High frequency response writer with recessed shared pole and vertical coils
    1.
    发明授权
    High frequency response writer with recessed shared pole and vertical coils 有权
    具有凹陷共享极点和垂直线圈的高频响应写入器

    公开(公告)号:US06441994B1

    公开(公告)日:2002-08-27

    申请号:US09566560

    申请日:2000-05-08

    IPC分类号: G11B517

    摘要: A magnetic recording head has a top pole, a write gap layer, a shared pole, and conductive coils. The shared pole has an air bearing surface, a top surface substantially normal to the air bearing surface, and a recess in the top surface extending across the top surface parallel to the air bearing surface. The shared pole is separated from the top pole at the air bearing surface by the write gap layer, and directly contacts the top pole at a region of the writer distal from the air bearing surface. Wrapped around the top pole are the conductive coils, a portion of which is positioned in the recess of the shared pole between the top pole and the shared pole.

    摘要翻译: 磁记录头具有顶极,写间隙层,共享极和导电线圈。 共享极具有空气轴承表面,基本上垂直于空气轴承表面的顶表面,以及在顶表面中平行于空气轴承表面延伸的凹部。 共用极杆通过写入间隙层与空气轴承表面的顶极分离,并且在远离空气支承表面的作者的区域处直接接触顶极。 围绕顶极缠绕的是导电线圈,其一部分位于顶极和共享极之间的共享极的凹部中。

    Non-Sequential Encoding Scheme for Multi-Level Cell (MLC) Memory Cells
    5.
    发明申请
    Non-Sequential Encoding Scheme for Multi-Level Cell (MLC) Memory Cells 有权
    用于多级单元(MLC)存储单元的非顺序编码方案

    公开(公告)号:US20120243311A1

    公开(公告)日:2012-09-27

    申请号:US13070021

    申请日:2011-03-23

    IPC分类号: G11C16/04 G11C11/14

    摘要: Apparatus and method for managing an array of multi-level cell (MLC) memory cells. In accordance with various embodiments, a non-sequential encoding scheme is selected that assigns a different multi-bit logical value to each of a plurality of available physical states of a selected MLC memory cell in relation to write effort associated with each of said plurality of physical states. Data are thereafter written to the selected MLC memory cell in relation to the selected non-sequential encoding scheme. In some embodiments, the MLC memory cell comprises a spin-torque transfer random access memory (STRAM) memory cell. In other embodiments, the MLC memory cell comprises an MLC flash memory cell.

    摘要翻译: 用于管理多层单元(MLC)存储单元阵列的装置和方法。 根据各种实施例,选择非顺序编码方案,其相对于与所述多个存储器单元中的每一个相关联的写入功率,将所选择的MLC存储器单元的多个可用物理状态中的每一个分配给不同的多位逻辑值 物理状态 相关于所选择的非顺序编码方案,数据被写入所选择的MLC存储器单元。 在一些实施例中,MLC存储器单元包括自旋转矩传递随机存取存储器(STRAM)存储器单元。 在其他实施例中,MLC存储器单元包括MLC闪存单元。

    Reticle sorter
    8.
    发明授权
    Reticle sorter 有权
    标线分选机

    公开(公告)号:US06878895B1

    公开(公告)日:2005-04-12

    申请号:US09383508

    申请日:1999-08-26

    IPC分类号: B07C5/344

    CPC分类号: B07C5/344 Y10S209/939

    摘要: A reticle sorter and a semiconductor fabrication facility employing one or more reticle sorters is provided. The reticle sorter(s) generally lies between a reticle storage system and a group of one or more photolithography exposure tools (e.g., steppers) and is configured for sorting reticles in one or more cassettes. The use of the reticle sorter provides sorting functionality apart from the reticle storage system and typically closer to the group of photolithography steppers with which it is associated. This can, for example, significantly increase the throughput of semiconductor wafers through the associated photolithography exposure tools as well as in the semiconductor fabrication plant as a whole.

    摘要翻译: 提供了采用一个或多个掩模版分拣机的掩模版分拣机和半导体制造设备。 掩模版分选机通常位于掩模版存储系统和一组一个或多个光刻曝光工具(例如步进器)之间,并且被配置用于将一个或多个盒中的掩模版分类。 标线分类器的使用提供了除了掩模版存储系统之外的分类功能,并且通常更接近与其相关联的光刻步进组。 例如,这可以通过相关的光刻曝光工具以及整个半导体制造工厂显着提高半导体晶片的生产量。

    Managing a semiconductor fabrication facility using wafer lot and cassette attributes
    9.
    发明授权
    Managing a semiconductor fabrication facility using wafer lot and cassette attributes 有权
    使用晶圆批次和磁带属性管理半导体制造设备

    公开(公告)号:US06449522B1

    公开(公告)日:2002-09-10

    申请号:US09193349

    申请日:1998-11-17

    IPC分类号: G06F1900

    摘要: Systems and methods for managing automated material handling systems, such as semiconductor fabrication facilities, using material item (e.g., wafer lot) attributes and cassette attributes are provided. A semiconductor fabrication facility typically includes multiple wafer lots and multiple cassettes for storing the wafer lots. A system and method, in one embodiment of the invention, includes setting one or more lot attributes for each wafer lot, setting one or more cassette attributes for each cassette, and selecting a particular cassette for holding a particular wafer lot based on the one or more wafer lot attributes of the particular wafer lot and the one or more cassette attributes of the particular cassette. The wafer lot and cassette attributes may, for example, include an attribute identifying a position in a fabrication sequence and one or more attributes indicative of one or more contaminants. By selecting cassettes in this manner, wafer lots and cassettes may, for example, be classified or logically zoned.

    摘要翻译: 提供了用于管理自动化材料处理系统的系统和方法,例如半导体制造设施,使用材料项目(例如,晶片块)属性和盒子属性。 半导体制造设备通常包括多个晶片批次和用于存储晶片批次的多个盒。 在本发明的一个实施例中的系统和方法包括设置每个晶片批次的一个或多个批次属性,为每个盒设置一个或多个盒属性,并且基于该一个或多个盒子选择用于保持特定晶片批次的特定盒 特定晶片批次的更多晶片批次属性和特定盒的一个或多个盒属性。 晶片块和盒属性可以例如包括识别制造序列中的位置的属性和指示一种或多种污染物的一个或多个属性。 通过以这种方式选择盒式磁带,可以对晶片批次和磁带盒进行分类或逻辑划分。

    Laminated hard magnet in MR sensor
    10.
    发明授权
    Laminated hard magnet in MR sensor 失效
    MR传感器中的层叠硬磁体

    公开(公告)号:US06351357B1

    公开(公告)日:2002-02-26

    申请号:US09665782

    申请日:2000-09-20

    IPC分类号: G11B539

    摘要: A magneto-resistive sensor has a magneto-resistive element with an active area with an electrical resistance sensitive to changes in magnetic flux. Two hard magnets on opposing sides of the magneto-resistive element magnetically bias the magneto-resistive element. Each hard magnet includes a seed layer of a soft magnetic, electrically conductive material between two magnet layers of a hard magnetic, electrically conductive material laminated longitudinally together such that the seed layer and the magnet layers exhibit unified magnetic properties. The seed layer is preferably an amorphous material such as nitrided sendust. The laminated structure allows for a thicker magnet structure with low electrical resistance but without degradation of magnetic properties due to the increased thickness.

    摘要翻译: 磁阻传感器具有磁阻元件,其具有对磁通量变化敏感的电阻的有源区域。 磁阻元件的相对侧上的两个硬磁体磁偏置磁阻元件。 每个硬磁体包括在纵向一体层叠的硬磁导电材料的两个磁体层之间的软磁导电材料的种子层,使得晶种层和磁体层表现出统一的磁性。 种子层优选为无定形材料,例如氮化硅铝石。 层压结构允许具有低电阻的较厚的磁体结构,但由于增加的厚度而不降低磁性能。