摘要:
In a foreign particle inspecting method and apparatus in which a polarized beam is applied to a surface to be inspected through a light transmitting member mounted thereon, in which scattered light from a foreign particle on the surface to be inspected is received by a light receiving device through the light transmitting member, and in which the foreign particle is discriminated based on a detection signal from the light receiving device, the detection signal is corrected in conformity with the transmittance of the light transmitting member for polarized incident scanning light and the transmittance of the light transmitting member for non-polarized light scattered from the foreign particle, for various angles of incidence of the polarized light and emergence of the non-polarized light. Foreign particle data may be indicated by a mapping method.
摘要:
A foreign particle inspection apparatus, for detecting a foreign particle on a reticle or the like includes an illumination system for irradiating an inspection area on a specimen with inspecting light, and plural light-receiving systems adapted to condense the scattered light from a foreign particle in the inspection area and having respective light-receiving areas on the specimen, each smaller than the inspection area. Each of the light-receiving areas of the plural light-receiving systems overlaps partially with at least one of the other light-receiving areas. The plural light-receiving systems are so arranged that any point in the inspection area is covered by the light-receiving areas of at least two of the plural light-receiving systems. A foreign particle in the inspection area is detected by a detection system, based on the lights condensed by the plural light receiving systems.
摘要:
A foreign particle detecting apparatus comprises a light source for radiating coherent light onto an object to be detected on a surface of which a circuit pattern is formed, a focusing device for focusing the light emitted from the light source onto the object to be detected at a predetermined angular aperture, a device for moving the incident light focused at the predetermined angular aperture relative to the object to be detected, and a detector for receiving scattered light produced upon incidence of the focused light onto the object to be detected, and which detects foreign matter on the object to be detected on the basis of an output signal from the detector. Foreign matter is discriminated from the circuit pattern on the basis of the output signal from the detector means. The detector comprises at least two light-receiving elements, separated by a spatial angle substantially equal to or slightly larger than the angular aperture of the incident light, for individually outputting signals.
摘要:
In a foreign particle inspection apparatus for detecting foreign particles present on a transparent object, a light beam is applied obliquely to one surface of the object, and the object and the light beam are moved relatively to scan an area of the surface. A photoelectric converter has a light receiving surface disposed to oppose the surface of the object and at least one end of the object. The converter receives scattered light from the foreign particles incident on the light receiving surface and outputs an electrical signal. A light intercepting member is disposed to intercept light propagated in the object from the scanning area toward the end of the object, that would otherwise be transmitted through the end of the object and travel externally of the object to the light receiving surface.
摘要:
In the case the first selection criteria is set, a plurality of detection points are selected to control the pitching and rolling of the wafer, whereas in the case the second selection criteria is set, priority is put to control the rolling on the wafer. The exposure apparatus has a selection unit to choose between these criteria, and on scanning exposure the controller adjusts the wafer position in the optical axis direction, pitching, rolling or the wafer position in the optical axis direction and rolling according to the selection criteria. Accordingly, by precisely adjusting the wafer surface position in the optical axis direction and rolling that greatly affects defocus, the critical dimension variation by a macroscopic observation, which is caused by defocus, can be prevented. Moreover, by performing an alternate scanning on the entire shot area including shot areas to be exposed on the circumferential portion, throughput can be maintained extremely high.
摘要:
An optical detection system capable of detecting even small particles or defects on a specimen such as a mask with high sensitivity and being unaffected by diffracted light from the edges of the pattern even when inspecting a thick specimen. The optical detection system includes a light emission means for illuminating a pattern surface on the specimen with light, a first light reception optical system placed on the pattern surface side of the specimen for receiving scattered light emanating from the pattern surface, a second light reception optical system placed on the glass side of the specimen in symmetry with the first light reception optical system relative to the pattern surface for receiving scattered light emanating from the pattern surface through the specimen and a corrective optical element for correcting for differences in the aberration states of the first and second light reception optical systems.
摘要:
Light is irradiated on a light-shielding pattern on an object surface side of a projection optical system, and light intensity distribution of the light having passed through the projection optical system and slits is detected while slits of an aerial image measuring unit on the image plane side of the projection optical system are moved within a plane perpendicular to the optical axis of the projection optical system, The information concerning the flare of the projection optical system is computed from the light intensity distribution, so that the influence of resist coated on a wafer used in a conventional exposing method can be eliminated, and highly accurate measurement of information concerning the flare can be realized. Further, measurement of information concerning the flare can be performed in a short time comparing to the exposing method because development process or the like of the wafer is not necessary.
摘要:
A photomask blank substrate is made by polishing a starting substrate to a specific flatness in a principal surface region on a top surface of the substrate so as to form a polished intermediate product, then additionally polishing the intermediate product. Substrates made in this way exhibit a good surface flatness at the time of wafer exposure. When a photomask fabricated from a blank obtained from such a substrate is held on the mask stage of a wafer exposure system with a vacuum chuck, the substrate surface undergoes minimal warping, enabling exposure patterns of small geometry to be written onto wafers to good position and linewidth accuracies.
摘要:
A sensor is used at a substrate level in a lithographic projection apparatus having a projection system with a numeric aperture that is greater than 1 and is configured to project a patterned radiation beam onto a target portion of a substrate The sensor includes a radiation-detector; a transmissive plate having a front surface and a back surface, the transmissive plate being positioned such that radiation projected by the projection system passes into the front surface of the transmissive plate and out of the back surface thereof to the radiation detector; and a luminescent layer provided on the back surface of the transmissive plate, the luminescent layer absorbing the radiation and emitting luminescent radiation of a different wavelength, wherein the back surface is rough.
摘要:
Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is νoτ μoρε τηαν 0.5 μm is selected.