Optical disk of sampled servo type having synchronization a marks for
simple synchronization detection
    2.
    发明授权
    Optical disk of sampled servo type having synchronization a marks for simple synchronization detection 失效
    具有同步的采样伺服型光盘,用于简单的同步检测

    公开(公告)号:US5600626A

    公开(公告)日:1997-02-04

    申请号:US343946

    申请日:1994-11-17

    摘要: An optical disk with tracks having a sampled servo type recording format, and comprising a preformatted servo field including a synchronous mark for synchronization detection and a data field for recording data on each track. In the optical disk, the synchronous marks are aligned in the same radial direction of the disk per track and have the edge interval longer than the maximum inversion interval of the mark for the data in the track direction, and the interval of the synchronous mark between the adjacent tracks is made smaller than the spot diameter of a reading beam. Hence, in the radial direction of the disk where the synchronous marks are present, the synchronous mark is included in the spot of the reading beam of a pickup irrespective of being on-track or off-track to make it possible to obtain substantially the same level for synchronous signals.

    摘要翻译: 具有采样伺服型记录格式的轨道的光盘,​​包括预先格式化的伺服字段,包括用于同步检测的同步标记和用于在每个轨道上记录数据的数据字段。 在光盘中,同步标记在每个磁道的磁盘的径向相同的方向上对齐,并且具有比轨道方向上的数据的标记的最大反转间隔更长的边缘间隔,以及在轨道方向上的同步标记的间隔 使相邻的轨道小于读取光束的光斑直径。 因此,在存在同步标记的盘的径向方向上,同时标记被包括在拾取器的读取光束的光点中,而不管是在轨道还是偏离轨道,以使得可以获得基本相同 同步信号电平。

    Digital signal reproducing apparatus for reproducing digital signals
from a recording medium
    4.
    发明授权
    Digital signal reproducing apparatus for reproducing digital signals from a recording medium 失效
    用于从记录介质再现数字信号的数字信号再现装置

    公开(公告)号:US5440532A

    公开(公告)日:1995-08-08

    申请号:US230817

    申请日:1994-04-21

    摘要: A digital signal reproducing apparatus is capable of reproducing digital signals with an accurate sampling clock synchronized with the phase of a read signal. A sequence of predetermined sampled values are detected from sampled values produced by A/D converting a read signal. In this sequence of predetermined sampled values, a difference value of two samples produced at timings spaced apart by a predetermined interval from each other is calculated in order to generate a sampling clock having the phase corrected on the basis of the difference value.

    摘要翻译: 数字信号再现装置能够以与读取信号的相位同步的精确采样时钟再现数字信号。 从通过A / D转换读取信号产生的采样值来检测预定采样值的序列。 在这个预定采样值序列中,计算在彼此间隔开预定间隔的定时处产生的两个采样的差值,以便产生基于差值校正的相位的采样时钟。

    MEDICAL TISSUE-MARKER AND MANUFACTURING METHOD FOR THE SAME
    5.
    发明申请
    MEDICAL TISSUE-MARKER AND MANUFACTURING METHOD FOR THE SAME 有权
    医用组织标记及其制造方法

    公开(公告)号:US20140219924A1

    公开(公告)日:2014-08-07

    申请号:US14126034

    申请日:2012-05-31

    IPC分类号: A61K49/00 A61K49/04

    摘要: The present invention is to provide a medical tissue-marker which enables the identification of a location even from the outside of an organ, can remain topical over a long period, and enables the easy identification of a marked location within the whole organ; also to provide a manufacturing method for the medical tissue-marker. The medical tissue-marker as in the present invention includes a vesicle formed by the synthesis of a phospholipid and a near infrared fluorescent dye, and an emulsion formed by the synthesis of the phospholipid and an X-ray contrast medium, and has agglomerated clusters wherein the vesicle and the emulsion are contained in a hydrophilic solvent and a plurality of capsules are formed by means of an emulsifier.

    摘要翻译: 本发明提供一种能够从器官外部识别位置的医疗组织标记物,能够长时间保持局部,能够容易地识别整个器官内的标记位置; 也提供了用于医疗组织标记物的制造方法。 本发明中的医疗用组织标记物包括通过合成磷脂和近红外荧光染料形成的囊泡,以及通过合成磷脂和X射线造影剂形成的乳液,并且具有团聚体,其中, 囊泡和乳液包含在亲水溶剂中,并且通过乳化剂形成多个胶囊。

    Silicon carbide semiconductor device
    6.
    发明授权
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号:US08766278B2

    公开(公告)日:2014-07-01

    申请号:US13565388

    申请日:2012-08-02

    申请人: Hideki Hayashi

    发明人: Hideki Hayashi

    IPC分类号: H01L29/15 H01L21/8238

    CPC分类号: H01L27/088 H01L21/8213

    摘要: First, second, fourth, and fifth impurity regions have a first conductivity type, and a third impurity region has a second conductivity type. The first to third impurity regions reach a first layer having the first conductivity type. The fourth and fifth impurity regions are provided on a second layer. First to fifth electrodes are provided on the first to fifth impurity regions, respectively. Electrical connection is established between the first and fifth electrodes, and between the third and fourth electrodes. A sixth electrode is provided on a gate insulating film covering a portion between the fourth and fifth impurity regions.

    摘要翻译: 第一,第二,第四和第五杂质区具有第一导电类型,第三杂质区具有第二导电类型。 第一至第三杂质区域到达具有第一导电类型的第一层。 第四和第五杂质区设置在第二层上。 第一至第五电极分别设置在第一至第五杂质区上。 在第一和第五电极之间以及第三和第四电极之间建立电连接。 第六电极设置在覆盖第四和第五杂质区域之间的部分的栅极绝缘膜上。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US08618823B2

    公开(公告)日:2013-12-31

    申请号:US13006325

    申请日:2011-01-13

    IPC分类号: G01R31/28

    摘要: A semiconductor device is designed to facilitate analyzing a position and a cause of the failure of an integrated circuit adopting a polyphase clock. To this end, the semiconductor device is provided with an error detecting unit that detects that a problem of the operation occurs in the integrated circuit, a clock state holding unit that holds the information of phases in a predetermined term of a two- or more-phase clock and an output unit that outputs the information of the phases in the predetermined term of the two- or more-phase clock when the error detecting unit detects that the problem of the operation occurs in the integrated circuit.

    摘要翻译: 半导体器件被设计为便于分析采用多相时钟的集成电路的故障的位置和原因。 为此,半导体器件设置有检测在集成电路中发生操作问题的错误检测单元,时钟状态保持单元,其保持预定项中的相位信息为两维或多次, 相位时钟和输出单元,当错误检测单元检测到集成电路中发生操作的问题时,输出两相或更多相位时钟的预定项中的相位的信息。

    Direct-current motor control device and method for detecting state of direct-current motor
    9.
    发明授权
    Direct-current motor control device and method for detecting state of direct-current motor 失效
    直流马达控制装置及直流马达状态检测方法

    公开(公告)号:US08424839B2

    公开(公告)日:2013-04-23

    申请号:US13020207

    申请日:2011-02-03

    IPC分类号: F16K31/02

    摘要: A current detection unit detects an electric current caused by superimposing a direct current from a direct-current power source on an alternating current from an alternating-current power source and supplied through a brush to a direct-current motor. An extracting unit extracts an alternating-current component of the detected electric current. An angle detection unit detects a rotation angle of the motor according to the extracted alternating-current component. A direction detection unit detects a rotative direction of the motor according to a change pattern of the extracted alternating-current component. A core of the motor has slots each defined between adjacent two of teeth. The slots respectively accommodate phase coils respectively wound around the teeth. Turns of the phase coils are different from each other.

    摘要翻译: 电流检测单元通过将来自直流电源的直流电叠加到来自交流电源的交流电并通过电刷提供给直流电动机而引起的电流。 提取单元提取检测到的电流的交流分量。 角度检测单元根据所提取的交流分量检测电动机的旋转角度。 方向检测单元根据所提取的交流分量的变化模式来检测电动机的旋转方向。 电动机的铁芯在相邻的两个齿之间具有槽。 这些槽分别容纳分别缠绕在齿上的相位线圈。 相位线圈的转数彼此不同。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20130017675A1

    公开(公告)日:2013-01-17

    申请号:US13539925

    申请日:2012-07-02

    申请人: Hideki Hayashi

    发明人: Hideki Hayashi

    IPC分类号: H01L21/266

    摘要: A through portion is formed on a semiconductor substrate. Into the semiconductor substrate, a first ion implantation is performed via the through portion. The through portion is at least partially removed in the thickness direction from a region of at least a portion of the through portion when viewed in a plan view. A second ion implantation is performed into the semiconductor substrate at the region of at least the portion thereof. An implantation energy for the first ion implantation is equal to an implantation energy for the second ion implantation.

    摘要翻译: 在半导体基板上形成贯通部。 在半导体基板中,经由贯通部进行第一离子注入。 当从俯视图中观察时,贯穿部分至少部分地从贯穿部分的至少一部分的区域沿厚度方向去除。 在半导体衬底的至少其一部分的区域进行第二离子注入。 用于第一离子注入的注入能量等于用于第二离子注入的注入能量。