公开(公告)号：US07019292B1

公开(公告)日：2006-03-28

申请号：US10869588

申请日：2004-06-15

申请人： Frank Y. H. Fan ,  David L. Adler ,  Kirk J. Bertsche ,  Luca Grella

发明人： Frank Y. H. Fan ,  David L. Adler ,  Kirk J. Bertsche ,  Luca Grella

IPC分类号： H01J37/256

CPC分类号： H01J37/05 ,  H01J37/28 ,  H01J2237/057 ,  H01J2237/281 ,  H01J2237/2817 ,  H01L22/14

摘要： One embodiment disclosed relates to a method for robustly detecting a defective high aspect ratio (HAR) feature. A surface area of a semiconductor specimen with HAR features thereon is charged up, and a primary beam is impinged onto the surface area. Scattered electrons that are generated due to the impingement of the primary beam are extracted from the surface area. An energy filter is applied to remove the scattered electrons with lower energies, and the filtered electrons are detected. Image data is generated from the detected electrons, and an intensity threshold is applied to the image data.

摘要翻译： 公开的一个实施例涉及用于鲁棒地检测有缺陷的高纵横比（HAR）特征的方法。 其上具有HAR特征的半导体样品的表面积被充电，并且主光束撞击到表面区域。 从表面区域提取由于主光束的撞击而产生的分散电子。 应用能量滤波器去除具有较低能量的散射电子，并且检测滤波电子。 从检测到的电子生成图像数据，并且将强度阈值应用于图像数据。

公开(公告)号：US06828571B1

公开(公告)日：2004-12-07

申请号：US10699708

申请日：2003-11-03

申请人： Mark A. McCord ,  Jan A. Lauber ,  Paul Petric ,  Ross W. Thompson ,  Jason Lim ,  Frank Y. H. Fan ,  Gabor D. Toth

发明人： Mark A. McCord ,  Jan A. Lauber ,  Paul Petric ,  Ross W. Thompson ,  Jason Lim ,  Frank Y. H. Fan ,  Gabor D. Toth

IPC分类号： H01L2100

CPC分类号： G01R31/307 ,  G01R31/2653 ,  H01J37/026 ,  H01J37/21 ,  H01J2237/0048 ,  H01J2237/20 ,  H01J2237/216 ,  H01J2237/2817

摘要： One embodiment disclosed relates to a method of setting a surface charge of an area on a substrate to a desired level. The substrate is held on a stage, and a stage bias voltage applied to the stage is controlled. A flood of electrons is directed to the area. The stage bias voltage is controlled such that the surface charge of the area reaches an equilibrium at the desired level. Another embodiment disclosed relates to a method of auto-focusing a main electron beam incident upon an imaging area of a substrate. A monitor electron beam is generated and directed towards a monitoring area of the substrate at a non-perpendicular incidence angle. An in-focus band in data collected from the monitor beam is detected. The focal length of an objective lens focusing the main beam is adjusted based upon a position of the in-focus band.

摘要翻译： 公开的一个实施例涉及一种将衬底上的区域的表面电荷设置到期望水平的方法。 将基板保持在平台上，并且控制施加到载物台的载物台偏置电压。 大量的电子被引导到该地区。 阶段偏置电压被控制使得该区域的表面电荷达到期望水平的平衡。 公开的另一实施例涉及一种自动聚焦入射到基板的成像区域上的主电子束的方法。 产生监视电子束并以非垂直入射角朝向基板的监视区域。 检测从监视器束收集的数据中的对焦带。 聚焦主光束的物镜的焦距基于对焦带的位置进行调整。

公开(公告)号：US07132301B1

公开(公告)日：2006-11-07

申请号：US10600500

申请日：2003-06-19

申请人： Frank Y. H. Fan

发明人： Frank Y. H. Fan

IPC分类号： H01L21/00

CPC分类号： H01J37/28 ,  H01J2237/24564 ,  H01J2237/2817

摘要： Techniques for identifying, locating, detecting, and reviewing voltage contrast defects are described. A system for implementing the present invention includes a charged particle beam defect review system with one or more installed electron flood guns. In order to review a semiconductor specimen, an entire semiconductor wafer or a sub-region of a wafer is flooded with electrons from the flood gun(s) so that the wafer surface is charged to a certain voltage level. Flooding the specimen greatly enhances the effect of voltage contrast review techniques and therefore manifests voltage contrast defects that would not appear otherwise. The inventive techniques can also be applied so that a review system can be used to inspect at least a portion of a semiconductor wafer. Techniques for controlling the amount of negative charge applied to the specimen are also described.

摘要翻译： 描述了用于识别，定位，检测和检查电压对比度缺陷的技术。 用于实现本发明的系统包括带有一个或多个安装的电子洪水枪的带电粒子束缺陷评估系统。 为了检查半导体样品，晶片的整个半导体晶片或子区域被来自洪水枪的电子淹没，使得晶片表面被充电到一定的电压水平。 浸渍样品会大大增强电压对比度检查技术的效果，因此表现出不会出现的电压对比度缺陷。 还可以应用本发明的技术，使得可以使用检查系统来检查半导体晶片的至少一部分。 还描述了用于控制施加到样品的负电荷量的技术。