公开(公告)号：US10090255B2

公开(公告)日：2018-10-02

申请号：US15010868

申请日：2016-01-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brittany L. Hedrick ,  Vijay Sukumaran ,  Christopher L. Tessler ,  Richard F. Indyk ,  Sarah H. Knickerbocker

IPC: H05K1/11 ,  H05K1/18 ,  H05K3/00 ,  H01L23/00 ,  H01L21/78 ,  H01L23/498 ,  H01L21/48 ,  H05K1/03 ,  H01L23/15

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to dicing channels used in the singulatation process of interposers and methods of manufacture. The structure includes: one or more redistribution layers; a glass interposer connected to the one or more redistribution layers; a channel formed through the one or more redistribution layers and the glass interposer core, forming a dicing channel; and polymer material conformally filling the channel.

公开(公告)号：US20170221837A1

公开(公告)日：2017-08-03

申请号：US15010868

申请日：2016-01-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brittany L. Hedrick ,  Vijay Sukumaran ,  Christopher L. Tessler ,  Richard F. Indyk ,  Sarah H. Knickerbocker

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/498 ,  H05K3/00 ,  H01L21/56 ,  H05K1/03 ,  H05K1/11 ,  H05K1/02 ,  H01L21/78 ,  H01L21/48

CPC classification number: H01L23/562 ,  H01L21/486 ,  H01L21/78 ,  H01L23/15 ,  H01L23/49811 ,  H01L23/49827 ,  H01L2224/11 ,  H01L2224/73204 ,  H05K1/0306 ,  H05K3/0026 ,  H05K3/0052 ,  H05K3/0094 ,  H05K2201/0959 ,  H05K2201/10378

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to dicing channels used in the singulatation process of interposers and methods of manufacture. The structure includes: one or more redistribution layers; a glass interposer connected to the one or more redistribution layers; a channel formed through the one or more redistribution layers and the glass interposer core, forming a dicing channel; and polymer material conformally filling the channel.

公开(公告)号：US10446442B2

公开(公告)日：2019-10-15

申请号：US15386097

申请日：2016-12-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shahid A. Butt ,  Christopher L. Tessler

IPC: H01L21/683 ,  H01L21/768 ,  H01L23/48 ,  H01L23/66 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L49/02 ,  H01L29/40 ,  H01L23/367

Abstract: Disclosed are integrated circuit (IC) chip structures (e.g., radio frequency (RF) IC chip structures) and methods of forming the structures with an electrically insulative molding compound handler substrate. Each structure includes at least: an electrically insulative molding compound handler substrate; an insulator layer on the handler substrate; and one or more semiconductor devices (e.g., RF semiconductor devices) on the insulator layer. Each method includes at least: attaching a temporary carrier above back end of the line (BEOL) metal levels, which are over an interlayer dielectric layer covering one or more semiconductor devices; removing at least a portion of a semiconductor handler substrate, which is below the semiconductor device(s) and separated therefrom by an insulator layer; replacing the semiconductor handler substrate with a replacement handler substrate made of an electrically insulative molding compound; and removing the temporary carrier. The molding compound handler substrate provides backside isolation that prevents unwanted noise coupling.