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公开(公告)号:US09299665B2
公开(公告)日:2016-03-29
申请号:US14519235
申请日:2014-10-21
Applicant: GLOBALFOUNDRIES INC.
Inventor: Paul S. Andry , Cyril Cabral, Jr. , Kenneth P. Rodbell , Robert L. Wisnieff
IPC: H01L23/556 , H01L23/00 , H01L21/304 , H01L21/48
CPC classification number: H01L23/556 , H01L21/304 , H01L21/481 , H01L24/11 , H01L24/29 , H01L24/81 , H01L24/83 , H01L2224/16 , H01L2224/16113 , H01L2224/16225 , H01L2224/16227 , H01L2224/29111 , H01L2224/73204 , H01L2224/81801 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/2064 , H01L2924/3025 , H01L2224/13111 , H01L2924/00014
Abstract: A structure fabrication method. An integrated circuit that includes N chip electric pads is bonded to a top side of an interposing shield that includes N electric conductors. N is at least 2. The interposing shield includes a shield material that includes a first semiconductor material. A bottom side of the interposing shield is polished, which exposes the N electric conductors to a surrounding ambient. The bonding includes bonding the integrated circuit to the top side of the interposing shield such that the N chip electric pads are in electrical contact and direct physical contact with corresponding electrical pads of the N electric conductors. The shield material covers the N electric conductors in a manner that the N electric conductors are not exposed to the surrounding ambient. The polishing removes a sufficient amount of the shield material to expose the N electric conductors to the surrounding ambient.
Abstract translation: 一种结构制造方法。 包括N个芯片电焊盘的集成电路被结合到包括N个电导体的插入屏蔽的顶侧。 N为至少2.插入屏蔽包括包括第一半导体材料的屏蔽材料。 中间屏蔽的底面被抛光,将N根电导体暴露在周围环境中。 接合包括将集成电路接合到中间屏蔽的顶侧,使得N个芯片电极焊盘与N个电导体的相应电焊盘电接触并直接物理接触。 屏蔽材料以N个电导体不暴露于周围环境的方式覆盖N个电导体。 抛光去除了足够量的屏蔽材料,以将N个电导体暴露于周围环境。