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    INTERMEDIATE POLISHING COMPOSITION FOR SILICON SUBSTRATE AND POLISHING COMPOSITION SET FOR SILICON SUBSTRATE
    2.
    发明申请
    INTERMEDIATE POLISHING COMPOSITION FOR SILICON SUBSTRATE AND POLISHING COMPOSITION SET FOR SILICON SUBSTRATE 审中-公开

    公开(公告)号：US20200010727A1

    公开(公告)日：2020-01-09

    申请号：US16486949

    申请日：2018-02-06

    申请人： FUJIMI INCORPORATED

    发明人： Kohsuke TSUCHIYA ,  Maki ASADA ,  Satoshi MOMOTA

    IPC分类号： C09G1/02 ,  C09K3/14

    摘要： Provided is a polishing composition which is used in a step upstream of a final polishing step of a silicon substrate and can effectively realize a high-quality surface after the final polishing step. According to the present invention, there is provided an intermediate polishing composition to be used in the intermediate polishing step in a silicon substrate polishing process including both of the intermediate polishing step and the final polishing step. The intermediate polishing composition includes an abrasive A1, a basic compound B1, and a surface protective agent S1. The surface protective agent S1 includes a water-soluble polymer P1 having a weight average molecular weight of higher than 30×104 and a dispersant D1, and has a dispersibility parameter α1 of less than 80%.

    POLISHING COMPOSITION
    3.
    发明申请
    POLISHING COMPOSITION 有权

    公开(公告)号：US20220186078A1

    公开(公告)日：2022-06-16

    申请号：US17442712

    申请日：2020-03-25

    申请人： FUJIMI INCORPORATED

    发明人： Kohsuke TSUCHIYA ,  Maki ASADA ,  Taiki ICHITSUBO

    IPC分类号： C09G1/02 ,  C09K3/14

    摘要： Provided is a polishing composition having excellent capability of reducing haze on the surface of an object to be polished. The polishing composition provided by the present invention includes an abrasive, a basic compound, a water-soluble polymer, and water. The water-soluble polymer includes at least a water-soluble polymer P1 and a water-soluble polymer P2. Here, the water-soluble polymer P1 is an acetalized polyvinyl alcohol-based polymer, and the water-soluble polymer P2 is a water-soluble polymer other than the acetalized polyvinyl alcohol-based polymer.

    METHOD OF POLISHING OBJECT TO BE POLISHED CONTAINING MATERIAL HAVING SILICON-SILICON BOND
    4.
    发明申请
    METHOD OF POLISHING OBJECT TO BE POLISHED CONTAINING MATERIAL HAVING SILICON-SILICON BOND 有权

    公开(公告)号：US20220186077A1

    公开(公告)日：2022-06-16

    申请号：US17441587

    申请日：2020-01-30

    申请人： FUJIMI INCORPORATED

    发明人： Kohsuke TSUCHIYA ,  Maki ASADA ,  Satoshi MOMOTA

    IPC分类号： C09G1/02 ,  H01L21/306

    摘要： The present invention provides means capable of achieving both a reduction in the number of defects and a reduction in haze in an object to be polished after polishing at a high level in a method of polishing the object to be polished containing a material having a silicon-silicon bond. The present invention relates to a method of polishing an object to be polished containing a material having a silicon-silicon bond, and the polishing method includes a final polishing step Pf. In this polishing method, the final polishing step Pf has a plurality of polishing sub-steps, the plurality of polishing sub-steps are continuously performed on the same polishing platen, a final polishing sub-step in the plurality of polishing sub-steps is a polishing sub-step Pff of polishing using a polishing composition Sff, a polishing sub-step provided before the polishing sub-step Pff in the plurality of polishing sub-steps is a polishing sub-step Pfp of polishing using a polishing composition Sfp, and the polishing composition Sff satisfies at least one of the following condition (A) or the following condition (B): condition (A): a value of a haze parameter of the polishing composition Sff obtained in a standard test 1 is smaller than a value of the haze parameter of the polishing composition Sfp obtained in the standard test 1, and condition (B): the polishing composition Sff contains an abrasive Aff, a basic compound Bff, and hydroxyethyl cellulose.