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1.发明授权Fine pattern forming process using a resist composition sensitive to deep ultraviolet light 失效使用对深紫外光敏感的抗蚀剂组合物的精细图案形成方法
公开(公告)号：US5780206A
公开(公告)日：1998-07-14
申请号：US898086
申请日：1997-07-23
CPC分类号： G03F7/091 , G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/127 , Y10S430/128
摘要： A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.
摘要翻译： 一种用于深紫外光的抗蚀剂组合物，其包含（a）以下树脂组分（i） - （iii）之一：（i）通过酸的作用除去保护基而变成碱溶性的树脂，（ii） 碱溶性树脂和溶解抑制性化合物的组合，（iii）碱溶性树脂和交联性化合物的组合，（b）酸产生剂，（c）特殊的蒽衍生物，（d） 溶剂适用于使用深紫外光，KrF准分子激光等在由于吸收不期望的反射的深紫外光而具有水平差的高反射性基板上形成图案。
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公开(公告)号：US5695910A
公开(公告)日：1997-12-09
申请号：US702805
申请日：1996-08-26
CPC分类号： G03F7/091 , G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/127 , Y10S430/128
摘要： A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.
摘要翻译： 一种用于深紫外光的抗蚀剂组合物，其包含（a）以下树脂组分（i） - （iii）之一：（i）通过酸的作用除去保护基而变成碱溶性的树脂，（ii） 碱溶性树脂和溶解抑制性化合物的组合，（iii）碱溶性树脂和交联性化合物的组合，（b）酸产生剂，（c）特殊的蒽衍生物，（d） 溶剂适用于使用深紫外光，KrF准分子激光等在由于吸收不期望的反射的深紫外光而具有水平差的高反射性基板上形成图案。
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公开(公告)号：US5558971A
公开(公告)日：1996-09-24
申请号：US407611
申请日：1995-03-21
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
摘要翻译： 抗蚀剂材料包括（a）三元共聚物，（b）光致酸发生剂和（c）溶剂具有高的光敏性，耐热性，粘合性，分辨率等，并且适于形成矩形图案。
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公开(公告)号：US5558976A
公开(公告)日：1996-09-24
申请号：US564591
申请日：1995-11-29
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
摘要翻译： 抗蚀剂材料包括（a）三元共聚物，（b）光致酸发生剂和（c）溶剂具有高的光敏性，耐热性，粘合性，分辨率等，并且适于形成矩形图案。
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公开(公告)号：US5518579A
公开(公告)日：1996-05-21
申请号：US373776
申请日：1995-01-17
CPC分类号： G03F7/16 , G03F7/085 , G03F7/11 , Y10S438/949
摘要： An acid solution is fed onto a TiN film formed on a semiconductor substrate. So, the TiN film is dipped into the acid solution, whereupon the surface of the semiconductor substrate is neutralized or is made less basic. Then, a chemically amplified resist, containing an acid generator which produces an acid when irradiated with radiant rays and a compound reactive to acids, is applied to the semiconductor substrate, to form a resist film. This is followed by a step for sending radiant rays upon the resist film to expose it. Then, the exposed resist pattern is developed to form a resist pattern without footing or scumming and under-cutting.
摘要翻译： 将酸溶液进料到形成在半导体衬底上的TiN膜上。 因此，将TiN膜浸入酸溶液中，于是半导体衬底的表面被中和或制成较少的碱性。 然后，在半导体衬底上施加含有产生酸的发生剂的化学放大型抗蚀剂，该酸性发生剂在用辐射线照射时产生酸，反应生成酸的化合物，形成抗蚀剂膜。 之后是将辐射线发射到抗蚀剂膜上以使其暴露的步骤。 然后，曝光的抗蚀剂图案被显影以形成没有基底或浮渣和下切的抗蚀剂图案。
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公开(公告)号：US06528240B1
公开(公告)日：2003-03-04
申请号：US09523200
申请日：2000-03-10
申请人： Shinji Kishimura , Akiko Katsuyama , Masaru Sasago
发明人： Shinji Kishimura , Akiko Katsuyama , Masaru Sasago
IPC分类号： G03F738
CPC分类号： G03F7/039 , G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106
摘要： A resist film is formed by applying, on a semiconductor substrate, a resist material including a base polymer having a sulfonyl group on a side chain. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band through a mask for pattern exposure, and is developed with a developer after the pattern exposure, thereby forming a resist pattern.
摘要翻译： 通过在半导体衬底上施加包括在侧链上具有磺酰基的基础聚合物的抗蚀剂材料来形成抗蚀剂膜。 用波长为1nm至180nm波段的光照射抗蚀剂膜，通过掩模进行图案曝光，并在图案曝光后用显影剂显影，从而形成抗蚀剂图案。
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公开(公告)号：US06335143B1
公开(公告)日：2002-01-01
申请号：US09100973
申请日：1998-06-22
IPC分类号： G03F7004
CPC分类号： G03F7/038 , G03F7/0045
摘要： A resist composition comprising an alkali-soluble polymer, a special cross-linking agent containing one or more oxirane rings and at least one of —O—, —CO—,—COO— and —OCO— groups in the molecule, a photoacid generator, and a solvent can form a film having high transmittance for deep UV light such as ArF excimer laser beams and high etching resistance as well as high resolution, and thus suitable for forming a negative working pattern.
摘要翻译： 一种抗蚀剂组合物，其包含碱溶性聚合物，分子中含有一个或多个环氧乙烷环和至少一个-O - ， - CO - ， - COO-和-OCO-基团的特殊交联剂，光酸产生剂 并且溶剂可以形成对于诸如ArF准分子激光束的深紫外光具有高透射率的膜并且具有高耐蚀刻性以及高分辨率，因此适合于形成负作用图案。
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公开(公告)号：US06258972B1
公开(公告)日：2001-07-10
申请号：US08691124
申请日：1996-08-01
申请人： Satoko Nakaoka , Masayuki Endo , Hiromi Ohsaki , Akiko Katsuyama
发明人： Satoko Nakaoka , Masayuki Endo , Hiromi Ohsaki , Akiko Katsuyama
IPC分类号： C07E708
CPC分类号： G03F7/0751
摘要： To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH3)3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH3)2CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.
摘要翻译： 向由硅制成的半导体衬底的表面提供异丙烯氧基三甲基硅烷作为表面处理剂，使半导体衬底的表面疏水化并增加对半导体衬底的粘合性。 因此，将Si（CH 3）3（三甲基甲硅烷基）取代为半导体衬底的表面上的OH基的氢原子，得到（CH 3）2 CO（丙酮）。 随后，通过使用所需的掩模将化学放大型抗蚀剂施加到半导体衬底的表面并暴露于光，然后依次由PEB和显影形成图案。 由于表面处理剂不产生氨，因此可以形成具有优异构型的图案，其上不形成不溶性表皮层。
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9.发明授权Resist composition and a method for formation of a pattern using the composition 失效抗蚀剂组合物和使用该组合物形成图案的方法
公开(公告)号：US6143472A
公开(公告)日：2000-11-07
申请号：US195236
申请日：1998-11-18
申请人： Motoshige Sumino , Akiko Katsuyama
发明人： Motoshige Sumino , Akiko Katsuyama
CPC分类号： G03F7/039 , G03F7/0045
摘要： This invention relates to a resist composition comprising a polymer containing, as a constituent unit, a monomer unit shown by the general formula [1a] ##STR1## (wherein X is a polycyclic hydrocarbon residue which may have a substituent, Z is a spacer or a direct bond, and R is a substituted alkyl or alkenyl group having one or two protected hydroxyl groups as substituent), a photosensitive compound which can generate an acid upon exposure to light and a solvent which can dissolve the polymer and the photosensitive compound, and a method for formation of a pattern using the said resist composition.The said resist composition shows high sensitivity and high resolution ability in which a polymer having high transmittance against deep-ultraviolet lights having a wavelength of 220 nm or less, particularly ArF excimer laser beams. The said resist composition can remarkably advantageously be used as a resist material for ArF excimer laser beams which has been considered to be a valuable technology for exposure belonging to the coming generation.
摘要翻译： 本发明涉及一种抗蚀剂组合物，其包含含有由通式[1a]所示的单体单元作为构成单元的聚合物（其中X为可以具有取代基的多环烃残基，Z为间隔基或直接键 R为具有1个或2个被保护的羟基作为取代基的取代的烷基或链烯基），能够在光照下产生酸的光敏化合物和溶解聚合物和感光性化合物的溶剂，以及 使用所述抗蚀剂组合物形成图案。 所述抗蚀剂组合物显示出高灵敏度和高分辨能力，其中对波长为220nm以下的深紫外光具有高透射率的聚合物，特别是ArF准分子激光束。 所述抗蚀剂组合物可以显着有利地用作用于ArF准分子激光束的抗蚀剂材料，其被认为是属于下一代的有意义的曝光技术。
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公开(公告)号：US06521393B1
公开(公告)日：2003-02-18
申请号：US09515334
申请日：2000-02-29
申请人： Shinji Kishimura , Akiko Katsuyama , Masaru Sasago
发明人： Shinji Kishimura , Akiko Katsuyama , Masaru Sasago
IPC分类号： G03F730
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/111 , Y10S430/146
摘要： A resist film is formed by applying, on a semiconductor substrate, a chemically amplified resist including an acid generator of an onium salt having a halogen atom both in the cation and the anion thereof. The resist film is irradiated with a F2 laser beam with a wavelength of a 157 nm band or an Ar2 laser beam with a wavelength of a 126 nm band for pattern exposure, and the resist film is developed after the pattern exposure, thereby forming a resist pattern.
摘要翻译： 通过在半导体衬底上施加化学放大抗蚀剂，形成抗蚀剂膜，该抗蚀剂包括在其阳离子和阴离子中具有卤原子的鎓盐的酸产生剂。 用波长为157nm波长的F2激光束或波长为126nm波长的Ar2激光束照射抗蚀剂膜用于图案曝光，并且在图案曝光之后使抗蚀剂膜显影，从而形成抗蚀剂 模式。
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