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448 条记录 (耗时 0.049 秒)

    Electroluminescent device
    2.
    发明授权
    Electroluminescent device 失效
    电致发光器件

    公开(公告)号：US5200277A

    公开(公告)日：1993-04-06

    申请号：US454961

    申请日：1989-12-22

    申请人： Takahiro Nakayama ,  Kenichi Onisawa ,  Katsumi Tamura ,  Kazuo Taguchi ,  Akira Sato ,  Kenichi Hashimoto ,  Yoshio Abe ,  Masanobu Hanazono

    发明人： Takahiro Nakayama ,  Kenichi Onisawa ,  Katsumi Tamura ,  Kazuo Taguchi ,  Akira Sato ,  Kenichi Hashimoto ,  Yoshio Abe ,  Masanobu Hanazono

    IPC分类号： C23C14/08 ,  H05B33/10 ,  H05B33/22

    CPC分类号： H05B33/22 ,  C23C14/08 ,  H05B33/10 ,  Y10S428/917 ,  Y10T428/24975 ,  Y10T428/265

    摘要： An electroluminescent device including dielectric films each of which consists of first regions made of a material with a strong self-healing type dielectric breakdown characteristic, second regions made of a material with a strong propagating type dielectric breakdown characteristic, and mixed regions consisting of a mixture of these two materials, the first and second regions being arranged alternately in the film thickness direction with the mixed regions therebetween, the mixing ratio of these two materials in the mixed regions changing in such a manner that the ratio of one material gradually decreases from a region of this material toward the adjacent region of the other material, that is, the ratio of the other material increases. Thus, the changes in the mixing ratio of these two materials of the dielectric films in the film thickness direction are continuous and periodic. These dielectric films, with a high breakdown field strength, make it possible to obtain an electroluminescent device having a large drive voltage margin and providing a luminescence of high brightness.

    摘要翻译： 一种电致发光器件，包括电介质膜，每个电介质膜由具有强自愈型电介质击穿特性的材料制成的第一区域，由具有强传播型电介质击穿特性的材料制成的第二区域，以及由混合物组成的混合区域 在这两种材料中，第一和第二区域在膜厚度方向上交替地与它们之间的混合区域布置，这两种材料在混合区域中的混合比以这样的方式变化，使得一种材料的比例从 该材料的区域朝向另一材料的相邻区域，即另一种材料的比例增加。 因此，电介质膜在膜厚方向上的这两种材料的混合比的变化是连续的和周期性的。 具有高击穿场强度的这些电介质膜使得可以获得具有大的驱动电压余量并提供高亮度的发光的电致发光器件。

    Thin film EL element and process for producing the same
    3.
    发明授权
    Thin film EL element and process for producing the same 失效
    薄膜EL元件及其制造方法

    公开(公告)号：US4857802A

    公开(公告)日：1989-08-15

    申请号：US100758

    申请日：1987-09-24

    申请人： Moriaki Fuyama ,  Katsumi Tamura ,  Kazuo Taguchi ,  Kenichi Onisawa ,  Akira Sato ,  Kenichi Hashimoto ,  Takahiro Nakayama ,  Yoshio Abe

    发明人： Moriaki Fuyama ,  Katsumi Tamura ,  Kazuo Taguchi ,  Kenichi Onisawa ,  Akira Sato ,  Kenichi Hashimoto ,  Takahiro Nakayama ,  Yoshio Abe

    IPC分类号： C23C14/00 ,  C23C14/08 ,  H05B33/10 ,  H05B33/12 ,  H05B33/22

    CPC分类号： H05B33/10 ,  C23C14/0036 ,  C23C14/088 ,  H05B33/22

    摘要： A thin film EL element which comprises an insulating substrate, a transparent electrode, a first insulating layer, a light-emitting layer, a second insulating layer and a back side electrode, successively laid one upon another, at least one of the first and second insulating layers being composed of a material having a perovskite crystal structure, for example, a layer of SrTiO.sub.3, PbTiO.sub.3 or BaTiO.sub.3, particularly a SrTiO.sub.3. The material having the perovskite crystal structure has an increased (111) plane orientation such that the diffraction intensity ratio of (111) plane to (110) plane, I (111)/I (110), is more than 0.5. The material can be a single crystal, having (111) plane orientation. The material is deposited by sputtering, at substrate temperatures of not less than 200.degree. C. and up to the softening point of the insulating substrate, and at a pressure of not more than 1.times.10.sup.-2 Torr. The material has a high dielectric constant, a high dielectric strength and thus has a high reliability of element performance with a low driving voltage.

    摘要翻译： 1.一种薄膜EL元件，其特征在于，包括：绝缘基板，透明电极，第一绝缘层，发光层，第二绝缘层和背面电极， 绝缘层由具有钙钛矿晶体结构的材料构成，例如SrTiO 3，PbTiO 3或BaTiO 3层，特别是SrTiO 3层。 具有钙钛矿晶体结构的材料具有增加的（111）面取向，使得（111）面与（110）面的衍射强度比I（111）/ I（110）大于0.5。 该材料可以是具有（111）面取向的单晶。 该材料通过溅射沉积，在衬底温度不低于200℃，直到绝缘衬底的软化点，并且压力不大于1×10 -2 Torr。 该材料具有高介电常数，高介电强度，因此具有低驱动电压的元件性能的高可靠性。

    Powder magnetic core and the method of manufacturing the same
    9.
    发明授权
    Powder magnetic core and the method of manufacturing the same 有权
    粉末磁芯及其制造方法

    公开(公告)号：US08974608B2

    公开(公告)日：2015-03-10

    申请号：US12081490

    申请日：2008-04-16

    申请人： Takayuki Hirose ,  Masaharu Edo ,  Akira Sato

    发明人： Takayuki Hirose ,  Masaharu Edo ,  Akira Sato

    IPC分类号： B22F1/00 ,  H01F1/00 ,  H01F1/03 ,  C22C1/00 ,  H01F41/02 ,  B22F1/02 ,  B22F7/02 ,  C22C33/02 ,  H01F1/24

    CPC分类号： H01F41/0246 ,  B22F1/02 ,  B22F7/02 ,  B22F2998/10 ,  C22C33/0228 ,  C22C2202/02 ,  H01F1/24 ,  B22F3/02

    摘要： A powder magnetic core with improved high frequency magnetic characteristics and reduced eddy current loss is manufactured by a manufacturing method including the steps of (a) providing coated soft magnetic particles which are particles composed of soft magnetic material which each have been coated with an insulating coating, and insulator particles; (b) forming a magnetic layer by press molding the coated soft magnetic particles in a mold assembly; (c) forming an insulator layer on the magnetic layer by press molding the insulator particles in the mold assembly; and (d) repeating the steps (b) and (c) to fabricate a laminate of alternating magnetic layers and insulator layers and provide the powder magnetic core.

    摘要翻译： 通过制造方法制造具有改善的高频磁特性和降低的涡流损耗的粉末磁芯，其包括以下步骤：（a）提供涂覆的软磁性颗粒，其是由软磁性材料构成的颗粒，每个软磁性颗粒均涂覆有绝缘涂层 ，和绝缘体颗粒; （b）通过在模具组件中压制成型所涂覆的软磁性颗粒来形成磁性层; （c）通过在所述模具组件中压模所述绝缘体颗粒在所述磁性层上形成绝缘体层; 和（d）重复步骤（b）和（c）以制造交替磁层和绝缘体层的叠层，并提供粉末磁芯。

    Image pickup device and method for manufacturing the image pickup device
    10.
    发明授权
    Image pickup device and method for manufacturing the image pickup device 有权
    用于制造图像拾取装置的图像拾取装置和方法

    公开(公告)号：US08792044B2

    公开(公告)日：2014-07-29

    申请号：US13503826

    申请日：2010-10-26

    申请人： Toshiyuki Imai ,  Tougo Teramoto ,  Yasushi Iijima ,  Shigeru Hosoe ,  Akira Sato ,  Yuiti Fujii ,  Daisuke Watanabe

    发明人： Toshiyuki Imai ,  Tougo Teramoto ,  Yasushi Iijima ,  Shigeru Hosoe ,  Akira Sato ,  Yuiti Fujii ,  Daisuke Watanabe

    IPC分类号： H04N5/225

    CPC分类号： G02B13/001 ,  G02B13/0085 ,  H04N5/2254 ,  H04N5/2257

    摘要： Disclosed is an image pickup device, by which cut resistance at the time of cutting a wafer lens is reduced, high production efficiency is maintained, and excellent optical characteristics are obtained. The image pickup device has a first lens block, a second lens block, a spacer, and a sensor unit. The side surface section of the first lens block, the side surface section of the second lens block, and the side surface section of the spacer are formed on the same plane. A lens cover that covers the first and the second lens blocks is provided in a step formed by respective side surface sections of the first lens block, the second lens block and the spacer, and the side surface section of the sensor unit.

    摘要翻译： 公开了一种图像拾取装置，通过该方式，切割晶片透镜时的切割电阻降低，生产效率高，并且获得了优异的光学特性。 图像拾取装置具有第一透镜块，第二透镜块，间隔件和传感器单元。 第一透镜块的侧表面部分，第二透镜块的侧表面部分和间隔件的侧表面部分形成在同一平面上。 覆盖第一透镜块和第二透镜块的透镜盖设置在由第一透镜块，第二透镜块和间隔件的相应侧表面部分以及传感器单元的侧表面部分形成的台阶中。