公开(公告)号：US10818763B1

公开(公告)日：2020-10-27

申请号：US16405368

申请日：2019-05-07

申请人： GLOBALFOUNDRIES Inc.

发明人： Anthony K. Stamper ,  Steven M. Shank ,  Michel J. Abou-Khalil ,  Siva P. Adusumilli

IPC分类号： H01L29/423 ,  H01L21/8234 ,  H01L29/45 ,  H01L27/088

摘要： Structures for a field-effect transistor and methods of forming a field-effect transistor. A first gate electrode has a first plurality of segments arranged in series to define a first non-rectilinear chain. A second gate electrode is arranged adjacent to the first gate electrode. The second gate electrode includes a second plurality of segments arranged in series to define a second non-rectilinear chain. A source/drain region is laterally arranged between the first gate electrode and the second gate electrode.

公开(公告)号：US20180204926A1

公开(公告)日：2018-07-19

申请号：US15921715

申请日：2018-03-15

申请人： GLOBALFOUNDRIES INC.

发明人： Michel J. Abou-Khalil ,  Alan Bernard Botula ,  Blaine Jeffrey Gross ,  Mark David Jaffe ,  Alvin Joseph ,  Richard A. Phelps ,  Steven M. Shank ,  James Albert Slinkman

IPC分类号： H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/42376 ,  H01L21/28017 ,  H01L21/28158 ,  H01L29/0649 ,  H01L29/42368 ,  H01L29/66568 ,  H01L29/66575 ,  H01L29/78

摘要： Methods form transistor structures that include, among other components, a substrate having an active region bordered by an isolation region, a gate insulator on the substrate, and a gate conductor on the gate insulator. First and second sections of the gate conductor are within the active region of the substrate, while a third section is in the isolation region of the substrate. The second section of the gate conductor tapers from the width of the first section to the width of the wider third section. The first section and the second section of the gate conductor have undercut regions where the corner of the gate conductor contacts the substrate. The third section of the gate conductor lacks the undercut regions. The gate insulator is relatively thicker in the undercut regions and is relatively thinner where the corner of the gate conductor lacks the undercut regions in the isolation region.

公开(公告)号：US09978849B2

公开(公告)日：2018-05-22

申请号：US14982459

申请日：2015-12-29

申请人： GLOBALFOUNDRIES INC.

发明人： Michel J. Abou-Khalil ,  Alan Bernard Botula ,  Blaine Jeffrey Gross ,  Mark David Jaffe ,  Alvin Joseph ,  Richard A. Phelps ,  Steven M. Shank ,  James Albert Slinkman

IPC分类号： H01L29/423 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28

CPC分类号： H01L29/42376 ,  H01L21/28017 ,  H01L21/28158 ,  H01L29/0649 ,  H01L29/42368 ,  H01L29/66568 ,  H01L29/66575 ,  H01L29/78

摘要： Methods form transistor structures that include, among other components, a substrate having an active region bordered by an isolation region, a gate insulator on the substrate, and a gate conductor on the gate insulator. First and second sections of the gate conductor are within the active region of the substrate, while a third section is in the isolation region of the substrate. The second section of the gate conductor tapers from the width of the first section to the width of the wider third section. The first section and the second section of the gate conductor have undercut regions where the corner of the gate conductor contacts the substrate. The third section of the gate conductor lacks the undercut regions. The gate insulator is relatively thicker in the undercut regions and is relatively thinner where the corner of the gate conductor lacks the undercut regions in the isolation region.

公开(公告)号：US09716136B1

公开(公告)日：2017-07-25

申请号：US15071641

申请日：2016-03-16

申请人： GLOBALFOUNDRIES INC.

发明人： Michel J. Abou-Khalil ,  Steven M. Shank ,  Anthony K. Stamper

IPC分类号： H01L21/033 ,  H01L21/768 ,  H01L23/525 ,  H01L27/12 ,  H01L49/02

CPC分类号： H01L28/20

摘要： A method of forming an embedded polysilicon resistor body contact. According to the method, a transistor is formed in and above a crystalline active region that is positioned in a semiconductor layer of a multilayer semiconductor device. A resistor region is defined in single crystal semiconductor material of the semiconductor layer formed on a buried insulating layer. The resistor region is adjacent the transistor. An amorphized semiconductor material is formed in the resistor region. A barrier is formed in the amorphized semiconductor material. The barrier is between the transistor and an electrical body contact for the transistor. The amorphized semiconductor material is annealed, forming a polysilicon semiconductor. The barrier prevents the amorphized region from recrystallizing back to single crystal silicon.

公开(公告)号：US20210066118A1

公开(公告)日：2021-03-04

申请号：US16553737

申请日：2019-08-28

申请人： GLOBALFOUNDRIES Inc.

发明人： Michel J. Abou-Khalil ,  Aaron Vallett ,  Steven M. Shank ,  Bojidha Babu ,  John J. Ellis-Monaghan ,  Anthony K. Stamper

IPC分类号： H01L21/762 ,  H01L21/324 ,  H01L21/265 ,  H01L29/06

摘要： Structures including electrical isolation and methods associated with forming such structures. A semiconductor layer has a top surface, a polycrystalline region, and a single-crystal region between the polycrystalline region and the top surface. An isolation band is located beneath the single-crystal region. The isolation band contains a first concentration of an n-type dopant and a second concentration of a p-type dopant, and a net difference between the first concentration and the second concentration is within a range of about five percent to about fifteen percent.

公开(公告)号：US20180323066A1

公开(公告)日：2018-11-08

申请号：US15584121

申请日：2017-05-02

申请人： GLOBALFOUNDRIES Inc.

发明人： Michel J. Abou-Khalil ,  Steven M. Shank ,  Alvin J. Joseph ,  Michael J. Zierak

IPC分类号： H01L21/02 ,  H01L29/06 ,  H01L29/16 ,  H01L29/04 ,  H01L29/10 ,  H01L21/762 ,  H01L21/306

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/30604 ,  H01L21/76224 ,  H01L29/04 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/1095 ,  H01L29/16

摘要： Device structures for a field-effect transistor and methods of forming a device structure for a field-effect transistor. A trench isolation region is formed in a substrate, and surrounds a semiconductor body. An undercut cavity region is also formed in the substrate. The undercut cavity region extends laterally beneath the semiconductor body and defines a body pedestal as a section of the substrate that is arranged in vertical alignment with the semiconductor body.

公开(公告)号：US20170186845A1

公开(公告)日：2017-06-29

申请号：US14982459

申请日：2015-12-29

申请人： GLOBALFOUNDRIES INC.

发明人： Michel J. Abou-Khalil ,  Alan Bernard Botula ,  Blaine Jeffrey Gross ,  Mark David Jaffe ,  Alvin Joseph ,  Richard A. Phelps ,  Steven M. Shank ,  James Albert Slinkman

IPC分类号： H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/42376 ,  H01L21/28017 ,  H01L21/28158 ,  H01L29/0649 ,  H01L29/42368 ,  H01L29/66568 ,  H01L29/66575 ,  H01L29/78

摘要： Methods form transistor structures that include, among other components, a substrate having an active region bordered by an isolation region, a gate insulator on the substrate, and a gate conductor on the gate insulator. First and second sections of the gate conductor are within the active region of the substrate, while a third section is in the isolation region of the substrate. The second section of the gate conductor tapers from the width of the first section to the width of the wider third section. The first section and the second section of the gate conductor have undercut regions where the corner of the gate conductor contacts the substrate. The third section of the gate conductor lacks the undercut regions. The gate insulator is relatively thicker in the undercut regions and is relatively thinner where the corner of the gate conductor lacks the undercut regions in the isolation region.