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    Integrated Capacitor Arrangement for Ultrahigh Capacitance Values
    1.
    发明申请
    Integrated Capacitor Arrangement for Ultrahigh Capacitance Values 有权
    用于超高电容值的集成电容器布置

    公开(公告)号：US20080291601A1

    公开(公告)日：2008-11-27

    申请号：US12092608

    申请日：2006-11-02

    申请人： Freddy Roozeboom ,  Johan H. Klootwijk ,  Antonius L.A.M. Kemmeren ,  Derk Reefman ,  Johannes F.C.M. Verhoeven

    发明人： Freddy Roozeboom ,  Johan H. Klootwijk ,  Antonius L.A.M. Kemmeren ,  Derk Reefman ,  Johannes F.C.M. Verhoeven

    IPC分类号： H01G4/228

    CPC分类号： H01L28/91 ,  H01L27/0805 ,  H01L27/1087 ,  H01L29/945

    摘要： The present invention relates to an electronic device (300) comprising at least one trench capacitor (302) that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence (308) of at least two dielectric layers (312, 316) and at least two electrically conductive layers (314, 318) is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads (332, 334, 340) is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. By providing an individual internal contact pad for each of the electrically conductive layers, a range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value. The electronic device of the invention thus provides a flexible trench-capacitor manufacturing platform for a multitude of combinations of electrically conductive layers with each other, or, when multiple trenches are used, between electrically conductive layers of different trench capacitors. On-chip applications such as a charge-pump circuit or a DC-to-DC voltage converter are claimed that benefit from the ultra-high capacitance density and the high breakdown voltage that can be achieved with the electronic device of the invention.

    摘要翻译： 电子设备技术领域本发明涉及一种电子设备（300），其包括至少一个也可采取反向结构形式的沟槽电容器（302），立柱电容器。 至少两个电介质层（312,316）和至少两个导电层（314,318）的交替层序列（308）设置在沟槽电容器或柱状电容器中，使得至少两个导电 层通过至少两个电介质层中的相应电极彼此电隔离并且与衬底电隔离。 提供一组内部接触焊盘（332,334,340），并且每个内部接触焊盘与相应的一个导电层或基板连接。 通过为每个导电层提供单独的内部接触焊盘，开启一定范围的切换机会，允许将电容器的比电容调谐到期望值。 因此，本发明的电子器件为不同沟槽电容器的导电层之间的导电层的多种组合，或者当使用多个沟槽时提供柔性的沟槽电容器制造平台。 要求使用诸如电荷泵电路或DC-DC电压转换器的片上应用，其受益于本发明的电子器件可实现的超高电容密度和高击穿电压。

    DC-to-DC converter comprising a reconfigurable capacitor unit
    2.
    发明授权
    DC-to-DC converter comprising a reconfigurable capacitor unit 有权
    DC-DC转换器包括可重构电容器单元

    公开(公告)号：US08395914B2

    公开(公告)日：2013-03-12

    申请号：US12597308

    申请日：2008-05-08

    申请人： Johan H. Klootwijk ,  Hendrik J. Bergveld ,  Freddy Roozeboom ,  Derk Reefman ,  Jaap Ruigrok

    发明人： Johan H. Klootwijk ,  Hendrik J. Bergveld ,  Freddy Roozeboom ,  Derk Reefman ,  Jaap Ruigrok

    IPC分类号： H02M3/07

    CPC分类号： H01L27/0805 ,  H02M3/07

    摘要： The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling.

    摘要翻译： 本发明涉及一种包括半导体衬底中的沟槽的可配置沟槽多电容器器件。 沟槽的横向延伸超过10微米，沟槽填充物包括多个至少四个导电电容器电极层。 提供一种开关单元，其包括在沟槽填充物的不同电容器 - 电极层之间电连接的多个开关元件。 控制单元与开关单元连接，并且被配置为使用沟槽填充的电容器电极层来生成并向开关单元提供各自的控制信号，以形成多个多电容器配置中的相应一个。

    Integrated capacitor arrangement for ultrahigh capacitance values
    3.
    发明授权
    Integrated capacitor arrangement for ultrahigh capacitance values 有权
    用于超高电容值的集成电容器布置

    公开(公告)号：US08085524B2

    公开(公告)日：2011-12-27

    申请号：US12092608

    申请日：2006-11-02

    申请人： Freddy Roozeboom ,  Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Derk Reefman ,  Johannes F. C. M. Verhoeven

    发明人： Freddy Roozeboom ,  Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Derk Reefman ,  Johannes F. C. M. Verhoeven

    IPC分类号： H01G4/228

    CPC分类号： H01L28/91 ,  H01L27/0805 ,  H01L27/1087 ,  H01L29/945

    摘要： An electronic device includes at least one trench capacitor that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. A range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value.

    摘要翻译： 电子设备包括至少一个也可以采取反向结构形式的沟槽电容器，立柱电容器。 至少两个电介质层和至少两个导电层的交替层序列设置在沟槽电容器或柱状电容器上，使得至少两个导电层通过相应的电气彼此电隔离并且与衬底电隔离 至少两个电介质层中的一个。 提供了一组内部接触焊盘，并且每个内部接触焊盘与相应的一个导电层或与衬底连接。 开启了一系列切换机会，可将电容器的比电容调谐到所需的值。

    DC-TO-DC CONVERTER COMPRISING A RECONFIGURABLE CAPACITOR UNIT
    4.
    发明申请
    DC-TO-DC CONVERTER COMPRISING A RECONFIGURABLE CAPACITOR UNIT 有权
    包含可重构电容单元的DC-DC转换器

    公开(公告)号：US20100117612A1

    公开(公告)日：2010-05-13

    申请号：US12597308

    申请日：2008-05-08

    申请人： Johan H. Klootwijk ,  Hendrik J. Bergveld ,  Freddy Roozeboom ,  Derk Reefman ,  Jaap Ruigrok

    发明人： Johan H. Klootwijk ,  Hendrik J. Bergveld ,  Freddy Roozeboom ,  Derk Reefman ,  Jaap Ruigrok

    IPC分类号： H02M3/07

    CPC分类号： H01L27/0805 ,  H02M3/07

    摘要： The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling.

    摘要翻译： 本发明涉及一种包括半导体衬底中的沟槽的可配置沟槽多电容器器件。 沟槽的横向延伸超过10微米，沟槽填充物包括多个至少四个导电电容器电极层。 提供一种开关单元，其包括在沟槽填充物的不同电容器 - 电极层之间电连接的多个开关元件。 控制单元与开关单元连接，并且被配置为使用沟槽填充的电容器电极层，生成并向开关单元提供各自的控制信号，以形成多个多电容器配置中的相应一个。

    Integration substrate with a ultra-high-density capacitor and a through-substrate via
    5.
    发明授权
    Integration substrate with a ultra-high-density capacitor and a through-substrate via 有权
    集成基板与超高密度电容器和贯通基板通孔

    公开(公告)号：US08729665B2

    公开(公告)日：2014-05-20

    申请号：US12599494

    申请日：2008-05-08

    申请人： Johan H. Klootwijk ,  Freddy Roozeboom ,  Jaap Ruigrok ,  Derk Reefman

    发明人： Johan H. Klootwijk ,  Freddy Roozeboom ,  Jaap Ruigrok ,  Derk Reefman

    IPC分类号： H01L21/02

    CPC分类号： H01L27/0805 ,  H01L23/481 ,  H01L28/90 ,  H01L2224/73204

    摘要： An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. —The capacitor-electrode layers are alternatingly connected to a respective one of two capacitor terminals provided on the first or second substrate side. The trench capacitor and the through-substrate via are formed in respective trench openings and via openings in the semiconductor substrate, which have an equal lateral extension exceeding 10 micrometer. This structure allows, among other advantages, a particularly cost-effective fabrication of the integration substrate because the via openings and the trench openings in the substrate can be fabricated simultaneously.

    摘要翻译： 用于封装系统的集成衬底包括贯穿衬底通孔和沟槽电容器，其中沟槽填充物包括与电介质层交替布置的至少四个导电电容器电极层。 - 电容器电极层交替地连接到设置在第一或第二基板侧上的两个电容器端子中的相应一个。 沟槽电容器和贯穿基板通孔形成在半导体衬底中的相应的沟槽开口和通孔中，其具有超过10微米的相等的横向延伸。 除了其它优点之外，这种结构允许一体化衬底的特别成本有效的制造，因为可以同时制造衬底中的通孔开口和沟槽开口。

    INTEGRATION SUBSTRATE WITH A ULTRA-HIGH-DENSITY CAPACITOR AND A THROUGH-SUBSTRATE VIA
    8.
    发明申请
    INTEGRATION SUBSTRATE WITH A ULTRA-HIGH-DENSITY CAPACITOR AND A THROUGH-SUBSTRATE VIA 有权
    具有超高密度电容器和通过基板的集成基板通过

    公开(公告)号：US20100244189A1

    公开(公告)日：2010-09-30

    申请号：US12599494

    申请日：2008-05-08

    申请人： Johan H. Klootwijk ,  Freddy Roozeboom ,  Jaap Ruigrok ,  Derk Reefman

    发明人： Johan H. Klootwijk ,  Freddy Roozeboom ,  Jaap Ruigrok ,  Derk Reefman

    IPC分类号： H01L29/92 ,  H01L21/02

    CPC分类号： H01L27/0805 ,  H01L23/481 ,  H01L28/90 ,  H01L2224/73204

    摘要： An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. —The capacitor-electrode layers are alternatingly connected to a respective one of two capacitor terminals provided on the first or second substrate side. The trench capacitor and the through-substrate via are formed in respective trench openings and via openings in the semiconductor substrate, which have an equal lateral extension exceeding 10 micrometer. This structure allows, among other advantages, a particularly cost-effective fabrication of the integration substrate because the via openings and the trench openings in the substrate can be fabricated simultaneously.

    摘要翻译： 用于封装系统的集成衬底包括贯穿衬底通孔和沟槽电容器，其中沟槽填充物包括与电介质层交替布置的至少四个导电电容器电极层。 - 电容器电极层交替地连接到设置在第一或第二基板侧上的两个电容器端子中的相应一个。 沟槽电容器和贯穿基板通孔形成在半导体衬底中的相应的沟槽开口和通孔中，其具有超过10微米的相等的横向延伸。 除了其它优点之外，这种结构允许一体化衬底的特别成本有效的制造，因为可以同时制造衬底中的通孔开口和沟槽开口。

    ELECTRIC DEVICE COMPRISING AN IMPROVED ELECTRODE
    10.
    发明申请
    ELECTRIC DEVICE COMPRISING AN IMPROVED ELECTRODE 有权
    包含改进电极的电气设备

    公开(公告)号：US20100230787A1

    公开(公告)日：2010-09-16

    申请号：US12299325

    申请日：2007-04-30

    申请人： Lionel Guiraud ,  Francois Lecornec ,  Johan H. Klootwijk ,  Freddy Roozeboom ,  David D. R. Chevrie

    发明人： Lionel Guiraud ,  Francois Lecornec ,  Johan H. Klootwijk ,  Freddy Roozeboom ,  David D. R. Chevrie

    IPC分类号： H01L27/08

    CPC分类号： H01L27/0805 ,  H01L27/10817 ,  H01L27/10829 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/40 ,  H01L28/82 ,  H01L28/90 ,  H01L29/6609 ,  H01L29/66181 ,  H01L29/861

    摘要： The invention relates to an electric device including an electric element, the electric element comprising a first electrode (104) having a first surface (106) and a pillar (108), the pillar extending from the first surface in a first direction (110), the pillar having a length measured from the first surface parallel to the first direction, the pillar having a cross section (116) perpendicular to the first direction and the pillar having a sidewall surface (120) enclosing the pillar and extending in the first direction, characterized in—that, the pillar comprises any one of a score (124) and protrusion (122) extending along at least part of the length of the pillar for giving the pillar (108) improved mechanical stability. The electrode allows electrical elements such as capacitors, energy storage devices or diodes to be made with improved properties in a cost effective way.

    摘要翻译： 本发明涉及一种包括电气元件的电气设备，电气元件包括具有第一表面（106）和柱（108）的第一电极（104），该柱从第一表面沿第一方向（110）延伸， ，所述柱具有从所述第一表面平行于所述第一方向测量的长度，所述柱具有垂直于所述第一方向的横截面（116），所述柱具有封闭所述柱并且沿所述第一方向延伸的侧壁表面（120） 其特征在于，所述支柱包括沿柱的长度的至少一部分延伸的刻痕（124）和突起（122）中的任何一个，以提供支柱（108）改善的机械稳定性。 电极允许以成本有效的方式制造诸如电容器，储能装置或二极管的电气元件，具有改进的性能。