Method and apparatus for purifying silicon
    3.
    发明授权
    Method and apparatus for purifying silicon 失效
    硅纯化方法和装置

    公开(公告)号:US06368403B1

    公开(公告)日:2002-04-09

    申请号:US09512947

    申请日:2000-02-25

    IPC分类号: C30B1318

    摘要: An apparatus for purifying metallurgical grade silicon to produce solar grade silicon has a container for holding molten silicon and one or more torches for providing oxygen and hydrogen gas to heat the molten silicon so that the reaction time is prolonged, to create turbulence, and to introduce silica powder and water vapor for reactions with molten silicon. The molten silicon is then directionally solidified.

    摘要翻译: 用于净化冶金级硅以制造太阳能级硅的装置具有用于保持熔融硅的容器和用于提供氧气和氢气的一个或多个焊枪以加热熔融硅,使得反应时间延长以产生湍流,并引入 二氧化硅粉末和水蒸汽,用于与熔融硅反应。 熔融硅然后定向凝固。

    System and method for crystal growing
    4.
    发明授权
    System and method for crystal growing 有权
    晶体生长的系统和方法

    公开(公告)号:US07918936B2

    公开(公告)日:2011-04-05

    申请号:US11875078

    申请日:2007-10-19

    IPC分类号: C30B29/04

    摘要: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.

    摘要翻译: 为了减少对坩埚底部的热量输入并且独立于热量输入来控制热量提取,当晶体生长时,可以以受控的速度在加热元件和坩埚之间升高屏蔽。 其他步骤可以包括移动坩埚,但这个过程可以避免不得不移动坩埚。 通过仅屏蔽加热元件的一部分来产生温度梯度; 例如,可以屏蔽圆柱形元件的底部以使得在坩埚底部的传热比在顶部更少,从而在坩埚中产生稳定的温度梯度。

    System and method for crystal growing
    5.
    发明授权
    System and method for crystal growing 有权
    晶体生长的系统和方法

    公开(公告)号:US08177910B2

    公开(公告)日:2012-05-15

    申请号:US13037841

    申请日:2011-03-01

    IPC分类号: C30B15/14

    摘要: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.

    摘要翻译: 为了减少对坩埚底部的热量输入并且独立于热量输入来控制热量提取,当晶体生长时,可以以受控的速度在加热元件和坩埚之间升高屏蔽。 其他步骤可以包括移动坩埚,但这个过程可以避免不得不移动坩埚。 通过仅屏蔽加热元件的一部分来产生温度梯度; 例如,可以屏蔽圆柱形元件的底部以使得在坩埚底部的传热比在顶部更少,从而在坩埚中产生稳定的温度梯度。

    Method and Apparatus for Refining Metallurgical Grade Silicon to Produce Solar Grade Silicon
    6.
    发明申请
    Method and Apparatus for Refining Metallurgical Grade Silicon to Produce Solar Grade Silicon 有权
    精炼冶金级硅生产太阳能级硅的方法和装置

    公开(公告)号:US20110217225A1

    公开(公告)日:2011-09-08

    申请号:US12607773

    申请日:2009-10-28

    IPC分类号: C01B33/037 B01J19/00

    摘要: A method and apparatus for refining metallurgical silicon to produce solar grade silicon for use in photovoltaic cells. A crucible in a vacuum furnace receives a mixture of metallurgical silicon and a reducing agent such as calcium disilicide. The mix is melted in non-oxidizing conditions within the furnace under an argon partial pressure. After melting, the argon partial pressure is decreased to produce boiling and the process ends with directional solidification. The process reduces impurities, such as phosphorus, to a level compatible with solar-grade silicon and reduces other impurities significantly.

    摘要翻译: 一种用于精炼冶金硅以生产用于光伏电池的太阳能级硅的方法和设备。 真空炉中的坩埚接收冶金硅和还原剂如二硅化钙的混合物。 混合物在氩气分压下在炉内的非氧化条件下熔化。 熔化后,氩分压降低,产生沸腾,过程以定向凝固结束。 该方法将诸如磷的杂质降低至与太阳能级硅相容的水平,并显着降低其他杂质。

    System and method for crystal growing
    7.
    发明授权
    System and method for crystal growing 有权
    晶体生长的系统和方法

    公开(公告)号:US07344596B2

    公开(公告)日:2008-03-18

    申请号:US11212027

    申请日:2005-08-25

    IPC分类号: C30B11/00 C30B35/00

    摘要: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.

    摘要翻译: 为了减少对坩埚底部的热量输入并且独立于热量输入来控制热量提取,当晶体生长时,可以以受控的速度在加热元件和坩埚之间升高屏蔽。 其他步骤可以包括移动坩埚,但这个过程可以避免不得不移动坩埚。 通过仅屏蔽加热元件的一部分来产生温度梯度; 例如,可以屏蔽圆柱形元件的底部以使得在坩埚底部的传热比在顶部更少,从而在坩埚中产生稳定的温度梯度。