公开(公告)号：US20200010727A1

公开(公告)日：2020-01-09

申请号：US16486949

申请日：2018-02-06

申请人： FUJIMI INCORPORATED

发明人： Kohsuke TSUCHIYA ,  Maki ASADA ,  Satoshi MOMOTA

IPC分类号： C09G1/02 ,  C09K3/14

摘要： Provided is a polishing composition which is used in a step upstream of a final polishing step of a silicon substrate and can effectively realize a high-quality surface after the final polishing step. According to the present invention, there is provided an intermediate polishing composition to be used in the intermediate polishing step in a silicon substrate polishing process including both of the intermediate polishing step and the final polishing step. The intermediate polishing composition includes an abrasive A1, a basic compound B1, and a surface protective agent S1. The surface protective agent S1 includes a water-soluble polymer P1 having a weight average molecular weight of higher than 30×104 and a dispersant D1, and has a dispersibility parameter α1 of less than 80%.

公开(公告)号：US20180066161A1

公开(公告)日：2018-03-08

申请号：US15551267

申请日：2016-01-22

申请人： FUJIMI INCORPORATED

发明人： Kohsuke TSUCHIYA ,  Satoshi MOMOTA

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/304

CPC分类号： C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/304

摘要： To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.7, A=(D90−D50)/(D50−D10) and the polishing composition is used for final polishing in silicon wafer polishing.

公开(公告)号：US20190189460A1

公开(公告)日：2019-06-20

申请号：US16285580

申请日：2019-02-26

申请人： FUJIMI INCORPORATED

发明人： Kohsuke TSUCHIYA

IPC分类号： H01L21/306 ,  B24B37/04 ,  H01L21/02 ,  C09G1/02 ,  B08B3/08 ,  B08B3/12

摘要： There is provided a polishing method capable of more reducing defects on a silicon wafer surface. A polishing method of a silicon wafer, which includes a polishing step and a surface treatment step conducted after the polishing step and in which the number of abrasives in a surface treatment composition used in the surface treatment step is 1.0×1010 particles/mL or more and 1.0×1013 particles/mL or less by calculating from (1 [mL]×specific gravity of the composition [g/mL]×concentration of the abrasives [wt %])/((4/3)π×(average secondary particle diameter×10−7 [cm]/2)3 [/particle]×specific gravity of the abrasives [g/cm3]), using concentration of the abrasives in the surface treatment composition and an average secondary particle diameter measured by dynamic light scattering method, provided that all of the abrasives in the surface treatment composition used in the surface treatment step are assumed to have the average secondary particle diameter.

公开(公告)号：US20160272846A1

公开(公告)日：2016-09-22

申请号：US14777841

申请日：2014-03-14

申请人： FUJIMI INCORPORATED

发明人： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Taiki ICHITSUBO

IPC分类号： C09G1/02 ,  C08F216/06 ,  C09G1/16 ,  H01L21/02

CPC分类号： C09G1/02 ,  C08F216/06 ,  C09G1/16 ,  C09K3/1436 ,  C09K3/1454 ,  H01L21/02024

摘要： Provided are a polishing composition comprising a water-soluble polymer that has a molecular structure comprising a plurality of repeat unit species having different SP values and a polishing composition exhibiting an etching rate and an abrasive adsorption in prescribed ranges when determined by prescribed methods. Also provided is a method for producing a polishing composition, using an abrasive, a basic compound, a water-soluble polymer having an alkaline-hydrolytic functional group, and water. The method comprises a step of obtaining an agent A comprising at least the basic compound and a step of obtaining an agent B comprising at least the water-soluble polymer H.

摘要翻译： 本发明提供一种抛光组合物，其包含水溶性聚合物，其具有包含多个具有不同SP值的重复单元种类的分子结构，以及抛光组合物，其通过规定的方法确定时具有规定范围内的蚀刻速率和磨料吸附。 还提供了使用研磨剂，碱性化合物，具有碱性水解官能团的水溶性聚合物和水来制造抛光组合物的方法。 该方法包括获得至少包含碱性化合物的试剂A和获得至少包含水溶性聚合物H的试剂B的步骤。

公开(公告)号：US20220267644A1

公开(公告)日：2022-08-25

申请号：US17632843

申请日：2020-07-30

申请人： FUJIMI INCORPORATED

发明人： Shinji FURUTA ,  Takashi HAYAKAWA ,  Keiji ASHITAKA ,  Naoya MIWA ,  Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Reiko AKIZUKI

IPC分类号： C09G1/02 ,  B01J20/28 ,  B01D69/02

摘要： Provided is a method for filtering an additive-containing liquid that can achieve a polishing composition exhibiting excellent defect reducing capability while maintaining a practical filter life. The method for filtering a polishing additive-containing liquid provided by the present invention includes the step of: filtering the polishing additive-containing liquid with a filter that satisfies the following conditions (1) and (2). (1) The average pore diameter P measured by a palm porometer is 0.15 μm or less. (2) The pore diameter gradient (Sin/Sout), which is the ratio of the inlet-side average pore diameter (SO to the outlet-side average pore diameter (Sout), both diameters being measured through observation with an SEM, is 3 or less.

公开(公告)号：US20210189177A1

公开(公告)日：2021-06-24

申请号：US16761302

申请日：2018-10-19

申请人： FUJIMI INCORPORATED ,  TOAGOSEI CO., LTD.

发明人： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Yusuke SUGA ,  Taiki ICHITSUBO ,  Takayuki TAKEMOTO ,  Naohiko SAITO ,  Michihiro KAAI

IPC分类号： C09G1/02 ,  B24B37/04

摘要： Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

公开(公告)号：US20180030313A1

公开(公告)日：2018-02-01

申请号：US15549488

申请日：2016-01-22

申请人： FUJIMI INCORPORATED

发明人： Kohsuke TSUCHIYA

IPC分类号： C09G1/02 ,  H01L21/306 ,  C09K3/14 ,  B24B37/04

CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/02052 ,  H01L21/30625

摘要： There is provided a polishing method capable of more reducing defects on a silicon wafer surface. A polishing method of a silicon wafer, which includes a polishing step and a surface treatment step conducted after the polishing step and in which the number of abrasives in a surface treatment composition used in the surface treatment step is 1.0×1010 particles/mL or more and 1.0×1013 particles/mL or less.

公开(公告)号：US20160122591A1

公开(公告)日：2016-05-05

申请号：US14895318

申请日：2014-05-02

申请人： FUJIMI INCORPORATED ,  TOAGOSEI CO., LTD.

发明人： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Taiki ICHITSUBO ,  Yoshio MORI

IPC分类号： C09G1/02

CPC分类号： C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/02052

摘要： This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

摘要翻译： 本发明提供了在磨料存在下使用的硅晶片抛光组合物。 该组合物包括硅晶片抛光促进剂，含酰胺基聚合物和水。 含酰胺基的聚合物在其主链中具有建筑单元A. 构成单元A包含构成含酰胺基聚合物的主链的主链碳原子和仲酰胺基或叔酰胺基。 构成仲酰胺基或叔酰胺基的羰基碳原子与主链碳原子直接相连。

公开(公告)号：US20230331930A1

公开(公告)日：2023-10-19

申请号：US18028920

申请日：2021-06-09

申请人： FUJIMI INCORPORATED

发明人： Hisanori TANSHO ,  Kohsuke TSUCHIYA ,  Hiroki YAMAGUCHI ,  Reiko AKIZUKI ,  Ryunosuke ANDO

IPC分类号： C08J3/07 ,  C09G1/02

CPC分类号： C08J3/07 ,  C09G1/02 ,  C08J2329/04

摘要： To provide a polyvinyl alcohol composition effectively suppressed in generation of an aggregated product, in a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition.
A method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition, wherein the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into the inside of any one solution of a first liquid containing polyvinyl alcohol and water and a second liquid other than the first liquid, the other liquid of the first liquid and the second liquid.

公开(公告)号：US20190077992A1

公开(公告)日：2019-03-14

申请号：US16185666

申请日：2018-11-09

申请人： FUJIMI INCORPORATED

发明人： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Taiki ICHITSUBO

IPC分类号： C09G1/02 ,  C08F216/06 ,  H01L21/306

摘要： Provided are polishing compositions comprising a water-soluble polymer and water. The water-soluble polymer of an embodiment has a repeat unit that does not have any hydroxyl groups, and the water-soluble polymer has a hydroxyl group content in a range of 4 mmol/g or higher and 21 mmol/g or lower. The water-soluble polymer of another embodiment has a repeat unit A that has a hydroxyl group and a repeat unit B, and the number of moles of the repeat unit B in the total number of moles of all the repeat units of the water-soluble polymer is 5% or greater.