公开(公告)号：US5510947A

公开(公告)日：1996-04-23

申请号：US367747

申请日：1995-01-03

申请人： Franco Pellegrini ,  Marco Morelli ,  Athos Canclini

发明人： Franco Pellegrini ,  Marco Morelli ,  Athos Canclini

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/78 ,  H03K17/08 ,  H03K19/003 ,  H02H9/04

CPC分类号： H01L27/0248

摘要： In an anti-ESD protective structure, especially designed for pins destined to reach below ground and/or above supply voltages, includes a pair of Zener diodes or lateral NPN structures with a resistive connection between base and emitter, connected in opposition among each other between the pin to be protected and a grounded substrate of the integrated circuit. An amplifying effect on the leakage current which is drawn/injected through the pin by the protective structure caused by the triggering of an intrinsic parasitic transistor is effectively eliminated by connecting a biasing element, such as a forward biased junction, between the node of interconnection between the two Zener orlateral NPN structures and a node of the integrated circuit biased with a voltage sufficiently high as to ensure, under any condition, a reverse biasing of the base-emitter junction of the parasitic transistor.

摘要翻译： 在防静电保护结构中，特别针对目的地达到低于地和/或高于电源电压的引脚设计，包括一对齐纳二极管或侧向NPN结构，其具有基极和发射极之间的电阻连接， 待保护的引脚和集成电路的接地基板。 通过在内部寄生晶体管的触发引起的保护结构通过引脚引出/注入的漏电流的放大效应通过在诸如正向偏置结之间的偏置元件之间连接在第 两个齐纳边的NPN结构和集成电路的一个节点，其偏压电压足够高，以确保在任何条件下寄生晶体管的基极 - 发射极的反偏置。

公开(公告)号：US20080208425A1

公开(公告)日：2008-08-28

申请号：US12018068

申请日：2008-01-22

申请人： Giulio Riccoti ,  Marco Morelli ,  Luigi Della Torre ,  Andrea Lorenzo Vitali ,  Ubaldo Mastromatteo

发明人： Giulio Riccoti ,  Marco Morelli ,  Luigi Della Torre ,  Andrea Lorenzo Vitali ,  Ubaldo Mastromatteo

IPC分类号： G06F19/00 ,  G01L9/02

CPC分类号： G01L9/0054 ,  G01L9/0045 ,  G01L15/00

摘要： In a pressure sensor with double measuring scale: a monolithic body of semiconductor material has a first main surface, a bulk region and a sensitive portion upon which pressure acts; a cavity is formed in the monolithic body and is separated from the first main surface by a membrane, which is flexible and deformable as a function of the pressure, and is arranged inside the sensitive portion and is surrounded by the bulk region; a low-pressure detecting element of the piezoresistive type, sensitive to first values of pressure, is integrated in the membrane and has a variable resistance as a function of the deformation of the membrane; in addition, a high-pressure detecting element, also of a piezoresistive type, is formed in the bulk region inside the sensitive portion and has a variable resistance as a function of the pressure. The high-pressure detecting element is sensitive to second values of pressure.

摘要翻译： 在具有双重测量尺的压力传感器中：半导体材料的整体主体具有第一主表面，主体区域和压力作用在其上的敏感部分; 在整体式主体中形成空腔，并通过作为压力的函数而变形的柔性且可变形的膜与第一主表面分离，并且布置在敏感部分的内部并被体区域包围; 对第一压力值敏感的压阻型低压检测元件集成在膜​​中，并具有作为膜的变形的函数的可变电阻; 此外，在敏感部分内部的本体区域中形成压阻型高压检测元件，并且具有作为压力的函数的可变电阻。 高压检测元件对第二压力值敏感。

公开(公告)号：US6037826A

公开(公告)日：2000-03-14

申请号：US99243

申请日：1993-07-28

申请人： Vanni Poletto ,  Marco Morelli

发明人： Vanni Poletto ,  Marco Morelli

IPC分类号： H01L29/73 ,  G05F1/569 ,  H01L21/331 ,  H03K17/0422 ,  H03K17/08

CPC分类号： G05F1/569 ,  H03K17/0422

摘要： Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Unlike the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.

摘要翻译： 双极功率晶体管的饱和度通过感测由饱和晶体管最终注入到集成电路的衬底中的电流来控制，并且使用该信号对通过功率晶体管的基极驱动的电流施加限制作用 专用驱动电路。 与现有技术的抗饱和系统不同，不再需要精确地监视双极功率晶体管的端子两端的工作电压。 合适的感测电阻可以方便地集成在与双极晶体管的经常复杂的集成结构相距一定距离处。 本发明的系统提供了许多优点，并且仅在功率晶体管正确地达到饱和状态，但在任何不期望的后果之前才能确保抗饱和电路的干预。

公开(公告)号：US5818274A

公开(公告)日：1998-10-06

申请号：US740345

申请日：1996-11-07

申请人： Giampaolo Lombreschi ,  Maurizio Gallinari ,  Marco Morelli

发明人： Giampaolo Lombreschi ,  Maurizio Gallinari ,  Marco Morelli

IPC分类号： H03K3/037

CPC分类号： H03K3/037

摘要： A flip-flop circuit able to commute in correspondence with any logic transition of the input signal using a flip-flop and a logic gate of the EXNOR type receiving at its input a signal and the inverted output of the flip-flop. To the output of the EXNOR gate is connected a set-reset flip-flop which allows a reset to be effected after each commutation of the circuit in order to prepare it for the next transition.

摘要翻译： 触发器电路能够使用触发器和EXNOR类型的逻辑门与输入信号的任何逻辑转换相对应地通勤，在其输入端接收信号和触发器的反相输出。 在EXNOR门的输出端连接一个置位复位触发器，该触发器允许在每次电路换向之后进行复位，以便为下一个转换做好准备。

公开(公告)号：US5229907A

公开(公告)日：1993-07-20

申请号：US536886

申请日：1990-06-13

申请人： Marco Morelli ,  Fabio Marchio ,  Bruno Cavalli

发明人： Marco Morelli ,  Fabio Marchio ,  Bruno Cavalli

IPC分类号： H01L27/04 ,  G05F1/10 ,  H01L21/822 ,  H01L27/06 ,  H02H3/20 ,  H02H9/04

CPC分类号： H02H9/046 ,  H02H9/041

摘要： The device for protection comprises a zener diode voltage limiter having a breakdown voltage pre-set at a value (say, 30 volts) lower than the maximum value sustainable by the protected circuit in the closed condition and a quenching circuit having a pre-set lag controlled by each overvoltage impulse and suitable for disactivating said voltage limiter and to control the opening of said protected circuit with a time lag pre-set with respect to the start of each overvoltage impulse. In succession to said voltage limiter there is introduced in addition a zener diode with a higher breakdown voltage, say, equal to 110 volts, which allows the limitation to such a value of any overvoltages having a very low energy content superimposed over overvoltages having limited amplitude and long duration.

公开(公告)号：US4962346A

公开(公告)日：1990-10-09

申请号：US180501

申请日：1988-04-12

申请人： Giampietro Maggioni ,  Fabio Marchio ,  Marco Morelli ,  Francesco Tricoli

发明人： Giampietro Maggioni ,  Fabio Marchio ,  Marco Morelli ,  Francesco Tricoli

IPC分类号： H03K17/16 ,  H03K17/082 ,  H03K17/64

CPC分类号： H03K17/0826

摘要： A circuit for recirculating an inductive load's (L) discharge current through the driving power switching transistor (Tpw) utilizes a control transistor (Tc) of opposite polarity to that of the power transistor and capable of withstanding a minimum fraction (1/.beta.) of the discharge current. The circuit has the advantage of allowing recirculation of current with a fixed overvoltage independent of the value of the supply voltage, without requiring additional power devices. The circuit may also be provided with means (D1, D2 and DZ1) to turn-on the control transistor in the presence of concomitant supply overvoltages to protect the power device from dumping effects.

公开(公告)号：US09006862B2

公开(公告)日：2015-04-14

申请号：US13608880

申请日：2012-09-10

申请人： Vincenzo Palumbo ,  Dario Paci ,  Paolo Iuliano ,  Fausto Carace ,  Marco Morelli

发明人： Vincenzo Palumbo ,  Dario Paci ,  Paolo Iuliano ,  Fausto Carace ,  Marco Morelli

IPC分类号： H01L29/72 ,  H01L23/522 ,  H01L23/64 ,  H01L25/16

CPC分类号： H01L23/5227 ,  H01L23/645 ,  H01L25/16 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： An embodiment of an electronic device includes first and second semiconductor bodies. The first semiconductor body houses a first conductive strip having a first end portion and a second end portion, and houses a first conduction terminal electrically coupled to the first end portion and facing a surface of the first semiconductor body. The second semiconductor body houses a second conductive strip having a third end portion and a fourth end portion, and houses a second conduction terminal electrically coupled to the third end portion and facing a surface of the second semiconductor body. The first and second semiconductor bodies are arranged relative to one another so that the respective surfaces face one another, and the first conduction terminal and the second conduction terminal are coupled to one another by means of a conductive element so as to form a loop of an inductor.

摘要翻译： 电子设备的实施例包括第一和第二半导体本体。 第一半导体体容纳具有第一端部和第二端部的第一导电带，并且容纳电耦合到第一端部并面向第一半导体本体的表面的第一导电端子。 第二半导体体容纳具有第三端部和第四端部的第二导电带，并且容纳与第三端部电耦合并面向第二半导体本体的表面的第二导电端子。 第一和第二半导体本体相对于彼此布置，使得各个表面彼此面对，并且第一导电端子和第二导电端子通过导电元件彼此耦合以形成环路 电感。

公开(公告)号：US07578196B2

公开(公告)日：2009-08-25

申请号：US12018068

申请日：2008-01-22

申请人： Giulio Riccoti ,  Marco Morelli ,  Luigi Della Torre ,  Andrea Lorenzo Vitali ,  Ubaldo Mastromatteo

发明人： Giulio Riccoti ,  Marco Morelli ,  Luigi Della Torre ,  Andrea Lorenzo Vitali ,  Ubaldo Mastromatteo

IPC分类号： G01L9/00

CPC分类号： G01L9/0054 ,  G01L9/0045 ,  G01L15/00

摘要： In a pressure sensor with double measuring scale: a monolithic body of semiconductor material has a first main surface, a bulk region and a sensitive portion upon which pressure acts; a cavity is formed in the monolithic body and is separated from the first main surface by a membrane, which is flexible and deformable as a function of the pressure, and is arranged inside the sensitive portion and is surrounded by the bulk region; a low-pressure detecting element of the piezoresistive type, sensitive to first values of pressure, is integrated in the membrane and has a variable resistance as a function of the deformation of the membrane; in addition, a high-pressure detecting element, also of a piezoresistive type, is formed in the bulk region inside the sensitive portion and has a variable resistance as a function of the pressure. The high-pressure detecting element is sensitive to second values of pressure.

摘要翻译： 在具有双重测量尺的压力传感器中：半导体材料的整体主体具有第一主表面，主体区域和压力作用在其上的敏感部分; 在整体式主体中形成空腔，并通过作为压力的函数而变形的柔性且可变形的膜与第一主表面分离，并且布置在敏感部分的内部并被体区域包围; 对第一压力值敏感的压阻型低压检测元件集成在膜​​中，并具有作为膜的变形的函数的可变电阻; 此外，在敏感部分内部的本体区域中形成压阻型高压检测元件，并且具有作为压力的函数的可变电阻。 高压检测元件对第二压力值敏感。

公开(公告)号：US6040736A

公开(公告)日：2000-03-21

申请号：US984959

申请日：1997-12-04

申请人： Andrea Milanesi ,  Vanni Poletto ,  Alberto Poma ,  Marco Morelli

发明人： Andrea Milanesi ,  Vanni Poletto ,  Alberto Poma ,  Marco Morelli

IPC分类号： G05F1/575 ,  G05F1/10

CPC分类号： G05F1/575

摘要： A voltage-regulator circuit with a low voltage drop uses a DMOS power transistor driven by a charge pump. The control circuit includes two feedback loops: a first feedback loop having a high gain and accuracy but low response speed, and a second feedback loop having a wide passband and fast response speed, but low gain.

摘要翻译： 具有低压降的电压调节器电路使用由电荷泵驱动的DMOS功率晶体管。 控制电路包括两个反馈回路：具有高增益和精度但低响应速度的第一反馈回路，以及具有宽通带和快速响应速度但低增益的第二反馈回路。

公开(公告)号：US5920255A

公开(公告)日：1999-07-06

申请号：US902558

申请日：1997-07-29

申请人： Vanni Poletto ,  Alberto Poma ,  Marco Morelli

发明人： Vanni Poletto ,  Alberto Poma ,  Marco Morelli

IPC分类号： G01F23/00 ,  G01F23/30 ,  B60Q1/00

CPC分类号： G01F23/0061 ,  G01F23/30

摘要： The electronic interface circuit can perform ratiometric processing and driving of a signal generated by a fuel-level detector of a vehicle. The circuit uses a current mirror configured so as to send one half of the output current to the input resistance and one half of the output current to earth. The current mirror is controlled by a voltage taken from the input resistance and by a voltage taken from a resistive divider, the latter voltage having been filtered by a low-pass filter, so as to achieve ratiometric processing of the input signal.

摘要翻译： 电子接口电路可以执行比例计算处理和驱动由车辆的燃料液位检测器产生的信号。 该电路使用电流镜，配置为将输出电流的一半发送到输入电阻，输出电流的一半输出到地。 电流镜由从输入电阻取得的电压和从电阻分压器获取的电压来控制，后一电压已被低通滤波器滤波，以便实现输入信号的比例处理。