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23 条记录 (耗时 0.02 秒)

    Lower electrode design for higher uniformity
    1.
    发明授权
    Lower electrode design for higher uniformity 有权

    公开(公告)号：US07524397B2

    公开(公告)日：2009-04-28

    申请号：US10040326

    申请日：2002-01-03

    申请人： Fangli Hao ,  Albert R. Ellingboe ,  Eric H. Lenz

    发明人： Fangli Hao ,  Albert R. Ellingboe ,  Eric H. Lenz

    IPC分类号： H01L21/306 ,  C23C16/00

    CPC分类号： H01J37/32623 ,  H01J37/32642

    摘要： A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the lower end of the process chamber. The electrode is configured for generating an electric field inside the process chamber. The plasma processing system also includes a component for controlling an impedance between the electrode and the plasma. The impedance is arranged to affect the electric field to improve processing uniformity across the surface of the substrate.

    Lower electrode design for higher uniformity
    2.
    发明授权
    Lower electrode design for higher uniformity 有权
    较低的电极设计，使均匀性更高

    公开(公告)号：US06363882B1

    公开(公告)日：2002-04-02

    申请号：US09475824

    申请日：1999-12-30

    申请人： Fangli Hao ,  Albert R. Ellingboe ,  Eric H. Lenz

    发明人： Fangli Hao ,  Albert R. Ellingboe ,  Eric H. Lenz

    IPC分类号： C23C1600

    CPC分类号： H01J37/32623 ,  H01J37/32642

    摘要： A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the lower end of the process chamber. The electrode is configured for generating an electric field inside the process chamber. The plasma processing system also includes a component for controlling an impedance between the electrode and the plasma. The impedance is arranged to affect the electric field to improve processing uniformity across the surface of the substrate.

    摘要翻译： 公开了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括处理室，其中等离子体都被点燃并持续进行处理。 等离子体处理系统还包括设置在处理室的下端的电极。 电极被配置为在处理室内产生电场。 等离子体处理系统还包括用于控制电极和等离子体之间的阻抗的部件。 阻抗被布置成影响电场以改善跨衬底表面的加工均匀性。

    Deformation reduction at the main chamber
    3.
    发明授权
    Deformation reduction at the main chamber 有权
    主室变形减少

    公开(公告)号：US06712929B1

    公开(公告)日：2004-03-30

    申请号：US09634806

    申请日：2000-08-08

    申请人： Eric Lenz ,  Albert R. Ellingboe ,  Fangli Hao

    发明人： Eric Lenz ,  Albert R. Ellingboe ,  Fangli Hao

    IPC分类号： C23C1600

    CPC分类号： H01L21/67069 ,  H01J37/32458

    摘要： A vacuum chamber with a cover with a first section, a second section, and a pocket between the first section and second section is provided. The vacuum chamber has a main cavity to which the first section is adjacent. The vacuum chamber may be used for plasma processing, which may require a critical element to be supported by the first section. The pocket is in fluid communication with the main cavity. When a vacuum is created in the main cavity, the pressure is also reduced in the pocket. As a result, the second section of the cover is deformed by the vacuum in the pocket. However, the vacuum in the pocket helps to prevent the first section from deforming, providing better support for the critical element.

    摘要翻译： 提供具有盖的真空室，其具有在第一部分和第二部分之间的第一部分，第二部分和凹穴。 真空室具有第一部分相邻的主腔。 真空室可用于等离子体处理，其可能需要由第一部分支撑的关键元件。 口袋与主腔流体连通。 当在主腔中产生真空时，口袋中的压力也降低。 结果，盖的第二部分通过袋中的真空而变形。 然而，口袋中的真空有助于防止第一部分变形，为关键元件提供更好的支撑。

    Deformation reduction at the main chamber
    4.
    发明授权
    Deformation reduction at the main chamber 有权
    主室变形减少

    公开(公告)号：US06949204B1

    公开(公告)日：2005-09-27

    申请号：US10771112

    申请日：2004-02-02

    申请人： Eric Lenz ,  Albert R. Ellingboe ,  Fangli Hao

    发明人： Eric Lenz ,  Albert R. Ellingboe ,  Fangli Hao

    IPC分类号： H01J37/32 ,  H01L21/00 ,  C23F1/00 ,  C23C16/00 ,  H01L31/306

    CPC分类号： H01L21/67069 ,  H01J37/32458

    摘要： A vacuum chamber with a cover with a first section, a second section, and a pocket between the first section and second section is provided. The vacuum chamber has a main cavity to which the first section is adjacent. The vacuum chamber may be used for plasma processing, which may require a critical element to be supported by the first section. The pocket is in fluid communication with the main cavity. When a vacuum is created in the main cavity, the pressure is also reduced in the pocket. As a result, the second section of the cover is deformed by the vacuum in the pocket. However, the vacuum in the pocket helps to prevent the first section from deforming, providing better support for the critical element.

    摘要翻译： 提供具有盖的真空室，其具有在第一部分和第二部分之间的第一部分，第二部分和凹穴。 真空室具有第一部分相邻的主腔。 真空室可用于等离子体处理，其可能需要由第一部分支撑的关键元件。 口袋与主腔流体连通。 当在主腔中产生真空时，口袋中的压力也降低。 结果，盖的第二部分通过袋中的真空而变形。 然而，口袋中的真空有助于防止第一部分变形，为关键元件提供更好的支撑。

    Corrosion resistant apparatus for control of a multi-zone nozzle in a plasma processing system
    7.
    发明申请
    Corrosion resistant apparatus for control of a multi-zone nozzle in a plasma processing system 审中-公开
    用于控制等离子体处理系统中的多区域喷嘴的耐腐蚀设备

    公开(公告)号：US20060065523A1

    公开(公告)日：2006-03-30

    申请号：US10957443

    申请日：2004-09-30

    申请人： Fangli Hao ,  John Daugherty ,  James Tappan

    发明人： Fangli Hao ,  John Daugherty ,  James Tappan

    IPC分类号： C23C14/00 ,  C23C14/32

    CPC分类号： H01J37/3244 ,  H01J37/32082

    摘要： In a plasma processing system, an integrated gas flow control assembly for connecting a gas distribution system to a multi-zone injector is disclosed. The assembly includes a first set of channels connecting the gas distribution system to a first valve assembly with a first flow rate, a second valve assembly with a second flow rate, a third flow assembly with a third flow rate, and a fourth flow assembly with a fourth flow rate, wherein when the first valve assembly is substantially open, the third flow rate is less than the first flow rate, and wherein when the second valve assembly is substantially open, the fourth flow rate is less than the second flow rate. The assembly also includes a second set of channels for connecting the third flow assembly and the first valve assembly to a first multi-zone injector zone. The assembly further includes a third set of channels for connecting the fourth flow assembly and the second valve assembly to a second multi-zone injector zone. Wherein if the first valve assembly is closed, a first multi-zone injector zone flow rate is about the third flow rate, and wherein if the second valve assembly is closed, a second multi-zone injector zone flow rate is about the fourth flow rate.

    摘要翻译： 在等离子体处理系统中，公开了一种用于将气体分配系统连接到多区域喷射器的集成气体流量控制组件。 组件包括将气体分配系统连接到具有第一流量的第一阀组件的第一组通道，具有第二流量的第二阀组件，具有第三流量的第三流量组件和具有第三流量的第四流量组件， 第四流量，其中当第一阀组件基本上打开时，第三流量小于第一流量，并且其中当第二阀组件基本上打开时，第四流量小于第二流量。 组件还包括用于将第三流动组件和第一阀组件连接到第一多区域注入器区域的第二组通道。 组件还包括用于将第四流动组件和第二阀组件连接到第二多区域注入器区域的第三组通道。 其中，如果第一阀组件关闭，则第一多区域喷射器区域流速约为第三流量，并且其中如果第二阀组件关闭，则第二多区域喷射器区域流速约为第四流量 。

    Two position robot design for FOUP purge
    8.
    发明授权
    Two position robot design for FOUP purge 有权
    FOUP清洗的两位机器人设计

    公开(公告)号：US06922867B1

    公开(公告)日：2005-08-02

    申请号：US10210573

    申请日：2002-07-31

    申请人： Fangli Hao

    发明人： Fangli Hao

    IPC分类号： A47L5/14 ,  B08B5/02 ,  B08B9/08 ,  H01L21/00 ,  H01L21/673

    CPC分类号： H01L21/67393 ,  B08B5/02 ,  B08B9/08 ,  H01L21/67017

    摘要： This invention is an apparatus for purging unwanted gasses from the Front Opening Unified Pod (FOUP). It consists of a purging wand which is inserted into the chamber for an optimal purge. The purging wand moves back and forth along a simple axis activated by a linkage robot. The wand is carried along a track with the FOUP and when its reaches its optimal position inside the FOUP, the source of cleaning gas is allowed to flow into and spray out of the wand thereby purging the FOUP. After the purging is completed, the linkage robot withdraws the wand from within the FOUP to its original position.

    摘要翻译： 本发明是用于从前开口统一荚（FOUP）清除不需要的气体的装置。 它由吹扫棒组成，其被插入室中以获得最佳清洗。 吹扫棒沿着由联动机器人启动的简单轴线来回移动。 魔杖与FOUP一起沿着轨道运送，并且当其在FOUP内达到最佳位置时，清洁气体源被允许流入并喷出杖，从而清除FOUP。 清洗完成后，联动机构将FOUP中的魔杖提回到原来的位置。

    Symmetrical semiconductor reactor
    9.
    发明授权
    Symmetrical semiconductor reactor 有权
    对称半导体反应堆

    公开(公告)号：US06889627B1

    公开(公告)日：2005-05-10

    申请号：US10189111

    申请日：2002-07-03

    申请人： Fangli Hao

    发明人： Fangli Hao

    IPC分类号： H01L21/00 ,  C23C16/00 ,  H05H1/00

    CPC分类号： H01L21/67126 ,  H01J37/32458

    摘要： A symmetrical semiconductor reactor for semiconductor processing, comprising a liner, a process chamber, a valve chamber, a slot valve plate, a liner aperture plate, a rod, and an actuator. The liner has a liner aperture adapted to provide passage for a wafer and to receive the liner aperture plate. The process chamber is coupled to the liner and the valve chamber. The actuator is coupled to the slot valve plate and moves the slot valve plate from the “closed” to the “open” position and vice versa. Since the slot valve plate is coupled to the liner aperture plate by the rod, the actuator is capable of moving the slot valve plate and the liner aperture plate at the same time. However, the precise movements of the liner aperture plate are dependent on the particular rod embodiment.

    摘要翻译： 一种用于半导体加工的对称半导体反应器，包括衬套，处理室，阀室，槽阀板，衬里孔板，杆和致动器。 衬里具有适于为晶片提供通道并接收衬垫孔板的衬里孔。 处理室联接到衬套和阀室。 致动器联接到槽阀板并将槽阀板从“关闭”位置移动到“打开”位置，反之亦然。 由于槽阀板通过杆联接到衬套孔板，致动器能够同时移动槽阀板和衬套孔板。 然而，衬套孔板的精确运动取决于具体的棒实施例。

    Wafer area pressure control
    10.
    发明授权
    Wafer area pressure control 有权
    晶圆面积压力控制

    公开(公告)号：US06433484B1

    公开(公告)日：2002-08-13

    申请号：US09637736

    申请日：2000-08-11

    申请人： Fangli Hao ,  Eric Lenz ,  Bruno Morel

    发明人： Fangli Hao ,  Eric Lenz ,  Bruno Morel

    IPC分类号： H01G724

    CPC分类号： H01J37/32449 ,  H01J37/32623

    摘要： A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a confinement device that provides wafer area pressure control greater than 40%. Such a confinement device may be a fixed vertical restriction ring in addition to the confinement ring, where the confinement ring is adjustable. In the alternative, three adjustable confinement rings may be used to provide the desired wafer area pressure control.

    摘要翻译： 提供等离子体处理室，其提供改进的晶片面积压力控制。 等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。 该装置的一部分将是蚀刻剂气源和排气口。 限制环限定晶片上方的区域。 晶片面积压力取决于限制环上的压降。 限制环是限制装置的一部分，其提供超过40％的晶片面积压力控制。 除了限制环之外，这种限制装置可以是固定的垂直限制环，其中限制环是可调节的。 在替代方案中，可以使用三个可调约束环来提供期望的晶片面积压力控制。