公开(公告)号：US09142619B2

公开(公告)日：2015-09-22

申请号：US13704963

申请日：2011-11-25

申请人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

发明人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

IPC分类号： H01L29/16 ,  H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32

CPC分类号： H01L29/1608 ,  H01L21/02107 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

摘要： [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced.[Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

摘要翻译： [问题]提供可以精确地减少半导体层中的位错密度的III族氮化物半导体器件及其制造方法。 [解决方案]在制造III族氮化物半导体器件1中，在衬底20上形成掩模层40，然后通过掩模层40的图案44选择性地生长由III族氮化物半导体制成的纳米柱50，以生长 掩模层40上的III族氮化物半导体层10。

公开(公告)号：US09117967B2

公开(公告)日：2015-08-25

申请号：US14241047

申请日：2012-08-29

申请人： Fumiharu Teramae ,  Koichi Naniwae ,  Tsukasa Kitano ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Midori Mori

发明人： Fumiharu Teramae ,  Koichi Naniwae ,  Tsukasa Kitano ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Midori Mori

IPC分类号： H01L21/00 ,  H01L31/18 ,  C03C15/00 ,  C03C17/36 ,  H01L31/0236

CPC分类号： H01L31/1884 ,  C03C15/00 ,  C03C17/36 ,  C03C17/3678 ,  C03C2218/34 ,  H01L31/02366 ,  Y02E10/50

摘要： [Problem] A problem is to provide a method of manufacturing a glass substrate with a concave-convex film using dry etching capable of giving a fine concave-convex structure precisely by dry etching, a glass substrate with a concave-convex structure, a solar cell, and a method of manufacturing a solar cell.[Means to Solve the Problem] In order to give a concave-convex structure to a glass substrate made of a plurality of oxides placed in different vapor pressures during dry etching, a subject film forming step and a concave-convex structure forming step are provided. The subject film forming step forms a subject film made of a single material on a flat surface of the glass substrate. The concave-convex structure forming step forms a periodic concave-convex structure in a surface of the subject film by dry etching. As a result, a fine concave-convex structure is formed precisely by dry etching.

摘要翻译： 问题在于提供一种使用能够通过干蚀刻精确地赋予微细凹凸结构的干法蚀刻的凹凸膜的制造方法，具有凹凸结构的玻璃基板，太阳能 电池，以及太阳能电池的制造方法。 解决问题的手段为了在干法蚀刻期间对由放置在不同蒸气压中的多种氧化物制成的玻璃基板赋予凹凸结构，提供目标成膜步骤和凹凸结构形成步骤 。 本发明的膜形成步骤在玻璃基板的平坦表面上形成由单一材料制成的被膜。 凹凸结构形成工序通过干式蚀刻在本体膜的表面形成周期性凹凸结构。 结果，通过干蚀刻精确地形成精细的凹凸结构。

公开(公告)号：US20130126907A1

公开(公告)日：2013-05-23

申请号：US13704963

申请日：2011-11-25

申请人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

发明人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

IPC分类号： H01L29/16 ,  H01L21/02

CPC分类号： H01L29/1608 ,  H01L21/02107 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

摘要： [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced.[Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

摘要翻译： [问题]提供可以精确地减少半导体层中的位错密度的III族氮化物半导体器件及其制造方法。 [解决方案]在制造III族氮化物半导体器件1中，在衬底20上形成掩模层40，然后通过掩模层40的图案44选择性地生长由III族氮化物半导体制成的纳米柱50，以生长 掩模层40上的III族氮化物半导体层10。

公开(公告)号：US20140170799A1

公开(公告)日：2014-06-19

申请号：US14241047

申请日：2012-08-29

申请人： Fumiharu Teramae ,  Koichi Maniwae ,  Tsukasa Kitano ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Midori Mori

发明人： Fumiharu Teramae ,  Koichi Maniwae ,  Tsukasa Kitano ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Midori Mori

IPC分类号： H01L31/18

CPC分类号： H01L31/1884 ,  C03C15/00 ,  C03C17/36 ,  C03C17/3678 ,  C03C2218/34 ,  H01L31/02366 ,  Y02E10/50

摘要： [Problem] A problem is to provide a method of manufacturing a glass substrate with a concave-convex film using dry etching capable of giving a fine concave-convex structure precisely by dry etching, a glass substrate with a concave-convex structure, a solar cell, and a method of manufacturing a solar cell.[Means to Solve the Problem] In order to give a concave-convex structure to a glass substrate made of a plurality of oxides placed in different vapor pressures during dry etching, a subject film forming step and a concave-convex structure forming step are provided. The subject film forming step forms a subject film made of a single material on a flat surface of the glass substrate. The concave-convex structure forming step forms a periodic concave-convex structure in a surface of the subject film by dry etching. As a result, a fine concave-convex structure is formed precisely by dry etching.

摘要翻译： 问题在于提供一种使用能够通过干蚀刻精确地赋予微细凹凸结构的干法蚀刻的凹凸膜的制造方法，具有凹凸结构的玻璃基板，太阳能 电池，以及太阳能电池的制造方法。 解决问题的手段为了在干法蚀刻期间对由放置在不同蒸气压中的多种氧化物制成的玻璃基板赋予凹凸结构，提供目标成膜步骤和凹凸结构形成步骤 。 本发明的膜形成步骤在玻璃基板的平坦表面上形成由单一材料制成的被膜。 凹凸结构形成工序通过干式蚀刻在本体膜的表面形成周期性凹凸结构。 结果，通过干蚀刻精确地形成精细的凹凸结构。

公开(公告)号：US20110002310A1

公开(公告)日：2011-01-06

申请号：US12667328

申请日：2008-07-03

申请人： Midori Mori ,  Koji Omae

发明人： Midori Mori ,  Koji Omae

IPC分类号： H04J3/00

CPC分类号： H04W56/0045

摘要： In adjusting transmission timings of frames sequentially transmitted from a radio network controller to a base transceiver station, the frame transmission schedule is changed in appropriate manner in response to a necessary Timing Adjustment control frame (TA). In a first period of time, which is a period of ignoring the received TA, the adjustment of the transmission timings of the frames is suspended. Also, out of the first period, the first period is varied in accordance with a variety of the delayed amount in transmission between the radio network controller and the base transceiver station. There is provided a period of ignoring a first control frame to be informed from the radio base transceiver station to the radio network controller. By setting the period to be a variable value, the synchronisation control is accomplished with certainty.

摘要翻译： 在调整从无线网络控制器顺序发送到基地收发台的帧的发送定时时，响应于必要的定时调整控制帧（TA），以适当的方式改变帧发送调度。 在忽略接收到的TA的第一时间段中，帧的发送定时的调整被暂停。 此外，在第一时段之内，第一时段根据无线电网络控制器和基站之间的传输延迟量的不同而变化。 提供忽略要从无线电基站收发器向无线电网络控制器通知的第一控制帧的时段。 通过将周期设置为可变值，可以确定地实现同步控制。

公开(公告)号：US20130072194A1

公开(公告)日：2013-03-21

申请号：US13642687

申请日：2011-04-21

申请人： Hiroto Tooyama ,  Yoshifumi Morihiro ,  Kouji Makino ,  Midori Mori

发明人： Hiroto Tooyama ,  Yoshifumi Morihiro ,  Kouji Makino ,  Midori Mori

IPC分类号： H04W36/00

CPC分类号： H04W36/02 ,  H04W28/02 ,  H04W36/14

摘要： A second communication system starts transmission of direct data received from a core network apparatus without waiting to receive an end marker when the end marker indicating the last forwarding data forwarded from the first communication system is not received within an end marker waiting period.

摘要翻译： 第二通信系统开始发送从核心网络装置接收的直接数据，而不等待在结束标记等待期间内接收到指示从第一通信系统转发的最后转发数据的结束标记的结束标记，而不等待接收结束标记。

公开(公告)号：US08532662B2

公开(公告)日：2013-09-10

申请号：US13642687

申请日：2011-04-21

申请人： Hiroto Tooyama ,  Yoshifumi Morihiro ,  Kouji Makino ,  Midori Mori

发明人： Hiroto Tooyama ,  Yoshifumi Morihiro ,  Kouji Makino ,  Midori Mori

IPC分类号： H04W36/00

CPC分类号： H04W36/02 ,  H04W28/02 ,  H04W36/14

摘要： A second communication system starts transmission of direct data received from a core network apparatus without waiting to receive an end marker when the end marker indicating the last forwarding data forwarded from the first communication system is not received within an end marker waiting period.

摘要翻译： 第二通信系统开始发送从核心网络装置接收到的直接数据，而不用在结束标记等待期间内没有接收到指示从第一通信系统转发的最后转发数据的结束标记的结束标记的情况下等待接收结束标记。

公开(公告)号：US08311019B2

公开(公告)日：2012-11-13

申请号：US12667328

申请日：2008-07-03

申请人： Midori Mori ,  Koji Omae

发明人： Midori Mori ,  Koji Omae

IPC分类号： H04J3/00

CPC分类号： H04W56/0045

摘要： In adjusting transmission timings of frames sequentially transmitted from a radio network controller to a base transceiver station, the frame transmission schedule is changed in appropriate manner in response to a necessary Timing Adjustment control frame (TA). In a first period of time, which is a period of ignoring the received TA, the adjustment of the transmission timings of the frames is suspended. Also, out of the first period, the first period is varied in accordance with a variety of the delayed amount in transmission between the radio network controller and the base transceiver station. There is provided a period of ignoring a first control frame to be informed from the radio base transceiver station to the radio network controller. By setting the period to be a variable value, the synchronization control is accomplished with certainty.

摘要翻译： 在调整从无线网络控制器顺序发送到基地收发台的帧的发送定时时，响应于必要的定时调整控制帧（TA），以适当的方式改变帧发送调度。 在忽略接收到的TA的第一时间段中，帧的发送定时的调整被暂停。 此外，在第一时段之内，第一时段根据无线电网络控制器和基站之间的传输延迟量的不同而变化。 提供忽略要从无线电基站收发器向无线电网络控制器通知的第一控制帧的时段。 通过将周期设置为可变值，可以确定地实现同步控制。

公开(公告)号：US06870266B2

公开(公告)日：2005-03-22

申请号：US10642281

申请日：2003-08-18

申请人： Masateru Nakamura ,  Midori Mori

发明人： Masateru Nakamura ,  Midori Mori

IPC分类号： H01L31/04 ,  H01L29/12 ,  H01L29/40 ,  H01L31/0224 ,  H01L31/0256 ,  H01L31/075 ,  H01M14/00

CPC分类号： H01G9/2031 ,  H01G9/2059 ,  Y02E10/542 ,  Y02P70/521

摘要： The present invention provides an oxide semiconductor electrode which can realize a combination of high transparency with large surface area and is highly responsive to ultraviolet light, as well as to visible light. The oxide semiconductor electrode comprises a conductive substrate and an oxide semiconductor layer provided on the conductive substrate. The oxide semiconductor layer is a porous layer comprising porous titania particles which have been joined to each other to define interparticulate communicating pores. Preferably, the pores possessed by the titania particles per se have a diameter of 10 to 40 nm, the interparticulate communicating pores have a diameter of 10 to 70 nm, and the titania particles have an average diameter of 10 to 70 nm.

摘要翻译： 本发明提供一种氧化物半导体电极，其能够实现高透明度和大表面积的组合，并且对紫外光以及可见光具有高度响应性。 氧化物半导体电极包括导电基板和设置在导电基板上的氧化物半导体层。 氧化物半导体层是包含多孔二氧化钛颗粒的多孔层，它们彼此连接以限定双晶间连通孔。 优选地，二氧化钛颗粒本身具有的直径为10至40nm，颗粒间连通孔的直径为10至70nm，并且二氧化钛颗粒的平均直径为10至70nm。