公开(公告)号：US20170084524A1

公开(公告)日：2017-03-23

申请号：US15046652

申请日：2016-02-18

Applicant: Freescale Semiconductor, Inc.

Inventor： Igor Ivanovich BLEDNOV

IPC: H01L23/498 ,  H01L21/48 ,  H01L29/78

CPC classification number: H01L23/49811 ,  H01L21/486 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49844 ,  H01L23/50 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L25/16 ,  H01L29/7816 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6688 ,  H01L2224/04042 ,  H01L2224/48139 ,  H01L2224/48195 ,  H01L2224/4846 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A semiconductor die comprising a terminal structure for an active power device. The terminal structure comprises a metallic layer arranged to be electrically coupled between the active power device and an external contact of an integrated circuit package, a conductive sub-structure extending in parallel with the metallic layer, and located such that, when mounted within an integrated circuit device, the conductive sub-structure lies between the metallic layer and a reference voltage plane, and interconnecting elements extending between the metallic layer and the conductive sub-structure and electrically coupling the metallic layer to the conductive sub-structure. The plurality of interconnecting elements comprise first and second interconnecting elements extending between first and second lateral end regions of the metallic layer and the conductive sub-structure respectively such that the first and second interconnecting elements are laterally spaced with respect to the direction of travel of the fundamental signal for the active power device.