公开(公告)号：US20020094677A1

公开(公告)日：2002-07-18

申请号：US10044979

申请日：2002-01-15

申请人： Fujitsu Quantum Devices Limited

发明人： Akira Furuya ,  Chikashi Anayama ,  Katsumi Sugiura ,  Kensei Nakao ,  Taro Hasegawa

IPC分类号： H01L021/44

CPC分类号： B82Y20/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/2201 ,  H01S5/2238 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2304/04

摘要： In the S3-type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is null1, an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is null2, an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is null3, and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the fourth layer of the first conduction type cladding layer is null4, relationships null1 null3, null3