,  H01L21/306

Abstract: The present invention provides means capable of achieving both a reduction in the number of defects and a reduction in haze in an object to be polished after polishing at a high level in a method of polishing the object to be polished containing a material having a silicon-silicon bond. The present invention relates to a method of polishing an object to be polished containing a material having a silicon-silicon bond, and the polishing method includes a final polishing step Pf. In this polishing method, the final polishing step Pf has a plurality of polishing sub-steps, the plurality of polishing sub-steps are continuously performed on the same polishing platen, a final polishing sub-step in the plurality of polishing sub-steps is a polishing sub-step Pff of polishing using a polishing composition Sff, a polishing sub-step provided before the polishing sub-step Pff in the plurality of polishing sub-steps is a polishing sub-step Pfp of polishing using a polishing composition Sfp, and the polishing composition Sff satisfies at least one of the following condition (A) or the following condition (B): condition (A): a value of a haze parameter of the polishing composition Sff obtained in a standard test 1 is smaller than a value of the haze parameter of the polishing composition Sfp obtained in the standard test 1, and condition (B): the polishing composition Sff contains an abrasive Aff, a basic compound Bff, and hydroxyethyl cellulose.

公开(公告)号：US20200010727A1

公开(公告)日：2020-01-09

申请号：US16486949

申请日：2018-02-06

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Maki ASADA ,  Satoshi MOMOTA

IPC: C09G1/02 ,  C09K3/14

Abstract: Provided is a polishing composition which is used in a step upstream of a final polishing step of a silicon substrate and can effectively realize a high-quality surface after the final polishing step. According to the present invention, there is provided an intermediate polishing composition to be used in the intermediate polishing step in a silicon substrate polishing process including both of the intermediate polishing step and the final polishing step. The intermediate polishing composition includes an abrasive A1, a basic compound B1, and a surface protective agent S1. The surface protective agent S1 includes a water-soluble polymer P1 having a weight average molecular weight of higher than 30×104 and a dispersant D1, and has a dispersibility parameter α1 of less than 80%.

公开(公告)号：US20180066161A1

公开(公告)日：2018-03-08

申请号：US15551267

申请日：2016-01-22

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Satoshi MOMOTA

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304

CPC classification number: C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/304

Abstract: To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.7, A=(D90−D50)/(D50−D10) and the polishing composition is used for final polishing in silicon wafer polishing.