公开(公告)号：US09805977B1

公开(公告)日：2017-10-31

申请号：US15176598

申请日：2016-06-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vijay Sukumaran ,  Thuy L. Tran-Quinn ,  Jorge A. Lubguban ,  John J. Garant

IPC: H01L29/40 ,  H01L21/768 ,  H01L23/48 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/321

CPC classification number: H01L21/76898 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/32115 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76873 ,  H01L23/481

Abstract: One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include a front side and back side opposing the front side, the integrated circuit structure comprising: a through-silicon-via (TSV) at least partially within a dielectric layer extending away from the front side; a first metal adjacent to the TSV and within the dielectric layer, the first metal being substantially surrounded by a first seed layer; a conductive pad over the first metal and the TSV and extending away from the front side, wherein the conductive pad provides electrical connection between the TSV and the first metal and includes a second seed layer substantially surrounding a second metal, wherein the second seed layer separates the second metal from the first metal and the TSV.

公开(公告)号：US10325808B2

公开(公告)日：2019-06-18

申请号：US15858691

申请日：2017-12-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ivan Huang ,  Elavarasan Pannerselvam ,  Vijay Sukumaran

IPC: H01L21/78 ,  H01L21/02 ,  H01L21/027 ,  H01L21/263 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/56 ,  H01L23/00

Abstract: A method of forming a 3D crack-stop structure in, through, and wrapped around the edges of a substrate to prevent through-substrate cracks from propagating and breaking the substrate and the resulting device are provided. Embodiments include providing a substrate including one or more dies; forming a continuous first trench near an outer edge of the substrate; forming a continuous second trench parallel to and on an opposite side of the first trench from the outer edge; forming a continuous row of vias parallel to and on an opposite side of the second trench from the first trench, forming a continuous third trench parallel to and near an outer edge of each of the dies; forming a protective layer wrapping around the outer edge of the substrate and over and filling the trenches and vias; and patterning active areas of the substrate between the vias and the third trench.

公开(公告)号：US09892971B1

公开(公告)日：2018-02-13

申请号：US15392042

申请日：2016-12-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ivan Huang ,  Elavarasan Pannerselvam ,  Vijay Sukumaran

IPC: H01L21/302 ,  H01L21/78 ,  H01L23/00 ,  H01L21/56 ,  H01L21/263 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/78 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/2633 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/561 ,  H01L23/562

Abstract: A method of forming a 3D crack-stop structure in, through, and wrapped around the edges of a substrate to prevent through-substrate cracks from propagating and breaking the substrate and the resulting device are provided. Embodiments include providing a substrate including one or more dies; forming a continuous first trench near an outer edge of the substrate; forming a continuous second trench parallel to and on an opposite side of the first trench from the outer edge; forming a continuous row of vias parallel to and on an opposite side of the second trench from the first trench, forming a continuous third trench parallel to and near an outer edge of each of the dies; forming a protective layer wrapping around the outer edge of the substrate and over and filling the trenches and vias; and patterning active areas of the substrate between the vias and the third trench.

公开(公告)号：US10090255B2

公开(公告)日：2018-10-02

申请号：US15010868

申请日：2016-01-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brittany L. Hedrick ,  Vijay Sukumaran ,  Christopher L. Tessler ,  Richard F. Indyk ,  Sarah H. Knickerbocker

IPC: H05K1/11 ,  H05K1/18 ,  H05K3/00 ,  H01L23/00 ,  H01L21/78 ,  H01L23/498 ,  H01L21/48 ,  H05K1/03 ,  H01L23/15

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to dicing channels used in the singulatation process of interposers and methods of manufacture. The structure includes: one or more redistribution layers; a glass interposer connected to the one or more redistribution layers; a channel formed through the one or more redistribution layers and the glass interposer core, forming a dicing channel; and polymer material conformally filling the channel.

公开(公告)号：US20170221837A1

公开(公告)日：2017-08-03

申请号：US15010868

申请日：2016-01-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brittany L. Hedrick ,  Vijay Sukumaran ,  Christopher L. Tessler ,  Richard F. Indyk ,  Sarah H. Knickerbocker

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/498 ,  H05K3/00 ,  H01L21/56 ,  H05K1/03 ,  H05K1/11 ,  H05K1/02 ,  H01L21/78 ,  H01L21/48

CPC classification number: H01L23/562 ,  H01L21/486 ,  H01L21/78 ,  H01L23/15 ,  H01L23/49811 ,  H01L23/49827 ,  H01L2224/11 ,  H01L2224/73204 ,  H05K1/0306 ,  H05K3/0026 ,  H05K3/0052 ,  H05K3/0094 ,  H05K2201/0959 ,  H05K2201/10378

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to dicing channels used in the singulatation process of interposers and methods of manufacture. The structure includes: one or more redistribution layers; a glass interposer connected to the one or more redistribution layers; a channel formed through the one or more redistribution layers and the glass interposer core, forming a dicing channel; and polymer material conformally filling the channel.