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1.发明公开公开(公告)号：US20240241448A1
公开(公告)日：2024-07-18
申请号：US18531191
申请日：2023-12-06
Applicant: Gigaphoton Inc.
Inventor： Atsushi UEDA
CPC classification number: G03F7/70033 , G03F7/7015 , G03F7/7095 , H01J37/32357 , H01J37/32449
Abstract: An extreme ultraviolet light generation chamber device includes a chamber including a plasma generation region in which plasma is generated from a droplet target of tin irradiated with laser light; a gas supply port supplying an etching gas containing hydrogen to the internal space; a cylindrical partition wall surrounding the plasma generation region, and having an opening on the internal space side as an inlet port of a gas and an opening at the outside of the chamber as an exhaust port of the gas; an exhaust device; and a concentrating mirror. The partition wall has an inner circumferential surface on which tin is more likely to be deposited on a downstream side of a predetermined position on a downstream side of the plasma generation region in a flow direction of the gas inside the partition wall than on an upstream side of the predetermined position.
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公开(公告)号：US20210298160A1
公开(公告)日：2021-09-23
申请号：US17156186
申请日：2021-01-22
Applicant: Gigaphoton Inc.
Inventor： Takayuki OSANAI , Atsushi UEDA , Koichiro KOGE , Akihiro OHSAWA , Toshiya SHINTANI , Yoshiaki YOSHIDA , Yuki ISHIDA , Yosuke TAKADA
Abstract: An extreme ultraviolet light generation apparatus may include a chamber device, a concentrating mirror, a central gas supply port configured to supply gas along a focal line passing through a first focal point and a second focal point from the center side of the reflection surface, and a first peripheral gas supply port disposed at a peripheral portion of the reflection surface and configured to supply gas in a direction from the outer side of the reflection surface toward the inner side of the reflection surface. The first peripheral gas supply port may supply gas, when viewed along the focal line, in an inclined direction inclined to a tangential direction side of the peripheral portion at the peripheral portion where the first peripheral gas supply port is located with respect to a first straight line passing through the first peripheral gas supply port and the focal line.
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公开(公告)号：US20250102919A1
公开(公告)日：2025-03-27
申请号：US18807607
申请日：2024-08-16
Applicant: Gigaphoton Inc.
Inventor： Atsushi UEDA
Abstract: A differential evacuation device includes a connection pipe connecting a first chamber which outputs extreme ultraviolet light and a second chamber to which the extreme ultraviolet light is input, a first partition wall including a first opening and a first partition plate being arranged such that the extreme ultraviolet light passes through the first opening, a second partition wall including a second opening and a second partition plate being arranged such that the extreme ultraviolet light passes through the second opening, and a first exhaust port exhausting a gas in a first differential evacuation chamber between the first partition wall and the second partition wall. Here, the first partition wall is arranged such that the second opening is surrounded by a portion outside a first high pressure region where a pressure is highest in pressure distribution at the second partition plate on the first differential evacuation chamber side.
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4.发明申请公开(公告)号：US20240422889A1
公开(公告)日：2024-12-19
申请号：US18654475
申请日：2024-05-03
Applicant: Gigaphoton Inc. , Hiroshima University
Inventor： Takayuki SUZUKI , Atsushi UEDA , Georg SOUMAGNE , Shinichi NAMBA
Abstract: An extreme ultraviolet light generation chamber device includes a chamber including a plasma generation region in which a droplet target irradiated with laser light is turned into plasma and extreme ultraviolet light is generated, a light concentrating mirror arranged in the chamber and concentrating the extreme ultraviolet light, a gas curtain forming device injecting a gas to form a gas curtain intersecting an optical path of the extreme ultraviolet light propagating from the plasma generation region to the light concentrating mirror, an etching gas supply unit supplying an etching gas into the chamber, and a gas exhaust unit exhausting a residual gas in the chamber. Pressure in a second space that is a space on a side toward the light concentrating mirror from the gas curtain is lower than pressure in a first space that is a space on a side toward the plasma generation region from the gas curtain.
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5.发明公开公开(公告)号：US20230266677A1
公开(公告)日：2023-08-24
申请号：US18149998
申请日：2023-01-04
Applicant: Gigaphoton Inc.
Inventor： Fumio IWAMOTO , Atsushi UEDA , Takayuki YABU
CPC classification number: G03F7/70741 , G03F7/70841 , G03F1/24
Abstract: A target supply system includes a load lock chamber configured to contain a solid target substance, a solid target supply pipe connected to the load lock chamber, a pressure regulator configured to regulate an externally supplied gas pressure, a gas pressure supply pipe connected to the pressure regulator, a melting tank connected to both the solid target supply pipe and the gas pressure supply pipe, and configured to melt the solid target substance supplied from the load lock chamber via the solid target supply pipe to generate a liquid target substance, a nozzle configured to discharge the liquid target substance by a gas pressure supplied from the pressure regulator to the melting tank via the gas pressure supply pipe, and a buffer tank configured to communicate with the melting tank and supply a gas pressure thereto when the solid target substance is supplied to the melting tank.
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Patent Agency Ranking
公开(公告)号：US20220146943A1
公开(公告)日：2022-05-12
申请号：US17492280
申请日：2021-10-01
Applicant: Gigaphoton Inc.
Inventor： Koichiro KOGE , Atsushi UEDA , Takayuki OSANAI
Abstract: An extreme ultraviolet light generation system may include a chamber, a first partition wall having at least one opening which provides communication between a first space and a second space, an EUV light concentrating mirror located in the second space and configured to concentrate extreme ultraviolet light generated in a plasma generation region located in the first space, a first gas supply port formed at the chamber, and a gas exhaust port formed in the first partition wall, a distance between the center of the plasma generation region and an edge of the at least one opening being equal to or more than a stop distance LSTOP [mm] calculated by the following equation. LSTOP=272.8·EVG0.4522·P−1 EAVG [eV] representing average kinetic energy of ions generated in the plasma generation region and P [Pa] representing a gas pressure inside the first partition wall
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公开(公告)号：US20210289611A1
公开(公告)日：2021-09-16
申请号：US17156376
申请日：2021-01-22
Applicant: Gigaphoton Inc.
Inventor： Atsushi UEDA , Takayuki OSANAI , Koichiro KOGE
Abstract: A chamber device may include a concentrating mirror, a central gas supply port, an inner wall, an exhaust port, a recessed portion, and a lateral gas supply port. The recessed portion may be on a side lateral to the focal line and recessed outward from the inner wall when viewed from a direction perpendicular to the focal line. The lateral gas supply port is formed at the recessed portion and may supply gas toward gas supplied from the central gas supply port so that a flow direction of the gas supplied from the central gas supply port is bent from a direction along the focal line toward the exhaust port and an internal space of the recessed portion.
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8.发明公开公开(公告)号：US20230269857A1
公开(公告)日：2023-08-24
申请号：US18148808
申请日：2022-12-30
Applicant: Gigaphoton Inc.
Inventor： Atsushi UEDA , Koichiro Koge
CPC classification number: H05G2/003 , H05G2/008 , G21K1/06 , G03F7/70033
Abstract: An extreme ultraviolet light generation apparatus includes a chamber; a housing extending from an internal space of the chamber to outside of the chamber, surrounding a plasma generation region except on a trajectory of a droplet target and on an optical path of laser light, and including a first opening through which extreme ultraviolet light generated from the plasma passes; a light concentrating mirror arranged in a first space outside the housing at the internal space and reflecting the extreme ultraviolet light having passed through the first opening in a direction different from an incident direction of the extreme ultraviolet light; and a gas supply port provided in the chamber; and a gas exhaust port provided at the housing outside the chamber. An optical axis of the laser light when being radiated to the droplet target is along a direction in which the gas flows in the plasma generation region.
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9.发明申请公开(公告)号：US20220082927A1
公开(公告)日：2022-03-17
申请号：US17397554
申请日：2021-08-09
Applicant: Gigaphoton Inc.
Inventor： Yusuke HOSHINO , Yukio WATANABE , Toshihiro NISHISAKA , Atsushi UEDA , Koichiro KOGE , Takayuki OSANAI , Gouta NIIMI
Abstract: An extreme ultraviolet light generation apparatus may include a chamber, a first partition wall covering a plasma generation region in the chamber and having a first opening, an EUV light concentrating mirror located in a first space inside the chamber and outside the first partition wall and configured to concentrate extreme ultraviolet light generated in the plasma generation region and having passed through the first opening, a first gas supply port formed at the chamber and configured to supply gas to the first space, and a gas exhaust port formed in the first partition wall and configured to exhaust gas in a second space inside the first partition wall to outside of both the first partition wall and the chamber.
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10.发明申请公开(公告)号：US20210235571A1
公开(公告)日：2021-07-29
申请号：US17226515
申请日：2021-04-09
Applicant: Gigaphoton Inc.
Inventor： Atsushi UEDA , Shinji NAGAI
Abstract: An extreme ultraviolet light generation apparatus may include a chamber causing a target substance to be turned into plasma with laser light, a light concentrating mirror concentrating extreme ultraviolet light generated by the turning of the target substance into plasma, a gas supply unit supplying gas into the chamber, a magnetic field generation unit generating a magnetic field including a magnetic field axis that crosses a light path of the extreme ultraviolet light, a first exhaust port arranged at a position through which the magnetic field axis passes in the chamber, a second exhaust port arranged at a position opposite to the light concentrating mirror in the chamber, and a gas exhaust amount adjustment unit adjusting a ratio between an exhaust amount of first exhaust gas exhausted from the first exhaust port and an exhaust amount of second exhaust gas exhausted from the second exhaust port.
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