Vapour phase chemical infiltration process for densifying porous
substrates disposed in annular stacks
    1.
    发明授权
    Vapour phase chemical infiltration process for densifying porous substrates disposed in annular stacks 失效
    用于致密化设置在环形堆叠中的多孔基材的气相化学渗透方法

    公开(公告)号:US5904957A

    公开(公告)日:1999-05-18

    申请号:US945325

    申请日:1997-10-15

    摘要: A chemical vapor infiltration method for densifying porous substrates disposed in annular stacks. The substrates to be densified (12) are loaded inside a reaction chamber (11) of an infiltration oven, being disposed in at least one annular stack (30) defining an interior passage (31) with spaces (33) being formed between the substrates. The gas admitted into the reaction chamber is channelled on leaving a preheating zone (18) towards one of the two volumes constituted by the inside and the outside of the, or each, stack of substrates, and preferably towards the smaller volume. This volume (31) is closed at its opposite end so that the gas flows from admission into the chamber to its exhaust from the chamber from the inside to the outside of the, or each, stack, or vice versa, with the gas passing through the spaces between the substrates and diffusing into them.

    摘要翻译: PCT No.PCT / FR96 / 00582 Sec。 371日期:1997年10月15日 102(e)1997年10月15日PCT PCT 1996年4月17日PCT公布。 出版物WO96 / 33295 日期1996年10月24日用于致密化设置在环形堆叠中的多孔基材的化学气相渗透方法。 要被致密化的基底(12)被装载在渗透炉的反应室(11)内,该反应室设置在限定内部通道(31)的至少一个环形堆叠(30)中,在基板之间形成有空间(33) 。 入口到反应室中的气体被引导离开预热区(18),朝向由每个或多个衬底堆的内部和外部构成的两个体积之一,并且优选地朝向较小体积。 该容积(31)在其相对端处封闭,使得气体从入口流入腔室至其从腔室的排出物从每个堆叠的每个堆叠的内部流向外部,或反之亦然,气体通过 衬底之间的空隙并扩散到它们中。

    Chemical vapor infiltration method with variable infiltration parameters
    4.
    发明授权
    Chemical vapor infiltration method with variable infiltration parameters 失效
    化学气相渗透法具有可变渗透参数

    公开(公告)号:US6001419A

    公开(公告)日:1999-12-14

    申请号:US930743

    申请日:1997-10-06

    摘要: Between the start and the end of the chemical vapor infiltration process, filtration conditions are modified by causing at least one of the following infiltration parameters to vary: retention time of the gas, pressure, temperature, concentration of precursor in the gas, and concentration of dopant, if any, in the gas; thereby adapting infiltration conditions to changes in the porometry of the substrate in order to control the microstructure of the material deposited within the substrate, in particular in order to conserve a microstructure that is constant.

    摘要翻译: PCT No.PCT / FR96 / 00530 Sec。 371日期:1997年10月6日 102(e)日期1997年10月6日PCT 1996年4月9日PCT PCT。 公开号WO96 / 31447 日期1996年10月10日在化学气相渗透过程的开始和结束之间,通过使至少一个以下渗透参数变化来改变渗透条件:气体的保留时间,压力,温度,前体浓度 气体和气体中掺杂剂的浓度(如果有的话); 从而使渗透条件适应于衬底的孔隙率的变化,以便控制沉积在衬底内的材料的微结构,特别是为了保持恒定的微结构。