-
公开(公告)号：US5558971A
公开(公告)日：1996-09-24
申请号：US407611
申请日：1995-03-21
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
摘要翻译： 抗蚀剂材料包括（a）三元共聚物，（b）光致酸发生剂和（c）溶剂具有高的光敏性，耐热性，粘合性，分辨率等，并且适于形成矩形图案。
-
公开(公告)号：US5558976A
公开(公告)日：1996-09-24
申请号：US564591
申请日：1995-11-29
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
摘要翻译： 抗蚀剂材料包括（a）三元共聚物，（b）光致酸发生剂和（c）溶剂具有高的光敏性，耐热性，粘合性，分辨率等，并且适于形成矩形图案。
-
3.发明授权Fine pattern forming process using a resist composition sensitive to deep ultraviolet light 失效使用对深紫外光敏感的抗蚀剂组合物的精细图案形成方法
公开(公告)号：US5780206A
公开(公告)日：1998-07-14
申请号：US898086
申请日：1997-07-23
CPC分类号： G03F7/091 , G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/127 , Y10S430/128
摘要： A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.
摘要翻译： 一种用于深紫外光的抗蚀剂组合物，其包含（a）以下树脂组分（i） - （iii）之一：（i）通过酸的作用除去保护基而变成碱溶性的树脂，（ii） 碱溶性树脂和溶解抑制性化合物的组合，（iii）碱溶性树脂和交联性化合物的组合，（b）酸产生剂，（c）特殊的蒽衍生物，（d） 溶剂适用于使用深紫外光，KrF准分子激光等在由于吸收不期望的反射的深紫外光而具有水平差的高反射性基板上形成图案。
-
公开(公告)号：US5695910A
公开(公告)日：1997-12-09
申请号：US702805
申请日：1996-08-26
CPC分类号： G03F7/091 , G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/127 , Y10S430/128
摘要： A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.
摘要翻译： 一种用于深紫外光的抗蚀剂组合物，其包含（a）以下树脂组分（i） - （iii）之一：（i）通过酸的作用除去保护基而变成碱溶性的树脂，（ii） 碱溶性树脂和溶解抑制性化合物的组合，（iii）碱溶性树脂和交联性化合物的组合，（b）酸产生剂，（c）特殊的蒽衍生物，（d） 溶剂适用于使用深紫外光，KrF准分子激光等在由于吸收不期望的反射的深紫外光而具有水平差的高反射性基板上形成图案。
-
公开(公告)号：US06335143B1
公开(公告)日：2002-01-01
申请号：US09100973
申请日：1998-06-22
IPC分类号： G03F7004
CPC分类号： G03F7/038 , G03F7/0045
摘要： A resist composition comprising an alkali-soluble polymer, a special cross-linking agent containing one or more oxirane rings and at least one of —O—, —CO—,—COO— and —OCO— groups in the molecule, a photoacid generator, and a solvent can form a film having high transmittance for deep UV light such as ArF excimer laser beams and high etching resistance as well as high resolution, and thus suitable for forming a negative working pattern.
摘要翻译： 一种抗蚀剂组合物，其包含碱溶性聚合物，分子中含有一个或多个环氧乙烷环和至少一个-O - ， - CO - ， - COO-和-OCO-基团的特殊交联剂，光酸产生剂 并且溶剂可以形成对于诸如ArF准分子激光束的深紫外光具有高透射率的膜并且具有高耐蚀刻性以及高分辨率，因此适合于形成负作用图案。
-
公开(公告)号：US06258972B1
公开(公告)日：2001-07-10
申请号：US08691124
申请日：1996-08-01
申请人： Satoko Nakaoka , Masayuki Endo , Hiromi Ohsaki , Akiko Katsuyama
发明人： Satoko Nakaoka , Masayuki Endo , Hiromi Ohsaki , Akiko Katsuyama
IPC分类号： C07E708
CPC分类号： G03F7/0751
摘要： To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH3)3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH3)2CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.
摘要翻译： 向由硅制成的半导体衬底的表面提供异丙烯氧基三甲基硅烷作为表面处理剂，使半导体衬底的表面疏水化并增加对半导体衬底的粘合性。 因此，将Si（CH 3）3（三甲基甲硅烷基）取代为半导体衬底的表面上的OH基的氢原子，得到（CH 3）2 CO（丙酮）。 随后，通过使用所需的掩模将化学放大型抗蚀剂施加到半导体衬底的表面并暴露于光，然后依次由PEB和显影形成图案。 由于表面处理剂不产生氨，因此可以形成具有优异构型的图案，其上不形成不溶性表皮层。
-
公开(公告)号：US5866302A
公开(公告)日：1999-02-02
申请号：US892070
申请日：1997-07-14
申请人： Koji Matsuoka , Akiko Katsuyama , Takahiro Matsuo , Masayuki Endo
发明人： Koji Matsuoka , Akiko Katsuyama , Takahiro Matsuo , Masayuki Endo
IPC分类号： G03F7/004 , G03F7/09 , G03F7/11 , G03F7/16 , H01L21/027 , H01L21/311 , H01L21/316 , G03F7/00
CPC分类号： H01L21/31144 , G03F7/094 , G03F7/16
摘要： A BPSG film is formed on a semiconductor substrate and caused to reflow under an atmosphere of flowing Ar gas. Then, a chemically amplified resist is applied to the surface of the BPSG film to form a resist film, which is exposed to the irradiation of a KrF excimer laser through a mask. Since no lone pair of electrons exists on the surface of the BPSG film, an acid in the resist film is not deactivated and hence a reaction is evenly induced by an acid catalyst. After the development of the resist film, a resist pattern having an excellent profile with no footing is obtained.
摘要翻译： 在半导体衬底上形成BPSG膜，并在Ar气流下气氛中回流。 然后，将化学放大抗蚀剂施加到BPSG膜的表面以形成抗蚀剂膜，其通过掩模暴露于KrF准分子激光器的照射。 由于在BPSG膜的表面上不存在单一电子对，所以抗蚀剂膜中的酸不会失活，因此通过酸催化剂均匀地诱导反应。 在抗蚀剂膜显影之后，获得具有优异的无基底的抗蚀剂图案。
-
公开(公告)号：US5846692A
公开(公告)日：1998-12-08
申请号：US759990
申请日：1996-12-03
申请人： Akiko Katsuyama , Masayuki Endo
发明人： Akiko Katsuyama , Masayuki Endo
IPC分类号： G03F7/00 , G03F7/11 , G03F7/16 , H01L21/312 , G03C5/00
CPC分类号： H01L21/312 , G03F7/11 , G03F7/16
摘要： After forming a TiN film on a semiconductor substrate, a surface treatment agent in a gas phase, which is obtained by bubbling trimethylsilyl methylsulfonate with a nitrogen gas, is supplied onto the TiN film. The TiN film is then coated with a chemically amplified positive resist including an acid generator and a compound which can attain alkali solubility through the function of an acid, and a pre-bake process is subsequently conducted, thereby forming a resist film. The resist film is then exposed with a KrF excimer laser by using a desired mask. Through this exposure, an acid is generated from the acid generator included in the resist film. Since sulfonic acid produced from trimethylsilyl methylsulfonate weakens the function as a base of a nitrogen atom having a lone pair, the acid generated from the acid generator is not deactivated at the bottom of the resist film. As a result, a resist pattern with a satisfactory shape free from footing can be formed.
摘要翻译： 在半导体衬底上形成TiN膜之后，将通过用氮气鼓泡三甲基甲硅烷基甲磺酸酯获得的气相中的表面处理剂供给到TiN膜上。 然后用化学放大的正性抗蚀剂涂覆TiN膜，该正性抗蚀剂包括酸产生剂和通过酸的功能可以获得碱溶解性的化合物，随后进行预烘烤工艺，从而形成抗蚀剂膜。 然后通过使用期望的掩模用KrF准分子激光器曝光抗蚀剂膜。 通过该曝光，从包含在抗蚀剂膜中的酸发生剂产生酸。 由于由三甲基甲硅烷基甲基磺酸盐生成的磺酸减弱了具有单一对的氮原子的碱基的功能，所以在酸性发生剂产生的酸在抗蚀剂膜的底部不失活。 结果，可以形成具有令人满意的形状，没有脚底的抗蚀剂图案。
-
公开(公告)号：US5856069A
公开(公告)日：1999-01-05
申请号：US886446
申请日：1997-07-01
申请人： Masayuki Endo , Akiko Katsuyama
发明人： Masayuki Endo , Akiko Katsuyama
CPC分类号： G03F7/70866 , G03F7/0045 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26
摘要： The composition of a resist material is determined so that the film thinning quantity of the resist pattern is increased when the profile of a resist pattern which is formed in advance tends to be a T-top profile as compared with a reference pattern profile but so that the film thinning quantity of the resist pattern is decreased when the profile of the resist pattern which is formed in advance tends to be a round-shoulder profile as compared with the reference pattern profile. After coating a semiconductor substrate at its top with the resist material whose composition is determined as such to thereby form a resist film, the resist film is exposed through a mask. The exposed resist film is developed, whereby a resist pattern is obtained.
摘要翻译： 确定抗蚀剂材料的组成，使得当与参考图案轮廓相比，当预先形成的抗蚀剂图案的轮廓倾向于是T顶部轮廓时，抗蚀剂图案的膜变薄量增加， 与参考图案轮廓相比，当预先形成的抗蚀剂图案的轮廓倾向于是圆肩轮廓时，抗蚀剂图案的膜变薄量减小。 在其顶部涂覆半导体衬底的组合物被确定为由此形成抗蚀剂膜的抗蚀剂材料之后，通过掩模曝光抗蚀剂膜。 曝光的抗蚀剂膜被显影，由此获得抗蚀剂图案。
-
公开(公告)号：US5756262A
公开(公告)日：1998-05-26
申请号：US612798
申请日：1996-03-11
申请人： Masayuki Endo , Akiko Katsuyama
发明人： Masayuki Endo , Akiko Katsuyama
CPC分类号： G03F7/70866 , G03F7/0045 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26
摘要： The composition of a resist material is determined so that the film thinning quantity of the resist pattern is increased when the profile of a resist pattern which is formed in advance tends to be a T-top profile as compared with a reference pattern profile but so that the film thinning quantity of the resist pattern is decreased when the profile of the resist pattern which is formed in advance tends to be a round-shoulder profile as compared with the reference pattern profile. After coating a semiconductor substrate at its top with the resist material whose composition is determined as such to thereby form a resist film, the resist film is exposed through a mask. The exposed resist film is developed, whereby a resist pattern is obtained.
-
-
-
-
-
-
-
-
-
搜索结果
21 条记录 (耗时 0.03 秒)
