公开(公告)号：US20160315084A1

公开(公告)日：2016-10-27

申请号：US14691960

申请日：2015-04-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xusheng WU ,  HongLiang SHEN ,  Changyong XIAO ,  Jianhua YIN ,  Jie CHEN ,  Jin Ping LIU ,  Hong YU ,  Zhenyu HU ,  Lan YANG ,  Wanxun HE

IPC: H01L27/092 ,  H01L29/10 ,  H01L21/8238

CPC classification number: H01L27/0924 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/82385 ,  H01L29/1033

Abstract: There is set forth herein in one embodiment a semiconductor structure having a first region and a second region. The first region can include fins of a first fin height and the second region can include fins of a second fin height.

Abstract translation: 这里在一个实施例中阐述了具有第一区域和第二区域的半导体结构。 第一区域可以包括第一翅片高度的翅片，并且第二区域可以包括具有第二翅片高度的翅片。

公开(公告)号：US20180158821A1

公开(公告)日：2018-06-07

申请号：US15370555

申请日：2016-12-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Changyong XIAO ,  Xusheng WU ,  Min-hwa CHI ,  Jie CHEN

IPC: H01L27/092 ,  H01L21/8238

CPC classification number: H01L27/092 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to gate structures with low resistance and methods of manufacture. The structure includes: an nFET device formed in a first cavity having a first volume which is filled with conductive material; and a pFET device forming in a second cavity having a second volume greater than the first volume. The second volume being filled with the conductive material.