公开(公告)号：US09236312B2

公开(公告)日：2016-01-12

申请号：US14053088

申请日：2013-10-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hong Yu ,  Hyucksoo Yang ,  Richard J. Carter

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/28 ,  H01L27/092 ,  H01L27/12 ,  H01L21/84 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/762 ,  H01L27/088

CPC classification number: H01L27/0924 ,  H01L21/76224 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0886 ,  H01L29/161 ,  H01L29/167 ,  H01L29/41783 ,  H01L29/66795

Abstract: Approaches for forming an oxide cap to protect a semiconductor device (e.g., a fin field effect transistor device (FinFET)) are provided. Specifically, approaches are provided for forming an oxide cap over a subset (e.g., SiP regions) of raised source drain (RSD) structures on the set of fins of the FinFET device to mitigate damage during subsequent processing. The oxide spacer is deposited before the removal of a nitride capping layer from the FinFET device (e.g., by a hot phosphorus wash). The oxide cap on top of the RSD structures will be preserved throughout the removal of the nitride capping layer to provide hardmask protection during this process.

Abstract translation: 提供了用于形成氧化物盖以保护半导体器件（例如，鳍式场效应晶体管器件（FinFET））的方法。 具体地，提供了用于在FinFET装置的鳍片组上的凸起的源极漏极（RSD）结构的子集（例如，SiP区域）上形成氧化物盖的方法，以减轻随后的处理期间的损伤。 在从FinFET器件去除氮化物覆盖层（例如通过热磷洗涤）之前，沉积氧化物间隔物。 在整个去除氮化物覆盖层的过程中，RSD结构顶部的氧化物盖将被保留，以提供硬掩模保护。

公开(公告)号：US09356147B2

公开(公告)日：2016-05-31

申请号：US13918622

申请日：2013-06-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hong Yu ,  Hyucksoo Yang ,  Puneet Khanna

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/823431 ,  H01L29/66795

Abstract: A method for etching FinFET spacers by inserting a Si recess step directly after the traditional spacer ME step and the resulting device are provided. Embodiments include forming a gate on a substrate having a silicon fin, the gate having a nitride cap on an upper surface thereof and an oxide cap on an upper surface of the nitride cap; forming a dielectric layer over the silicon fin and the gate; removing the dielectric layer from an upper surface of the oxide cap and an upper surface of the silicon fin; recessing the silicon fin; and removing the dielectric layer from side surfaces of the silicon fin and the remaining silicon fin.

Abstract translation: 通过在传统的间隔物ME步骤之后直接插入Si凹陷步骤和所得到的器件来蚀刻FinFET间隔物的方法。 实施例包括在具有硅翅片的基板上形成栅极，栅极在其上表面具有氮化物盖，在氮化物盖的上表面上具有氧化物盖; 在所述硅片和所述栅极上形成介电层; 从所述氧化物盖的上表面和所述硅片的上表面去除所述电介质层; 凹陷硅片; 并且从硅片和剩余的硅片的侧表面去除电介质层。

公开(公告)号：US20160211373A1

公开(公告)日：2016-07-21

申请号：US15080369

申请日：2016-03-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： HONG YU ,  Hyucksoo Yang ,  Huang Liu ,  Richard J. Carter

IPC: H01L29/78 ,  H01L29/161 ,  H01L29/66 ,  H01L29/24 ,  H01L29/267 ,  H01L21/8238 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/823814 ,  H01L21/823821 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/66795 ,  H01L21/8238 ,  H01L29/785

Abstract: Embodiments of the present invention provide improved methods for fabricating field effect transistors such as finFETs. Stressor regions are used to increase carrier mobility. However, subsequent processes such as deposition of flowable oxide and annealing can damage the stressor regions, diminishing the amount of stress that is induced. Embodiments of the present invention provide a protective layer of silicon or silicon oxide over the stressor regions prior to the flowable oxide deposition and anneal.

公开(公告)号：US09324841B2

公开(公告)日：2016-04-26

申请号：US14049848

申请日：2013-10-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hong Yu ,  Hyucksoo Yang ,  Huang Liu ,  Richard J. Carter

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/76 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L21/823814 ,  H01L21/823821 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/66795 ,  H01L21/8238 ,  H01L29/785

Abstract: Embodiments of the present invention provide improved methods for fabricating field effect transistors such as finFETs. Stressor regions are used to increase carrier mobility. However, subsequent processes such as deposition of flowable oxide and annealing can damage the stressor regions, diminishing the amount of stress that is induced. Embodiments of the present invention provide a protective layer of silicon or silicon oxide over the stressor regions prior to the flowable oxide deposition and anneal.

Abstract translation: 本发明的实施例提供了用于制造诸如finFET的场效应晶体管的改进方法。 应力区域用于增加载流子迁移率。 然而，诸如沉积可流动氧化物和退火的后续过程可能损害应力区域，减少了所引起的应力量。 本发明的实施例在可流动的氧化物沉积和退火之前在应力区域上提供硅或氧化硅的保护层。

公开(公告)号：US09024368B1

公开(公告)日：2015-05-05

申请号：US14079757

申请日：2013-11-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hong Yu ,  Hyucksoo Yang ,  Bingwu Liu ,  Puneet Khanna ,  Lun Zhao

IPC: H01L29/76 ,  H01L21/336 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/7848 ,  H01L29/66795 ,  H01L29/785

Abstract: Fin-type transistor fabrication methods and structures are provided having extended embedded stress elements. The methods include, for example: providing a gate structure extending over a fin extending above a substrate; using isotropic etching and anisotropic etching to form an extended cavity within the fin, where the extended cavity in part undercuts the gate structure, and where the using of the isotropic etching and the anisotropic etching deepens the extended cavity into the fin below the undercut gate structure; and forming an embedded stress element at least partially within the extended cavity, including below the gate structure.

Abstract translation: 鳍型晶体管制造方法和结构被提供具有延伸的嵌入应力元件。 所述方法包括例如：提供在衬底上延伸的翅片上延伸的栅极结构; 使用各向同性蚀刻和各向异性蚀刻在翅片内形成延伸空腔，其中延伸空腔部分地削弱了栅极结构，并且其中使用各向同性蚀刻和各向异性蚀刻将扩展腔加深到底切栅结构下方的翅片 ; 以及至少部分地在所述延伸空腔内形成嵌入的应力元件，包括在所述栅极结构下方。

公开(公告)号：US20150099340A1

公开(公告)日：2015-04-09

申请号：US14049848

申请日：2013-10-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hong Yu ,  Hyucksoo Yang ,  Huang Liu ,  Richard J. Carter

IPC: H01L29/66

CPC classification number: H01L29/7848 ,  H01L21/823814 ,  H01L21/823821 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/66795 ,  H01L21/8238 ,  H01L29/785

Abstract: Embodiments of the present invention provide improved methods for fabricating field effect transistors such as finFETs. Stressor regions are used to increase carrier mobility. However, subsequent processes such as deposition of flowable oxide and annealing can damage the stressor regions, diminishing the amount of stress that is induced. Embodiments of the present invention provide a protective layer of silicon or silicon oxide over the stressor regions prior to the flowable oxide deposition and anneal.

Abstract translation: 本发明的实施例提供了用于制造诸如finFET的场效应晶体管的改进方法。 应力区域用于增加载流子迁移率。 然而，诸如沉积可流动氧化物和退火的后续过程可能损害应力区域，减少了所引起的应力量。 本发明的实施例在可流动的氧化物沉积和退火之前在应力区域上提供硅或氧化硅的保护层。