公开(公告)号：US20200294868A1

公开(公告)日：2020-09-17

申请号：US16298309

申请日：2019-03-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hongliang SHEN ,  Guoxiang NING ,  Erfeng DING ,  Dongsuk PARK ,  Xiaoxiao ZHANG ,  Lan YANG

IPC: H01L21/66 ,  H01L27/02 ,  H01L27/088 ,  G06F17/50

Abstract: The present disclosure relates to a method which includes generating a device layout of an eBeam based overlay (EBO OVL) structure with a minimum design rule, simulating a worst case process margin for the generated device layout of the EBO OVL structure, enabling a plurality of devices for the simulated worst case process margin for the generated device layout of the EBO OVL structure, and breaking a plurality of design rules for the enabled plurality of devices of the EBO OVL structure to generate an OVL measurement layout of the EBO OVL structure.

公开(公告)号：US20160315084A1

公开(公告)日：2016-10-27

申请号：US14691960

申请日：2015-04-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xusheng WU ,  HongLiang SHEN ,  Changyong XIAO ,  Jianhua YIN ,  Jie CHEN ,  Jin Ping LIU ,  Hong YU ,  Zhenyu HU ,  Lan YANG ,  Wanxun HE

IPC: H01L27/092 ,  H01L29/10 ,  H01L21/8238

CPC classification number: H01L27/0924 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/82385 ,  H01L29/1033

Abstract: There is set forth herein in one embodiment a semiconductor structure having a first region and a second region. The first region can include fins of a first fin height and the second region can include fins of a second fin height.

Abstract translation: 这里在一个实施例中阐述了具有第一区域和第二区域的半导体结构。 第一区域可以包括第一翅片高度的翅片，并且第二区域可以包括具有第二翅片高度的翅片。