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1.发明授权Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation 失效半导体晶片预处理退火和吸收太阳能电池形成的方法和系统公开(公告)号：US08316745B2
公开(公告)日：2012-11-27
申请号：US13218632
申请日：2011-08-26
IPC分类号： B26D7/06
CPC分类号： H01L31/18 , H01L21/304 , H01L21/3221 , H01L31/186 , Y02E10/50 , Y02P70/521 , Y10T83/04 , Y10T83/0453
摘要： Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant layer on the solar cell semiconductor (e.g., silicon) wafer. A surface of the semiconductor wafer receives and holds impurities, as does the surface contaminant layer. The lower-quality semiconductor wafer includes dispersed defects that in an annealing process getter from the semiconductor bulk to form impurity cluster toward the surface contaminant layer. The impurity clusters form within the surface contaminant layer while increasing the purity level in wafer regions from which the dispersed defects gettered. Cooling follows annealing for retaining the impurity clusters and, thereby, maintaining the increased purity level of the semiconductor wafer in regions from which the impurities gettered. Multicrystalline semiconductor wafers having grain boundaries with impurities may also undergo the annealing and gettering of dispersed defects to the grain boundaries, further increasing the semiconductor substrate purity levels.
摘要翻译： 这里公开了用于退火和吸收太阳能电池半导体晶片的太阳能电池预处理方法和系统的技术，所述太阳能电池半导体晶片具有不希望的高过渡金属，杂质和其它缺陷的分散。 该工艺在太阳能电池半导体（例如硅）晶片上形成表面污染物层。 半导体晶片的表面与表面污染物层一样接收和保持杂质。 较低质量的半导体晶片包括在退火工艺中从半导体体积吸收而形成杂质簇朝向表面污染物层的分散缺陷。 杂质簇形成在表面污染物层内，同时增加晶片区域中的纯度水平，分散的缺陷从该区域中得到。 通过冷却进行退火以保留杂质簇，从而在杂质吸收的区域保持半导体晶片的增加的纯度水平。 具有杂质晶界的多晶半导体晶片也可以经历退火和吸收分散的缺陷到晶界，进一步提高半导体衬底纯度水平。
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公开(公告)号：US07887633B2
公开(公告)日：2011-02-15
申请号：US12140104
申请日：2008-06-16
申请人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Anis Jouini , Dieter Linke , Martin Kaes , Jean Patrice Rakotoniaina , Kamel Ounadjela
发明人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Anis Jouini , Dieter Linke , Martin Kaes , Jean Patrice Rakotoniaina , Kamel Ounadjela
CPC分类号： C30B29/06 , C30B11/00 , C30B11/04 , C30B11/08 , C30B13/00 , C30B13/08 , C30B13/10 , C30B15/00 , C30B15/02 , C30B15/04 , C30B29/52 , H01L31/028 , Y02E10/547 , Y10T117/1024 , Y10T117/1068
摘要： Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.
摘要翻译： 描述了使用各种等级的硅原料形成硅锭和晶体的技术。 共同的特征是向熔体中加入预定量的锗并进行结晶以将锗掺入到各自晶体硅材料的硅晶格中。 这种掺入的锗导致各种硅材料特性的改善，主要是提高材料强度。 这导致在太阳能电池制造中应用这种材料以及从这些太阳能电池制造模块方面的积极作用。 锗浓度在（50-200）ppmw范围内的硅材料表现出增加的材料强度，其中最佳实用范围取决于所产生的材料质量。
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公开(公告)号：US20090308455A1
公开(公告)日：2009-12-17
申请号：US12140104
申请日：2008-06-16
申请人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Anis Jouini , Dieter Linke , Martin Kaes , Jean Patrice Rakotoniaina , Kamel Ounadjela
发明人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Anis Jouini , Dieter Linke , Martin Kaes , Jean Patrice Rakotoniaina , Kamel Ounadjela
CPC分类号： C30B29/06 , C30B11/00 , C30B11/04 , C30B11/08 , C30B13/00 , C30B13/08 , C30B13/10 , C30B15/00 , C30B15/02 , C30B15/04 , C30B29/52 , H01L31/028 , Y02E10/547 , Y10T117/1024 , Y10T117/1068
摘要： Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.
摘要翻译： 描述了使用各种等级的硅原料形成硅锭和晶体的技术。 共同的特征是向熔体中加入预定量的锗并进行结晶以将锗掺入到各自晶体硅材料的硅晶格中。 这种掺入的锗导致各种硅材料特性的改善，主要是提高材料强度。 这导致在太阳能电池制造中应用这种材料以及从这些太阳能电池制造模块方面的积极作用。 锗浓度在（50-200）ppmw范围内的硅材料表现出增加的材料强度，其中最佳实用范围取决于所产生的材料质量。
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4.发明申请SEMICONDUCTOR WAFER PRE-PROCESS ANNEALING AND GETTERING METHOD AND SYSTEM FOR SOLAR CELL FORMATION 失效半导体波形预处理退火和获取太阳能电池形成的方法和系统公开(公告)号：US20110309478A1
公开(公告)日：2011-12-22
申请号：US13218632
申请日：2011-08-26
IPC分类号： H01L29/30 , H01L21/306
CPC分类号： H01L31/18 , H01L21/304 , H01L21/3221 , H01L31/186 , Y02E10/50 , Y02P70/521 , Y10T83/04 , Y10T83/0453
摘要： Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant layer on the solar cell semiconductor (e.g., silicon) wafer. A surface of the semiconductor wafer receives and holds impurities, as does the surface contaminant layer. The lower-quality semiconductor wafer includes dispersed defects that in an annealing process getter from the semiconductor bulk to form impurity cluster toward the surface contaminant layer. The impurity clusters form within the surface contaminant layer while increasing the purity level in wafer regions from which the dispersed defects gettered. Cooling follows annealing for retaining the impurity clusters and, thereby, maintaining the increased purity level of the semiconductor wafer in regions from which the impurities gettered. Multicrystalline semiconductor wafers having grain boundaries with impurities may also undergo the annealing and gettering of dispersed defects to the grain boundaries, further increasing the semiconductor substrate purity levels.
摘要翻译： 这里公开了用于退火和吸收太阳能电池半导体晶片的太阳能电池预处理方法和系统的技术，所述太阳能电池半导体晶片具有不期望的高过渡金属，杂质和其它缺陷的分散。 该工艺在太阳能电池半导体（例如硅）晶片上形成表面污染物层。 半导体晶片的表面与表面污染物层一样接收和保持杂质。 较低质量的半导体晶片包括在退火工艺中从半导体体积吸收而形成杂质簇朝向表面污染物层的分散缺陷。 杂质簇形成在表面污染物层内，同时增加晶片区域中的纯度水平，分散的缺陷从该区域中得到。 通过冷却进行退火以保留杂质簇，从而在杂质吸收的区域保持半导体晶片的增加的纯度水平。 具有杂质晶界的多晶半导体晶片也可以经历退火和吸收分散的缺陷到晶界，进一步提高半导体衬底纯度水平。
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5.发明申请METHOD AND SYSTEM FOR FORMING A SILICON INGOT USING A LOW-GRADE SILICON FEEDSTOCK 有权使用低等级硅胶进料形成硅胶的方法和系统公开(公告)号：US20110211995A1
公开(公告)日：2011-09-01
申请号：US13034956
申请日：2011-02-25
申请人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Dieter Linke , Jean Patrice Rakotoniana , Kamel Ounadjela
发明人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Dieter Linke , Jean Patrice Rakotoniana , Kamel Ounadjela
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T117/1024
摘要： Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.
摘要翻译： 使用低等级硅原料形成硅锭的技术包括在坩埚装置内形成来自低品位硅原料的熔融硅，并执行熔融硅的定向凝固，以在坩埚装置内形成硅锭。 定向凝固形成通常固化的硅和一般熔融量的硅。 该方法和系统包括从坩埚装置移除至少一部分一般熔融的硅，同时在坩埚装置内保持大致固化的硅量。 控制一般凝固量的硅的定向凝固，同时去除更多污染的熔融硅，导致硅锭具有比低等级硅原料更高级别的硅。
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6.发明申请LARGE GRAIN, MULTI-CRYSTALLINE SEMICONDUCTOR INGOT FORMATION METHOD AND SYSTEM 审中-公开大颗粒，多晶半导体成像方法与系统公开(公告)号：US20080257254A1
公开(公告)日：2008-10-23
申请号：US11736390
申请日：2007-04-17
IPC分类号： C30B15/20
CPC分类号： C30B11/002 , C01B33/037 , C30B11/003 , C30B28/06 , C30B29/06 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T117/1008
摘要： Techniques for the formation of a large grain, multi-crystalline semiconductor ingot and include forming a silicon melt in a crucible, the crucible capable of locally controlling thermal gradients within the silicon melt. The local control of thermal gradients preferentially forms silicon crystals in predetermined regions within the silicon melt by locally reducing temperatures is the predetermined regions. The method and system control the rate at which the silicon crystals form using local control of thermal gradients for inducing the silicon crystals to obtain preferentially maximal sizes and, thereby, reducing the number of grains for a given volume. The process continues the thermal gradient control and the rate control step to form a multicrystalline silicon ingot having reduced numbers of grains for a given volume of the silicon ingot.
摘要翻译： 用于形成大晶粒多晶半导体锭的技术包括在坩埚中形成硅熔体，所述坩埚能够局部地控制硅熔体内的热梯度。 热梯度的局部控制优先在硅熔体内的预定区域中形成硅晶体，其中局部还原温度是预定区域。 该方法和系统通过局部控制热梯度来控制硅晶体的形成速率，以诱导硅晶体优先获得最大尺寸，从而减少给定体积的晶粒数。 该过程继续进行热梯度控制和速率控制步骤以形成对于给定体积的硅锭具有减少的晶粒数量的多晶硅锭。
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7.发明授权Method and system for forming a silicon ingot using a low-grade silicon feedstock 有权使用低等级硅原料形成硅锭的方法和系统公开(公告)号：US07955433B2
公开(公告)日：2011-06-07
申请号：US11828734
申请日：2007-07-26
申请人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Dieter Linke , Jean Patrice Rakotoniana , Kamel Ounadjela
发明人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Dieter Linke , Jean Patrice Rakotoniana , Kamel Ounadjela
IPC分类号： C01B33/02 , C01B33/037 , C30B15/10 , C30B15/12
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T117/1024
摘要： Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.
摘要翻译： 使用低等级硅原料形成硅锭的技术包括在坩埚装置内形成来自低品位硅原料的熔融硅，并执行熔融硅的定向凝固，以在坩埚装置内形成硅锭。 定向凝固形成通常固化的硅和一般熔融量的硅。 该方法和系统包括从坩埚装置移除至少一部分一般熔融的硅，同时在坩埚装置内保持大致固化的硅量。 控制一般凝固量的硅的定向凝固，同时去除更多污染的熔融硅，导致硅锭具有比低等级硅原料更高级别的硅。
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8.发明申请METHOD AND SYSTEM FOR FORMING A SILICON INGOT USING A LOW-GRADE SILICON FEEDSTOCK 有权使用低等级硅胶进料形成硅胶的方法和系统公开(公告)号：US20090028773A1
公开(公告)日：2009-01-29
申请号：US11828734
申请日：2007-07-26
申请人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Dieter Linke , Jean Patrice Rakotoniana , Kamel Ounadjela
发明人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Dieter Linke , Jean Patrice Rakotoniana , Kamel Ounadjela
IPC分类号： C01B33/037 , B01J19/02
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T117/1024
摘要： Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.
摘要翻译： 使用低等级硅原料形成硅锭的技术包括在坩埚装置内形成来自低品位硅原料的熔融硅，并执行熔融硅的定向凝固，以在坩埚装置内形成硅锭。 定向凝固形成通常固化的硅和一般熔融量的硅。 该方法和系统包括从坩埚装置移除至少一部分一般熔融的硅，同时在坩埚装置内保持大致固化的硅量。 控制一般凝固量的硅的定向凝固，同时去除更多污染的熔融硅，导致硅锭具有比低等级硅原料更高级别的硅。
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9.发明授权Method and system for forming a silicon ingot using a low-grade silicon feedstock 有权使用低等级硅原料形成硅锭的方法和系统公开(公告)号：US08882912B2
公开(公告)日：2014-11-11
申请号：US13034956
申请日：2011-02-25
申请人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Dieter Linke , Jean Patrice Rakotoniana , Kamel Ounadjela
发明人： Fritz Kirscht , Vera Abrosimova , Matthias Heuer , Dieter Linke , Jean Patrice Rakotoniana , Kamel Ounadjela
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T117/1024
摘要： Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.
摘要翻译： 使用低等级硅原料形成硅锭的技术包括在坩埚装置内形成来自低品位硅原料的熔融硅，并执行熔融硅的定向凝固，以在坩埚装置内形成硅锭。 定向凝固形成通常固化的硅和一般熔融量的硅。 该方法和系统包括从坩埚装置移除至少一部分一般熔融的硅，同时在坩埚装置内保持大致固化的硅量。 控制一般凝固量的硅的定向凝固，同时去除更多污染的熔融硅，导致硅锭具有比低等级硅原料更高级别的硅。
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10.发明授权Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation 有权半导体晶片预处理退火和吸收太阳能电池形成的方法和系统公开(公告)号：US08008107B2
公开(公告)日：2011-08-30
申请号：US11648127
申请日：2006-12-30
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , H01L21/304 , H01L21/3221 , H01L31/186 , Y02E10/50 , Y02P70/521 , Y10T83/04 , Y10T83/0453
摘要： Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant layer on the solar cell semiconductor (e.g., silicon) wafer. A surface of the semiconductor wafer receives and holds impurities, as does the surface contaminant layer. The lower-quality semiconductor wafer includes dispersed defects that in an annealing process getter from the semiconductor bulk to form impurity cluster toward the surface contaminant layer. The impurity clusters form within the surface contaminant layer while increasing the purity level in wafer regions from which the dispersed defects gettered. Cooling follows annealing for retaining the impurity clusters and, thereby, maintaining the increased purity level of the semiconductor wafer in regions from which the impurities gettered. Multicrystalline semiconductor wafers having grain boundaries with impurities may also undergo the annealing and gettering of dispersed defects to the grain boundaries, further increasing the semiconductor substrate purity levels.
摘要翻译： 这里公开了用于退火和吸收太阳能电池半导体晶片的太阳能电池预处理方法和系统的技术，所述太阳能电池半导体晶片具有不期望的高过渡金属，杂质和其它缺陷的分散。 该工艺在太阳能电池半导体（例如硅）晶片上形成表面污染物层。 半导体晶片的表面与表面污染物层一样接收和保持杂质。 较低质量的半导体晶片包括在退火工艺中从半导体体积吸收而形成杂质簇朝向表面污染物层的分散缺陷。 杂质簇形成在表面污染物层内，同时增加晶片区域中的纯度水平，分散的缺陷从该区域中得到。 通过冷却进行退火以保留杂质簇，从而在杂质吸收的区域保持半导体晶片的增加的纯度水平。 具有杂质晶界的多晶半导体晶片也可以经历退火和吸收分散的缺陷到晶界，进一步提高半导体衬底纯度水平。
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