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    Dielectric waveguide-to-coplanar transmission line transitions
    2.
    发明授权
    Dielectric waveguide-to-coplanar transmission line transitions 失效
    介质波导到共面传输线转换

    公开(公告)号：US5225797A

    公开(公告)日：1993-07-06

    申请号：US873796

    申请日：1992-04-27

    申请人： Alison Schary ,  G. Conrad Dalman ,  Charles A. Lee

    发明人： Alison Schary ,  G. Conrad Dalman ,  Charles A. Lee

    IPC分类号： H01P5/10 ,  H01P5/12

    CPC分类号： H01P5/1022 ,  H01P5/12

    摘要： Dielectric waveguide-to-transmission line transition structures are disclosed which can be used to interface low loss dielectric waveguides with integrated electric circuits for operation in millimeter wave frequency ranges on the order of 100 GHz. Numerous transition designs are presented for interfacing signal propagation in rectangular or cylindrical coplanar metallic transmission lines to signal propagation in dielectric waveguides. In one embodiment of the present invention, a transition structure is provided which includes a first transition section for interfacing a dielectric waveguide to a microstrip transmission line, and a second transition section for interfacing the microstrip transmission line to a coplanar transmission line. In other embodiments of the present invention, the dielectric waveguide interfaces directly to a coplanar transmission line. One embodiment employs a "T" junction for splitting a vertically polarized incoming signal in a dielectric waveguide into two horizontally polarized signals for propagation along a coplanar transmission line. Power splitter and polarization rotation structures are also provided in which either signals from a pair of dielectric waveguides can be combined in a single coplanar transmission line or the polarization of a signal can be changed prior to entering a transition structure.

    摘要翻译： 公开了介质波导到传输线过渡结构，其可以用于将低损耗介质波导与集成电路接口，以在大约100GHz的毫米波频率范围内操作。 呈现了许多过渡设计，用于在矩形或圆柱形共面金属传输线中的信号传播接口以在介质波导中信号传播。 在本发明的一个实施例中，提供了一种过渡结构，其包括用于将介质波导连接到微带传输线的第一过渡部分和用于将微带传输线与共面传输线对接的第二过渡部分。 在本发明的其它实施例中，电介质波导直接连接到共面传输线。 一个实施例采用“T”结将电介质波导中的垂直偏振的入射信号分成两个水平偏振信号，以沿共面传输线传播。 还提供功率分配器和偏振旋转结构，其中来自一对介质波导的信号可以在单个共面传输线中组合，或者可以在进入转换结构之前改变信号的极化。

    Ultra-thin semiconductor membranes
    3.
    发明授权
    Ultra-thin semiconductor membranes 失效
    超薄半导体膜

    公开(公告)号：US4952446A

    公开(公告)日：1990-08-28

    申请号：US284822

    申请日：1988-12-14

    申请人： Kevin C. Lee ,  Charles A. Lee ,  John Silcox

    发明人： Kevin C. Lee ,  Charles A. Lee ,  John Silcox

    IPC分类号： H01L21/265 ,  H01L21/3063 ,  H01L21/324 ,  H01L21/425 ,  H01L21/465 ,  H01L21/477

    CPC分类号： H01L21/26506 ,  H01L21/2654 ,  H01L21/3063 ,  H01L21/30635 ,  H01L21/324 ,  H01L21/3245 ,  H01L21/425 ,  H01L21/465 ,  H01L21/477 ,  Y10S148/003 ,  Y10S148/005 ,  Y10S148/042 ,  Y10S148/056 ,  Y10S148/058 ,  Y10S148/064 ,  Y10S148/065 ,  Y10S148/083 ,  Y10S148/119 ,  Y10S148/135 ,  Y10S148/90 ,  Y10S438/924 ,  Y10S438/977 ,  Y10T428/261 ,  Y10T428/266 ,  Y10T428/31 ,  Y10T428/315

    摘要： This invention relates to ultra-thin semiconductor films which can be in the submicron range formed from semiconductor materials such as silicon, germanium and gallium arsenide. The films are formed by creating a thin slightly damaged surface on the polished reverse side of a film (e.g., a wafer) of the semiconductor by low dose ion implantation and then etching the semiconductor material on the front side of the film to remove the semiconductor material down to the ion implanted damaged layer. While the implanted ions can be chosen from functionally desirable ions which upon annealing remain in the film to alter the original electrical characteristics, the implanted ions can also be chosen so that upon annealing, the resultant ultra-thin semiconductor film has the same electrical characteristics as the original semiconductor material.The ion implantation changes the etching characteristics of the ion implanted layer. Thus, when the partially damaged semiconductor material is exposed to an etchant the etching rate in the damaged region is decreased by a factor of several thousand as compared to the undamaged semiconductor material.

    摘要翻译： 本发明涉及可以由诸如硅，锗和砷化镓的半导体材料形成的亚微米范围的超薄半导体膜。 通过低剂量离子注入在半导体的膜（例如，晶片）的抛光反面上形成薄的稍微损伤的表面，然后蚀刻膜前侧的半导体材料以除去半导体， 材料下降到离子植入损伤层。 虽然注入的离子可以从功能上需要的离子中选择，当退火保留在膜中以改变原始电特性时，也可以选择注入的离子，使得在退火时，所得的超薄半导体膜具有与 原来的半导体材料。 离子注入改变离子注入层的蚀刻特性。 因此，当部分损坏的半导体材料暴露于蚀刻剂时，与未损坏的半导体材料相比，损伤区域中的蚀刻速率降低了几千倍。

    Opposed gate-source transistor
    4.
    发明授权
    Opposed gate-source transistor 失效

    公开(公告)号：US4551904A

    公开(公告)日：1985-11-12

    申请号：US618969

    申请日：1984-06-11

    申请人： John J. Berenz ,  G. Conrad Dalman ,  Charles A. Lee

    发明人： John J. Berenz ,  G. Conrad Dalman ,  Charles A. Lee

    IPC分类号： H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/812 ,  H01L29/80

    CPC分类号： H01L29/41775 ,  H01L29/0891 ,  H01L29/42316 ,  H01L29/812

    摘要： A field-effect transistor (FET) and a corresponding method for its fabrication, the transistor having a source and a gate located at opposite faces of an active channel region formed in a substrate, the source being substantially shorter in effective length than the gate and located symmetrically with respect to the gate. The transistor also has two drains, located one at each end of the channel region, and charge carriers flow from the source to the drains in two paths, under control of the same gate. Electrical contact with the source is made from beneath the substrate, while contact with the gate and drains is made from above. The resulting device has a large incremental transconductance and relatively small parasitic impedances, and therefore can operate at much higher frequencies than conventional FET's.

    Material and system for minimizing erosion
    5.
    发明授权
    Material and system for minimizing erosion 失效
    减少侵蚀的材料和系统

    公开(公告)号：US4279535A

    公开(公告)日：1981-07-21

    申请号：US80302

    申请日：1979-10-01

    申请人： Joseph Gagliardi ,  Charles A. Lee

    发明人： Joseph Gagliardi ,  Charles A. Lee

    IPC分类号： E02B3/12 ,  E02D17/20 ,  E02B3/04

    CPC分类号： E02D17/202 ,  E02B3/12

    摘要： A silt fence is provided which includes an elongated first strip of material which was a relatively uniform porosity and which is fabricated from filaments of relatively small diameter. The first strip is attached to an elongated second strip of material which is fabricated from yarns in a grid pattern, the yarns being of relatively large diameter relative to the filaments of the first strip of material and having from about 2 to 8 yarns per inch in each direction. The composite strip has a Frazier air permeability of from about 100 to 1000 cubic feet per square foot per minute at 1/2 inch of water pressure. The material may be provided with a hem in which is disposed a tensioning member.In use the tensioning member in the hem is attached to posts and the other edge of the material is buried in a trench in the ground.

    摘要翻译： 提供了一个粉砂栅栏，其包括细长的第一材料条，其是相对均匀的孔隙率，并由相对较小直径的长丝制成。 第一条带连接到由网格图案的纱线制成的细长的第二材料条，纱线相对于第一条带材的长丝具有相对较大的直径，并且每英寸约2至8根纱线 每个方向 复合条带在1/2英寸水压下具有约100至1000立方英尺每平方英尺每分钟的弗雷泽透气度。 该材料可以设置有在其中设置有张紧构件的褶边。 在使用中，下摆中的张紧构件附接到柱上，并且材料的另一边缘埋在地面上的沟槽中。

    Real time error determination for inertial instruments
    6.
    发明申请
    Real time error determination for inertial instruments 有权
    惯性仪器的实时误差测定

    公开(公告)号：US20090292497A1

    公开(公告)日：2009-11-26

    申请号：US12154104

    申请日：2008-05-20

    申请人： Charles A. Lee

    发明人： Charles A. Lee

    IPC分类号： G01C17/38

    CPC分类号： G01C21/16 ,  G01C25/005 ,  G01P15/08 ,  G01P21/00

    摘要： An exemplary inertial measurement apparatus has first and second inertial instruments that are oriented to have parallel sense axes and that produce respective first and second sensed output signals representative of an inertial attribute to be measured. Respective first and second scale factors are used in producing the first and second sensed output signals. Bias errors in the first and second instruments are estimated using the change in state of sign of the first and second scale factors during the first and succeeding time intervals. To facilitate measurement of bias errors in the first and second instruments, a substitute scale factor is determined to be an equivalent of the second scale factor and is based on the first scale factor and a difference between the first and second scale factors. Errors in the second scale factor are calculated based on the first scale factor and the substitute scale factor during first and succeeding time intervals where a sign of one of first and second scale factors changes from one state during the first time interval to the other state during the succeeding time intervals. First and second corrected output signals are generated based on the respective first and second sensed output signals and correction of said second scale factor error.

    摘要翻译： 示例性的惯性测量装置具有被定向成具有平行的感测轴并且产生表示要测量的惯性属性的相应的第一和第二感测输出信号的第一和第二惯性仪器。 相应的第一和第二比例因子用于产生第一和第二感测输出信号。 在第一和第二仪器中的偏差误差是在第一和第二比例因子在第一和第二比例因子的状态的变化的估计。 为了便于测量第一和第二仪器中的偏差误差，替代比例因子被确定为等于第二比例因子，并且基于第一比例因子和第一和第二比例因子之间的差。 在第一和第二比例因子中的一个的符号在第一时间间隔期间的一个状态从第一时间间隔期间的一个状态改变到另一个状态的第一次和后续时间间隔期间，基于第一比例因子和替代比例因子来计算第二比例因子中的误差 随后的时间间隔。 基于相应的第一和第二感测输出信号和所述第二比例因子误差的校正来生成第一和第二校正输出信号。

    Signal processing system for inertial sensor
    7.
    发明授权
    Signal processing system for inertial sensor 有权
    惯性传感器信号处理系统

    公开(公告)号：US06324909B1

    公开(公告)日：2001-12-04

    申请号：US09431311

    申请日：1999-11-02

    申请人： Stanley F. Wyse ,  Daniel A. Tazartes ,  Juergen K. P. Flamm ,  Charles A. Lee

    发明人： Stanley F. Wyse ,  Daniel A. Tazartes ,  Juergen K. P. Flamm ,  Charles A. Lee

    IPC分类号： G01P904

    CPC分类号： G01C19/5705 ,  G01C19/5776

    摘要： A dithered Coriolis acceleration sensor system has a proof mass that is free of feedback in the accelerometer servo loop at the dither frequency by totally notching out all feedback torque at this frequency. The proof mass relative motion is then a direct measure of the rate because there is no feedback torque to alter the proof mass response to the acceleration. The feedback modulation system according to the invention captures the Coriolis-sensor output such that the phase and gain of the signal generated from the sensor are of no concern in maintaining good scale factor.

    摘要翻译： 抖动的科里奥利加速度传感器系统具有通过在该频率下完全切断所有反馈转矩，以抖动频率在加速度计伺服回路中无反馈的证明质量。 因此，质量相对运动的质量是直接测量速率，因为没有反馈转矩来改变对加速度的质量响应。 根据本发明的反馈调制系统捕获科里奥利传感器输出，使得从传感器产生的信号的相位和增益在保持良好的比例因子方面是不必要的。

    PTM signal generator combining outputs of multiple oscillators
    8.
    发明授权
    PTM signal generator combining outputs of multiple oscillators 失效
    组合多个振荡器的输出的PTM信号发生器

    公开(公告)号：US5808517A

    公开(公告)日：1998-09-15

    申请号：US762852

    申请日：1996-12-10

    申请人： Charles A. Lee ,  G. Conrad Dalman

    发明人： Charles A. Lee ,  G. Conrad Dalman

    IPC分类号： H03B28/00

    CPC分类号： H03B28/00

    摘要： A high frequency pulse-time modulation (PTM) signal generator employs four or more high frequency oscillators which are mutually locked uniquely either in a symmetric mode or an antisymmetric mode by means of a plurality of electronic phase shifters. The output signals from the oscillators are cascaded together to form a PTM output through control of the electronic phase shifters which shift the mutual locking of the oscillators back and forth between the symmetric and antisymmetric modes. Magic-tees or other combining elements are employed to combine the oscillator output signals so that an output pulse is generated when the oscillators are locked in the symmetric mode and a zero level output is generated when the oscillators are locked in the antisymmetric mode.

    摘要翻译： 高频脉冲时间调制（PTM）信号发生器采用四个或更多个通过多个电子移相器以对称模式或反对称模式相互锁定的高频振荡器。 来自振荡器的输出信号通过电子移相器的控制级联在一起形成PTM输出，这些电子移相器在对称和反对称模式之间来回移动振荡器的相互锁定。 采用魔术三通或其他组合元件来组合振荡器输出信号，使得当振荡器被锁定在对称模式中时产生输出脉冲，并且当振荡器被锁定在反对称模式中时产生零电平输出。

    Ultra-thin semiconductor membranes
    10.
    发明授权
    Ultra-thin semiconductor membranes 失效
    超薄半导体膜

    公开(公告)号：US4946735A

    公开(公告)日：1990-08-07

    申请号：US284821

    申请日：1988-12-14

    申请人： Kevin C. Lee ,  Charles A. Lee ,  John Silcox

    发明人： Kevin C. Lee ,  Charles A. Lee ,  John Silcox

    IPC分类号： H01L21/3063 ,  H01L21/324 ,  H01L21/465 ,  H01L21/477

    CPC分类号： H01L21/3063 ,  H01L21/30635 ,  H01L21/324 ,  H01L21/3245 ,  H01L21/465 ,  H01L21/477 ,  Y10S148/003 ,  Y10S148/005 ,  Y10S148/042 ,  Y10S148/056 ,  Y10S148/058 ,  Y10S148/064 ,  Y10S148/065 ,  Y10S148/083 ,  Y10S148/119 ,  Y10S148/135 ,  Y10S148/90 ,  Y10S438/924 ,  Y10S438/977 ,  Y10T428/261 ,  Y10T428/266 ,  Y10T428/31 ,  Y10T428/315

    摘要： This invention relates to ultra-thin semiconductor films which can be in the submicron range formed from semiconductor materials such as silicon, germanium and gallium aresenide. The films are formed by creating a thin slightly damaged surface on the polished reverse side of a film (e.g., a wafer) of the semiconductor by low dose ion implantation and then etching the semiconductor material on the front side of the film to remove the semiconductor material down to the ion implanted damaged layer. While the implanted ions can be chosen from functionally desirable ions which upon annealing remain in the film to alter the original electrical characteristics, the implanted ions can also be chosen so that upon annealing, the resultant ultra-thin semiconductor film has the same electrical characteristics as the original semiconductor material.The ion implantation changes the etching characteristics of the ion implanted layer. Thus, when the partially damaged semiconductor material is exposed to an etchant the etching rate in the damaged region is decreased by a factor of several thousand as compared to the undamagGOVERNMENT FUNDINGThe invention described and claimed herein was at least in part supported by the National Submicron Facility under NSF Grant #ECS-8200312 to the NRRFSS.

    摘要翻译： 本发明涉及可以由半导体材料如硅，锗和砷化镓形成的亚微米范围的超薄半导体膜。 通过低剂量离子注入在半导体的膜（例如，晶片）的抛光反面上形成薄的稍微损伤的表面，然后蚀刻膜前侧的半导体材料以除去半导体， 材料下降到离子植入损伤层。 虽然注入的离子可以从功能上需要的离子中选择，当退火保留在膜中以改变原始电特性时，也可以选择注入的离子，使得在退火时，所得的超薄半导体膜具有与 原来的半导体材料。 离子注入改变离子注入层的蚀刻特性。 因此，当部分损坏的半导体材料暴露于蚀刻剂时，与未损坏的半导体材料相比，损伤区域中的蚀刻速率降低了几千倍。